RDS035L03

RDS035L03 Transistors Switching (30V, 3.5A) RDS035L03 Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. Application Switching Structure Silicon N-channel MOS FET External dimensions (Units : mm) Max.1.75 + 5.0− 0.2 (5) (4) (8) + 3.9− 0.15 + 6.0− 0.3 + 0.5− 0.1 (1) 0.15 + 1.5− 0.1 ROHM : SOP8 Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) (1) (2) (3) (4) (1) ∗ (2) (3) ∗ ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (4) (6) (7) (8) Tr1 Source Tr1 Gate Tr2 Source Tr2 Gate Tr2 Drain Tr2 Drain Tr1 Drain Tr1 Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 3.5 14 3.5 14 1.3 5.2 2 150 −55∼+150 Unit V V A A A A A A W ˚C ˚C Total Power Dissipation(Tc=25˚C) Channel Temperature Storage Temperature ∗ Pw≤10ms, Duty cycle≤1% + 0.2− 0.1 Each lead has same dimensions 1.27 + 0.4− 0.1 0.1 RDS035L03 Transistors Thermal resistance (Ta=25°C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ˚C / W Electrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Symbol IGSS Min. − 30 − 1.0 − RDS (on) l Yfs l∗ Ciss Coss Crss td (on)∗ tr∗ td (off)∗ tf∗ Q g∗ Qgs∗ Qgd∗ − − 2.5 − − − − − − − − − − Typ. − − − − 62 105 132 − 180 95 38 6 12 20 6 6.5 1.2 1.8 Max. ±10 − 10 2.5 80 134 172 − − − − − − − − − − − S pF pF pF ns ns ns ns nC nC nC mΩ Unit µA V µA V Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V ID=3.5A, VGS=4.5V ID=3.5A, VGS=4V ID=3.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2A, VDD 15V VGS=10V RL=7.5Ω RGS=10Ω VDD=15V VGS=10V ID=3.5A Drain-Source Breakdown Voltage V (BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IDSS VGS (th) ∗ Pulsed Body diode characteristics (Source-Drain Characteristics) (Ta=25°C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD∗ trr∗ Qrr∗ Min. − − − Typ. − 26 24 Max. 1.5 − − Unit V ns nC Test Conditions Is=3.5A, VGS=0V IDR=3.5A, VGS=0V di/dt=50A/µs ∗ Pulsed RDS035L03 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 10 1 Ta=125˚C 75˚C 25˚C −25˚C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) REVERSE DREIN CURRENT : IDR (A) VDS=0V Pulsed VDS=10V Pulsed 1 1 Ta=−25˚C 25˚C 75˚C 125˚C 0.1 Ta=125˚C 75˚C 25˚C −25˚C 0.01 0.1 0.1 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 0.001 0.1 VGS=4.5V Pulsed 1 DRAIN CURRENT : I D (A) 10 SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : I D (A) Fig.1 Reverse Drein Current vs. Source - Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 0.1 VGS=10V 0.09 Pulsed 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 −50 −25 0 25 50 75 100 125 150 0.6 0.5 0.4 ID =3.5A Ta=25˚C Pulsed 0.1 0.01 Ta=125˚C 75˚C 25˚C −25˚C 0.3 0.2 0.1 0 0 0.001 0.1 VGS=10V Pulsed 1 10 100 DRAIN CURRENT : I D (A) 5 10 15 20 CHANNEL TEMPERATURE : Tch (˚C) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS (th) (V) 4 DRAIN-SOURCE VOLTAGE : VDS (V) 3 30 24V VDS 20 15V 10 10V 12 24V 15V 10V 10 VGS 8 6 4 Ta=25˚C 2 ID=3.5A Pulsed 0 1 2 3 4 5 6 7 Ciss 100 Coss 2 1 Crss 0 −50 −25 0 25 50 75 100 125 150 10 0.1 1 10 100 0 0 CHANNEL TEMPERATURE : Tch (˚C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed CAPACITANCE : C (pF) 1000 Ta=25˚C f=1MHz VGS=0V 40 14 RDS035L03 Transistors 10000 10 SWITCHING TIME : t (ns) 1000 tf td (off) DRAIN CURRENT : ID (A) Ta=25˚C VDD 15V VGS=10V RG=10Ω Pulsed 10V 8.0V 6.0V 5.0V Ta=25˚C Pulsed 4.0V 5 3.5V 100 tr 10 td (on) 3.0V VGS=2.5V 0 0 1 0.01 0.1 1 10 1 2 3 4 5 DRAIN CURRENT : I D (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25˚C θth (ch-c) (t)=r (t) θth (ch-c) θth (ch-c)=6.25˚C / W PW D=PW T 0.01 0.001 10µ 100µ T 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width