RGCL60TK60D
Data Sheet
650V
600V 30A Field Stop Trench IGBT
lOutline
VCES
600V
IC(100°C)
18A
VCE(sat) (Typ.)
1.4V@IC=30A
PD
54W
lFeatures
TO-3PFM
(1)(2)(3)
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
(2) Collector
(3) Emitter
2) Soft Switching
*1
3) Built in Very Fast & Soft Recovery FRD
(1)
(RFN - Series)
*1 Built in FRD
(3)
4) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
lApplications
Packaging
Partial Switching PFC
Reel Size (mm)
-
Tape Width (mm)
-
Discharge Circuit
Tube
Type
Brake for Inverter
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGCL60TK60D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
600
V
Gate - Emitter Voltage
VGES
30
V
TC = 25°C
IC
30
A
TC = 100°C
IC
18
A
ICP*1
120
A
TC = 25°C
IF
26
A
TC = 100°C
IF
15
A
IFP*1
100
A
TC = 25°C
PD
54
W
TC = 100°C
PD
27
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
2.77
°C/W
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
3.93
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
BVCES
Conditions
IC = 10μA, VGE = 0V
Unit
Min.
Typ.
Max.
600
-
-
V
Collector Cut - off Current
ICES
VCE = 600V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
200
nA
VGE(th)
VCE = 5V, IC = 18.9mA
4.5
5.5
6.5
V
Tj = 25°C
-
1.4
1.8
V
Tj = 175°C
-
1.6
-
Gate - Emitter Threshold
Voltage
IC = 30A, VGE = 15V
Collector - Emitter Saturation
Voltage
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© 2016 ROHM Co., Ltd. All rights reserved.
VCE(sat)
2/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
1600
-
Output Capacitance
Coes
VGE = 0V
-
38
-
Reverse Transfer Capacitance
Cres
f = 1MHz
-
29
-
Total Gate Charge
Qg
VCE = 300V
-
68
-
Gate - Emitter Charge
Qge
IC = 30A
-
13
-
Gate - Collector Charge
Qgc
VGE = 15V
-
27
-
Turn - on Delay Time
td(on)
IC = 30A, VCC = 400V
-
44
-
tr
VGE = 15V, RG = 10Ω
-
27
-
Tj = 25°C
-
186
-
Inductive Load
-
178
-
Rise Time
pF
nC
ns
Turn - off Delay Time
Fall Time
td(off)
tf
Turn - on Switching Loss
Eon
*Eon includes diode
-
0.77
-
Turn - off Switching Loss
Eoff
reverse recovery
-
1.11
-
Turn - on Delay Time
td(on)
IC = 30A, VCC = 400V
-
40
-
tr
VGE = 15V, RG = 10Ω
-
45
-
Tj = 175°C
-
207
-
Inductive Load
-
272
-
mJ
Rise Time
ns
Turn - off Delay Time
Fall Time
td(off)
tf
Turn - on Switching Loss
Eon
*Eon includes diode
-
0.97
-
Turn - off Switching Loss
Eoff
reverse recovery
-
1.54
-
mJ
IC = 120A, VCC = 480V
Reverse Bias Safe Operating Area
RBSOA VP = 600V, VGE = 15V
FULL SQUARE
-
RG = 60Ω, Tj = 175°C
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3/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Tj = 25°C
-
1.45
1.9
Tj = 175°C
-
1.25
-
-
58
-
ns
-
6.3
-
A
-
0.20
-
μC
IF = 20A
Diode Forward Voltage
VF
V
Diode Reverse Recovery Time
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
Diode Reverse Recovery Energy
Err
-
7.4
-
μJ
Diode Reverse Recovery Time
trr
-
256
-
ns
Diode Peak Reverse Recovery
Current
Irr
-
10.4
-
A
Diode Reverse Recovery
Charge
Qrr
-
1.35
-
μC
Diode Reverse Recovery Energy
Err
-
146.5
-
μJ
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© 2016 ROHM Co., Ltd. All rights reserved.
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
4/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
40
Collector Current : IC [A]
Power Dissipation : PD [W]
80
60
40
20
30
20
10
Tj≦175ºC
VGE≧15V
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
Case Temperature : TC [ºC]
Case Temperature : TC [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
160
1000
Collector Current : IC [A]
Collector Current : IC [A]
140
100
10µs
10
1
100µs
0.1
TC= 25ºC
Single Pulse
120
100
80
60
40
Tj≦175ºC
VGE=15V
20
0.01
0
1
10
100
1000
0
Collector To Emitter Voltage : VCE[V]
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200
400
600
800
Collector To Emitter Voltage : VCE[V]
5/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
120
120
Tj= 25ºC
100
VGE= 20V
VGE= 12V
VGE= 15V
80
Collector Current : IC [A]
Collector Current : IC [A]
100
Tj= 175ºC
VGE= 10V
60
VGE= 8V
40
20
VGE= 15V
80
VGE= 12V
VGE= 10V
60
40
VGE= 8V
20
0
0
0
1
2
3
4
5
0
Collector To Emitter Voltage : VCE[V]
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
60
4
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
VCE= 10V
50
Collector Current : IC [A]
VGE= 20V
40
30
20
Tj= 175ºC
Tj= 25ºC
10
0
0
2
4
6
8
10
12
3
IC= 60A
2
IC= 30A
1
IC= 15A
0
25
Gate To Emitter Voltage : VGE [V]
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VGE= 15V
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
6/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lElectrical Characteristic Curves
20
Tj= 25ºC
IC= 60A
15
IC= 30A
10
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
IC= 15A
5
0
5
10
15
20
Tj= 175ºC
15
IC= 60A
10
IC= 30A
IC= 15A
5
0
5
20
10
Gate To Emitter Voltage : VGE [V]
20
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
Fig.11 Typical Switching Time
vs. Collector Current
1000
1000
tf
Switching Time [ns]
Switching Time [ns]
15
td(off)
100
td(on)
tf
td(off)
100
tr
td(on)
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
tr
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
10
10
0
10
20
30
40
50
0
60
Collector Current : IC [A]
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10
20
30
40
50
Gate Resistance : RG [Ω]
7/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
1
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
10
Eoff
Eon
0.1
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
0.01
Eoff
1
Eon
0.1
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
0.01
0
10
20
30
40
50
60
0
10
Collector Current : IC [A]
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
Cies
1000
100
Coes
Cres
10
f=1MHz
VGE=0V
Tj=25ºC
1
0.01
Gate To Emitter Voltage : VGE [V]
10000
Capacitance [pF]
20
10
5
VCC=300V
IC=30A
Tj=25ºC
0
0.1
1
10
0
100
Collector To Emitter Voltage : VCE[V]
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© 2016 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
60
70
Gate Charge : Qg [nC]
8/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
400
Reverse Recovery Time : trr [ns]
Forward Current : IF [A]
80
60
40
20
Tj= 175ºC
Tj= 25ºC
VCC=400V
diF/dt=200A/µs
Inductive load
300
Tj= 175ºC
200
100
Tj= 25ºC
0
0
0
0.5
1
1.5
2
2.5
0
3
Forward Voltage : VF[V]
20
30
40
50
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
20
2.5
Reverse Recovery Charge : Qrr [µC]
Reverse Recovery Current : Irr [A]
10
15
Tj= 175ºC
10
5
VCC=400V
diF/dt=200A/µs
Inductive load
Tj= 25ºC
0
VCC=400V
diF/dt=200A/µs
Inductive load
2
Tj= 175ºC
1.5
1
0.5
Tj= 25ºC
0
0
10
20
30
40
50
0
Forward Current : IF [A]
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© 2016 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
Forward Current : IF [A]
9/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
0.1
D= 0.5
0.2
1
0.01 Single Pulse
0.1
PDM
0.02
t1
0.05
0.01
0.0001
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.001
0.01
0.1
1
10
100
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
0.1
0.2
1
D= 0.5
1
PDM
0.01 Single Pulse
0.1
0.02
t1
0.05
0.01
0.0001
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.001
0.01
0.1
1
10
100
Pulse Width : t1[s]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/11
2016.01 - Rev.A
Data Sheet
RGCL60TK60D
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
IC
Fig.23 Inductive Load Circuit
10%
td(on)
tr
ton
IF
td(off)
tf
toff
trr , Qrr
VCE
diF/dt
10%
Irr
Eon
Fig.25 Diode Reverce Recovery Waveform
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© 2016 ROHM Co., Ltd. All rights reserved.
11/11
Eoff
VCE(sat)
Fig.24 Inductive Load Waveform
2016.01 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
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R1102A