RSQ045N03TR

RSQ045N03 Nch 30V 4.5A Power MOSFET Datasheet lOutline VDSS 30V RDS(on) (Max.) 38mW ID 4.5A PD 1.25W lFeatures (6) (5) TSMT6 SOT-457T (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant Drain Drain Gate Source Drain Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) lApplication DC/DC converters Type 180 Tape width (mm) Basic ordering unit (pcs) 8 3,000 Taping code TR Marking QL lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID *1 4.5 A ID,pulse *2 18 A VGSS 20 V PD *3 1.25 W PD *4 0.6 W Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.10 - Rev.B Data Sheet RSQ045N03 lThermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA *3 - - 100 °C/W RthJA *4 - - 208 °C/W lElectrical characteristics(Ta = 25°C) ,unless otherwise specified Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C Values Unit Min. Typ. Max. 30 - - V - 26 - mV/°C Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V - - 1 mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 1.0 - 2.5 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID=1mA referenced to 25°C - -2.8 - mV/°C VGS=10V, ID=4.5A - 27 38 VGS=4.5V, ID=4.5A - 36 51 VGS=4.0V, ID=4.5A - 40 56 VGS=10V, ID=4.5A, Tj=125°C - 50 70 f = 1MHz, open drain - 6 - W 3.5 7.0 - S Static drain - source on - state resistance Gate input resistannce Transconductance RDS(on) RG gfs *5 *5 VDS=10V, ID=4.5A mW *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 520 - Output capacitance Coss VDS = 10V - 150 - Reverse transfer capacitance Crss f = 1MHz - 95 - VDD ⋍ 15V, VGS = 10V - 12 - tr *5 ID = 2.25A - 19 - td(off) *5 RL = 6.67W - 41 - RG = 10W - 14 - Turn - on delay time Rise time Turn - off delay time td(on) *5 tf *5 Fall time Unit pF ns lGate Charge characteristics(Ta = 25°C) Parameter Total gate charge Symbol Qg *5 Gate - Source charge Qgs *5 Gate - Drain charge Qgd *5 Conditions Values Min. Typ. Max. VDD ⋍ 15V, ID=4.5A VGS = 5V - 6.8 9.5 VDD ⋍ 15V, ID=4.5A VGS = 10V - 13 - - 1.6 - - 2.3 - VDD ⋍ 15V, ID=4.5A VGS = 5V Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Values Unit Min. Typ. Max. Ta = 25°C - - 1 A VGS = 0V, Is = 1.0A - - 1.2 V 3/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 Operation in this area is limited by RDS(on) (VGS = 10V) 100 80 60 40 20 0 0 50 100 150 1 PW = 10ms DC Operation 0.1 0.01 200 PW = 1ms Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Ta=25ºC Single Pulse 1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 bottom Single 0.1 0.001 0.0001 Rth(ch-a)=100ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 100 1000 Ta=25ºC Single Pulse 0.01 10 Fig.4 Single Pulse Maximum Power dissipation 1 Peak Transient Power : P(W) 10 1 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) PW = 100ms 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristic curves Fig.6 Typical Output Characteristics(II) Fig.5 Typical Output Characteristics(I) 4 4 VGS= 10.0V 3.5 VGS= 4.0V Ta=25ºC Pulsed 3 Drain Current : ID [A] Drain Current : ID [A] 3 VGS= 2.8V 2.5 VGS= 2.5V 2 1.5 1 0.5 0 0.0 0.2 0.4 0.6 0.8 Ta=25ºC Pulsed VGS= 2.8V VGS= 2.5V 2.5 2 1.5 1 VGS= 2.0V 0.5 VGS= 2.0V 0 1.0 0 2 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage vs. Junction Temperature 60 VGS = 0V ID = 1mA Pulsed 40 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] VGS= 4.0V 3.5 20 0 -50 0 50 100 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Gate - Source Voltage : VGS [V] 5/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 10 VDS= 10V Pulsed VDS = 10V ID = 1mA Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 3 2 1 0 -50 0 50 100 1 0.1 0.01 150 Junction Temperature : Tj [°C] Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 1 10 Drain Current : ID [A] Fig.11 Drain CurrentDerating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Drain Current Dissipation : ID/ID max. (%) 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 60 Drain Current : ID [A] 50 40 30 20 VGS = 10V ID = 4.5A Pulsed 10 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Drain Current : ID [A] 7/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Capacitance : C [pF] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.20 Dynamic Input Characteristics Switching Time : t [ns] Gate - Source Voltage : VGS [V] Fig.19 Switching Characteristics Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Total Gate Charge : Qg [nC] 8/11 2012.10 - Rev.B Data Sheet RSQ045N03 lElectrical characteristic curves Source Current : IS [A] Fig.21 Source Current vs. Source Drain Voltage Source-Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/11 2012.10 - Rev.B Data Sheet RSQ045N03 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.10 - Rev.B Data Sheet RSQ045N03 lDimensions (Unit : mm) D A e TSMT6 c L1 Lp HE E Q b x S A A3 e1 l1 A1 y S A A2 e S b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 A2 A3 b c D E e HE L1 Lp Q x y DIM b2 e1 l1 MILIMETERS MIN MAX 1.00 0.00 0.10 0.75 0.95 0.25 0.35 0.50 0.10 0.26 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.05 0.25 0.20 0.10 INCHES MIN 0.000 0.030 MAX 0.039 0.004 0.037 0.010 0.014 0.004 0.110 0.059 0.020 0.010 0.118 0.071 0.037 0.102 0.012 0.016 0.002 - MILIMETERS MIN MAX 0.70 2.10 0.90 0.118 0.024 0.028 0.010 0.008 0.004 INCHES MIN - MAX 0.028 0.083 - 0.035 Dimension in mm / inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/11 2012.10 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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