Data Sheet
10V Drive Nch MOSFET
RCD075N20
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
CPT3
6.5
5.1
Package
Code
Basic ordering unit (pieces)
RCD075N20
2.3
Taping
TL
2500
VDSS
VGSS
ID
IDP
IS
*3
Pulsed
ISP
*1
R
Continuous
Pulsed
Continuous
*1
*3
Power dissipation
IAS *2
EAS *2
PD *4
Channel temperature
Range of storage temperature
Tch
Tstg
Avalanche current
Avalanche energy
ot
(3)
9.5
2.5
0.5
1.0
Inner circuit
Gate-source voltage
N
(2)
0.8Min.
(1)
Drain-source voltage
Source current
(Body Diode)
0.65
0.9 2.3
Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain current
1.5
1.5
0.9
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0.75
Packaging specifications
Type
2.3
0.5
5.5
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Application
Switching
or
(SC-63)
∗1
(1) Gate
(2) Drain
(3) Source
Limits
Unit
200
30
V
V
7.5
30
7.5
A
A
A
30
A
3.75
4.13
A
mJ
52
W
150
55 to 150
C
C
Limits
2.36
Unit
C / W
(1)
(2)
(3)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 L
500H, VDD=50V, RG=25, T ch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (j-c) *
* T C=25°C
* Limited only by maximum channel temperature allowed.
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© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.02 - Rev.B
Data Sheet
RCD075N20
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
-
-
100
nA
VGS=30V, VDS=0V
200
-
-
V
ID=1mA, VGS=0V
IGSS
Drain-source breakdown voltage V(BR)DSS
Conditions
IDSS
-
-
10
A
VDS=200V, VGS=0V
VGS (th)
3.25
-
5.25
V
VDS=10V, ID=1mA
RDS (on)*
-
250
325
l Yfs l *
1.5
3.0
-
S
VDS=10V, ID=3.75A
Input capacitance
Ciss
-
755
-
pF
VDS=25V
Output capacitance
Coss
-
55
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
25
-
pF
f=1MHz
Turn-on delay time
td(on) *
tr *
-
20
-
ns
VDD 100V, ID=3.75A
-
22
-
ns
VGS=10V
td(off) *
tf *
-
24
-
ns
RL=26.67
-
12
-
ns
RG=10
Qg *
Qgs *
Qgd *
-
15
-
nC
VDD 100V, ID=7.5A
-
6
6
-
nC
nC
VGS=10V
Min.
Typ.
Max.
-
-
1.5
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Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
m ID=3.75A, VGS=10V
or
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Unit
Conditions
V
Is=7.5A, VGS=0V
N
ot
R
*Pulsed
Symbol
VSD *
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© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.02 - Rev.B
Data Sheet
RCD075N20
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
3
8
Ta=25°C
pulsed
VGS=10.0V
VGS=10.0V
VGS=7.0V
6
1.5
VGS=6.5V
1
or
Drain Current : ID [A]
2
VGS=7.0V
4
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Drain Current : ID [A]
Ta=25°C
pulsed
VGS=8.0V
VGS=8.0V
2.5
2
VGS=6.0V
0.5
VGS=6.0V
VGS=5.5V
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
6
8
10
Fig.4 Gate Threshold Voltage vs. Channel Temperature
10
VDS=10V
pulsed
VDS=10V
ID=1mA
pulsed
8
Gate Threshold Voltage : VGS(th) [V]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Drain Currnt : ID [A]
4
Drain-Source Voltage : VDS [V]
10
0.1
0.01
6
4
2
0
0.001
0
1
2
3
4
5
6
7
8
9
-50
10
-25
0
25
50
75
100
125
150
Channel Temperature : Tch [℃]
Gate-Source Voltage : VGS [V]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1000
VGS=10V
pulsed
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
: RDS(on) [mΩ]
ot
10000
Static Drain-Source On-State Resistance
: RDS(on) [mΩ]
VGS=5.5V
0
0
N
VGS=6.5V
1000
100
10
800
600
ID=7.5A
400
ID=3.75A
200
0
0.1
1
10
-50
Drain Current : ID [A]
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© 2016 ROHM Co., Ltd. All rights reserved.
-25
0
25
50
75
100
125
150
Channel Temperature : Tch [℃]
3/5
2016.02 - Rev.B
Data Sheet
RCD075N20
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Source Current vs. Source-Drain Voltage
10
10
VGS=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
or
Source Current : IS [A]
1
0.1
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Forward Transfer Admittance
Yfs [S]
VDS=10V
pulsed
0.01
0.01
0.01
0.1
1
10
0.0
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.10 Switching Characteristics
VDD≒100V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
800
1000
Switching Time : t [ns]
ID=7.5A
ID=3.75A
600
400
tf
td(off)
100
td(on)
10
tr
200
1
0
2
4
6
8
10
12
14
16
18
0.01
20
0.1
Gate-Source Voltage : VGS [V]
1
10
Drain Current : ID [A]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Fig.11 Dynamic Input Characteristics
10000
20
Ta=25°C
f=1MHz
VGS=0V
ot
Ta=25°C
VDD=100V
ID=7.5A
Pulsed
1000
15
Capacitance : C [pF]
Gate-Source Voltage : VGS [V]
1.5
10000
Ta=25°C
pulsed
0
N
1.0
Source-Drain Voltage : VSD [V]
1000
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
0.5
Drain Current : ID [A]
10
Ciss
100
Coss
10
5
Crss
1
0
0
5
10
15
20
25
0.01
30
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0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
Total Gate Charge : Qg [nC]
4/5
2016.02 - Rev.B
Data Sheet
RCD075N20
Measurement circuits
Pulse width
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
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Fig.1-2 Switching Waveforms
or
VGS
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
VGS
IAS
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
L IAS
2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
N
ot
R
Fig.3-1 Avalanche Measurement Circuit
1
2
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Datasheet
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7.
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8.
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ot
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2.
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(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
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1.
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performance and reliability.
2.
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please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
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Datasheet
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Datasheet
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3.
Notice – WE
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2015 ROHM Co., Ltd. All rights reserved.
Rev.001