RGCL60TS60
Data Sheet
650V
600V 30A Field Stop Trench IGBT
lOutline
VCES
600V
IC(100°C)
30A
VCE(sat) (Typ.)
1.4V
PD
111W
TO-247N
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
(2) Collector
(3) Emitter
2) Soft Switching
3) Pb - free Lead Plating ; RoHS Compliant
(1)
(3)
lApplications
lPackaging Specifications
Partial Switching PFC
Packaging
Discharge Circuit
Reel Size (mm)
-
Tape Width (mm)
-
Brake for Inverter
Tube
Type
Basic Ordering Unit (pcs)
450
Taping Code
C11
Marking
RGCL60TS60
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
600
V
Gate - Emitter Voltage
VGES
30
V
TC = 25°C
IC
48
A
TC = 100°C
IC
30
A
ICP*1
120
A
TC = 25°C
PD
111
W
TC = 100°C
PD
55
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2015 ROHM Co., Ltd. All rights reserved.
1/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lThermal Resistance
Values
Parameter
Symbol
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Unit
Min.
Typ.
Max.
-
-
1.34
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
BVCES
Conditions
IC = 10μA, VGE = 0V
Unit
Min.
Typ.
Max.
600
-
-
V
Collector Cut - off Current
ICES
VCE = 600V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
200
nA
VGE(th)
VCE = 5V, IC = 18.9mA
4.5
5.5
6.5
V
Tj = 25°C
-
1.4
1.8
V
Tj = 175°C
-
1.6
-
Gate - Emitter Threshold
Voltage
IC = 30A, VGE = 15V
Collector - Emitter Saturation
Voltage
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© 2015 ROHM Co., Ltd. All rights reserved.
VCE(sat)
2/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
1600
-
Output Capacitance
Coes
VGE = 0V
-
38
-
Reverse Transfer Capacitance
Cres
f = 1MHz
-
29
-
Total Gate Charge
Qg
VCE = 300V
-
68
-
Gate - Emitter Charge
Qge
IC = 30A
-
13
-
Gate - Collector Charge
Qgc
VGE = 15V
-
27
-
Turn - on Delay Time
td(on)
IC = 30A, VCC = 400V
-
44
-
tr
VGE = 15V, RG = 10Ω
-
27
-
Tj = 25°C
-
186
-
Inductive Load
-
178
-
Rise Time
pF
nC
ns
Turn - off Delay Time
Fall Time
td(off)
tf
Turn - on Switching Loss
Eon
*Eon includes diode
-
0.77
-
Turn - off Switching Loss
Eoff
reverse recovery
-
1.11
-
Turn - on Delay Time
td(on)
IC = 30A, VCC = 400V
-
40
-
tr
VGE = 15V, RG = 10Ω
-
45
-
Tj = 175°C
-
207
-
Inductive Load
-
272
-
mJ
Rise Time
ns
Turn - off Delay Time
Fall Time
td(off)
tf
Turn - on Switching Loss
Eon
*Eon includes diode
-
0.97
-
Turn - off Switching Loss
Eoff
reverse recovery
-
1.54
-
mJ
IC = 120A, VCC = 480V
Reverse Bias Safe Operating Area
RBSOA VP = 600V, VGE = 15V
FULL SQUARE
-
RG = 60Ω, Tj = 175°C
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© 2015 ROHM Co., Ltd. All rights reserved.
3/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
140
60
50
Collector Current : IC [A]
Power Dissipation : PD [W]
120
100
80
60
40
20
0
40
30
20
10
Tj≦175ºC
VGE≧15V
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
160
1000
10µs
Collector Current : IC [A]
Collector Current : IC [A]
140
100
10
100µs
1
0.1
TC= 25ºC
Single Pulse
120
100
80
60
40
Tj≦175ºC
VGE=15V
20
0.01
0
1
10
100
1000
0
Collector To Emitter Voltage : VCE[V]
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200
400
600
800
Collector To Emitter Voltage : VCE[V]
4/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
120
120
Tj= 175ºC
Tj= 25ºC
VGE= 15V
80
VGE= 12V
VGE= 10V
60
VGE= 8V
40
VGE= 15V
VGE= 12V
80
VGE= 10V
60
40
VGE= 8V
20
20
0
0
0
1
2
3
4
0
5
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
60
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
VCE= 10V
50
Collector Current : IC [A]
VGE= 20V
100
VGE= 20V
Collector Current : IC [A]
Collector Current : IC [A]
100
40
30
20
Tj= 175ºC
10
Tj= 25ºC
0
0
2
4
6
8
10
3
IC= 60A
2
IC= 30A
IC= 15A
1
0
25
12
Gate To Emitter Voltage : VGE [V]
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VGE= 15V
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
5/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
20
Tj= 25ºC
IC= 60A
15
IC= 30A
10
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
IC= 15A
5
0
5
10
15
20
Tj= 175ºC
15
IC= 60A
10
IC= 30A
IC= 15A
5
0
5
20
10
Gate To Emitter Voltage : VGE [V]
20
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
Fig.11 Typical Switching Time
vs. Collector Current
1000
1000
Switching Time [ns]
tf
Switching Time [ns]
15
td(off)
100
td(on)
tf
td(off)
100
tr
td(on)
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
tr
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
10
10
0
10
20
30
40
50
60
0
Collector Current : IC [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
Gate Resistance : RG [Ω]
6/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
10
Eoff
1
Eon
0.1
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
Eoff
1
Eon
0.1
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
0.01
0.01
0
10
20
30
40
50
0
60
10
Collector Current : IC [A]
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
Cies
1000
100
Coes
Cres
10
f=1MHz
VGE=0V
Tj=25ºC
1
0.01
Gate To Emitter Voltage : VGE [V]
10000
Capacitance [pF]
20
10
5
VCC=300V
IC=30A
Tj=25ºC
0
0.1
1
10
0
100
Collector To Emitter Voltage : VCE[V]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
60
70
Gate Charge : Qg [nC]
7/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lElectrical Characteristic Curves
Fig.17 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
D= 0.5
0.1 0.2
1
0.1
Single Pulse
0.01
0.02
PDM
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.05
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
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© 2015 ROHM Co., Ltd. All rights reserved.
8/9
2015.09 - Rev.A
Data Sheet
RGCL60TS60
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
10%
VG
90%
IC
10%
Fig.18 Inductive Load Circuit
td(on)
tr
ton
td(off)
tf
toff
VCE
10%
Eon
Eoff
VCE(sat)
Fig.19 Inductive Load Waveform
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© 2015 ROHM Co., Ltd. All rights reserved.
9/9
2015.09 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A