RCD075N20

Data Sheet 10V Drive Nch MOSFET RCD075N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RCD075N20 Type Taping TL 2500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) 2.5 (3) 0.75 Limits 200 30 7.5 30 7.5 30 3.75 4.13 20 150 55 to 150 Unit V V A A A A A mJ W C C 1 BODY DIODE VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP *3 *1 *3 *1 IAS *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum channel temperature allowed. Symbol Rth (ch-c)* Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.9 1/5 2011.10 - Rev.A 1.5 9.5 RCD075N20  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 200 3.25 1.5 Typ. 250 3.0 755 55 25 20 22 24 12 15 6 6 Max. 100 10 5.25 325 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=200V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=3.75A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=3.75A VDS=25V VGS=0V f=1MHz VDD 100V, ID=3.75A VGS=10V RL=26.67 RG=10 VDD 100V, ID=7.5A VGS=10V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=7.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A RCD075N20 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 3 Ta=25°C pulsed 2.5 VGS=10.0V VGS=8.0V VGS=7.0V Drain Current : ID [A] 2 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 8 VGS=10.0V VGS=8.0V 6 Ta=25°C pulsed Drain Current : ID [A] 1.5 VGS=6.5V 1 VGS=6.0V 0.5 VGS=5.5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 4 VGS=7.0V 2 VGS=6.5V VGS=6.0V VGS=5.5V 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 10 VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 8 Gate Threshold Voltage : VGS(th) [V] 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 1 Drain Currnt : ID [A] 6 0.1 4 0.01 2 0.001 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 VGS=10V pulsed Static Drain-Source On-State Resistance : RDS(on) [mΩ] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1000 VGS=10V pulsed 800 Static Drain-Source On-State Resistance : RDS(on) [mΩ] 600 ID=7.5A 400 ID=3.75A 200 100 10 0.1 1 Drain Current : ID [A] 10 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A RCD075N20 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance Yfs [S] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Source Current : IS [A] 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.01 0.1 1 10 0.0 0.5 1.0 1.5 Drain Current : ID [A] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 Ta=25°C pulsed 800 ID=7.5A 600 ID=3.75A Switching Time : t [ns] 1000 10000 Fig.10 Switching Characteristics Static Drain-Source On-State Resistance RDS(on) [mΩ] tf td(off) VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed 100 td(on) 10 400 200 tr 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics 20 Ta=25°C VDD=100V ID=7.5A Pulsed Gate-Source Voltage : VGS [V] 15 Capacitance : C [pF] 1000 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss 100 10 Coss 5 10 Crss 0 0 5 10 15 20 25 30 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A RCD075N20  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A