RSL020P03FRATR

RSL020P03FRA RSL020P03 Transistors 4V Drive Pch MOSFET AEC-Q101 Qualified RSL020P03FRA RSL020P03 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications Package Type Code Quantity (pcs) zInner circuit (6) Taping (5) (4) TR 3000 ∗2 RSL020P03FRA RSL020P03 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±2 ±8 −0.8 −8 1 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 125 Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board 20190527-Rev.C 1/4 RSL020P03 RSL020P03FRA Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state RDS (on)∗ − resistance − Yfs ∗ 1.4 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Qg − Total gate charge Qgs − Gate-source charge Qgd − Gate-drain charge Typ. Max. − − − − 80 125 140 − 350 80 50 11 11 35 11 3.9 1.3 1.1 ±10 − −1 −2.5 120 190 210 − − − − − − − − − − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −2A, VGS= −10V ID=−1A, VGS= −4.5V ID= −1A, VGS= −4.0V VDS= −10V, ID= −1A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −1A VGS= −10V RL=15Ω RG =10Ω VDD −15V VGS= −5V ID= −2A RL=7.5Ω RG =10Ω Unit V Conditions IS= −0.8A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 20190527-Rev.C 2/4 RSL020P03FRA RSL020P03 Transistors zElectrical characteristics curves 100 Coss Crss 0.1 1 10 td (off) td (on) 10 tr 1 0.01 100 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.1 Typical Capacitance vs. Drain-Source Voltage VDS= −10V Pulsed 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3 2 1 0 0 100 10 Fig.7 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) 1 1.5 2 2.5 3 3.5 4 4.5 Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 Ta=25°C Pulsed ID= −2A 200 ID= −1A 100 2 4 6 8 1000 10 12 14 16 VGS= −4.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.1 0.5 TOTAL GATE CHARGE : Qg (nC) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : −ID (A) 4 1 1 DRAIN CURRENT : −ID (A) 10 Fig.8 Static Drain-Source On-State Resistance vs. Drain current ( ΙΙ ) VGS= 0V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 GATE-SOURCE VOLTAGE : −VGS (V) VGS= −10V Pulsed 1 5 DRAIN CURRENT : −ID (A) 300 0 0 6 10 400 Fig.4 Typical Transfer Characteristics 10 0.1 1 500 GATE-SOURCE VOLTAGE : −VGS (V) 1000 0.1 Ta=25°C VDD= −15V ID= −2A RG=10Ω Pulsed 7 0.5 1.0 1.5 2.0 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.6 Reverse Drain Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 0.01 tf 100 8 REVERSE DRAIN CURRENT : −IDR (A) Ciss Ta=25°C VDD= −15V VSG= −10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) 1000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1000 VGS= −4V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain current ( ΙΙΙ ) 20190527-Rev.C 3/4 RSL020P03FRA RSL020P03 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Transistors 1000 Ta=25°C Pulsed VGS= −4.0V −4.5V −10V 100 10 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) 20190527-Rev.C 4/4