RBE2VA20A

Data Sheet Schottky Barrier Diode RBE2VA20A lApplications Rectifying Small Power lDimensions (Unit : mm) 0.17±0.1 　　 0.05 1 .3±0.05 lLand size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2 TUMD2 lStructure 0.8±0.05 ROHM : TUMD2 dot (year week factory) 0.6±0.2 　　　 0.1 lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 3.5±0.05 1.75±0.1 φ 1.55±0.1 　　　　　 0 0.25±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ 1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08 lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 20 2 5 125 -40 to +125 Unit V V A A C C lElectrical characteristics (Tj=25C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR Min. - Typ. - Max. 0.39 0.46 700 Unit V V μA IF=1A IF=2A VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 0.8 0.5 lFeatures 1)Small Power Mold Type (TUMD2) 2)High reliability 2.0 RBE2VA20A 　 Data Sheet 10 100 Ta=125°C Ta=125°C REVERSE CURRENT:IR(mA) 10 Ta=75°C 1 Ta=25°C 0.1 Ta=-25°C 0.01 Ta=-25°C FORWARD CURRENT:IF(A) 1 Ta=75°C 0.1 Ta=25°C 0.01 0.001 0 100 200 300 400 500 0.001 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1000 f=1MHz 450 440 FORWARD VOLTAGE:VF(mV) 430 420 410 400 390 380 370 360 AVE:397.8mV Ta=25°C IF=2A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 VF DISPERSION MAP 500 450 REVERSE CURRENT:IR(μA) 400 350 300 250 200 150 100 50 0 IR DISPERSION MAP AVE:254.3μA Ta=25°C VR=20V n=30pcs 250 Ta=25°C f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 240 230 220 AVE:211pF 210 200 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RBE2VA20A 　 Data Sheet 50 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 40 IFSM 8.3ms REVERSE RECOVERY TIME:trr(ns) 1cyc 25 20 30 AVE:25A 15 AVE:9.2ns 10 20 10 5 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 50 45 PEAK SURGE FORWARD CURRENT:IFSM(A) 40 8.3ms 35 30 25 20 15 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 1cyc IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 50 45 IFSM 40 35 30 25 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 t 10000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 2 1000 Rth(j-a) 100 Rth(j-c) 10 FORWARD POWER DISSIPATION:Pf(W) 1.5 D=1/2 1 Sin(θ＝180) 0.5 DC 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.5 TIME:t(s) Rth-t CHARACTERISTICS 1 1.5 2 2.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3 3.5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RBE2VA20A 　 Data Sheet 3 5 4.5 0A 0V t T Io D=t/T VR=10V Tj=125°C VR 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 4 3.5 3 2.5 D=1/2 2 1.5 1 0.5 Sin(θ＝180) 0 25 50 DC 2 1.5 1 Sin(θ＝180) 0.5 D=1/2 DC 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 5 4.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) Sin(θ＝180) D=1/2 DC T Io 0A 0V t 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) VR D=t/T VR=10V Tj=125°C 25 20 15 10 AVE:4.4kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A