RUE002N05TL

1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) EMT3 or (SC-75A) e N co ew m m D es en ig de ns d f Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RUE002N05 Type  Inner circuit Taping TL 3000  (3) ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage (2) Limits Unit 50 V 8 200 800 125 800 150 V mA mA mA mA mW Power dissipation VGSS ID IDP *1 IS ISP *1 PD *2 Channel temperature Range of storage temperature Tch Tstg 150 55 to +150 C C Symbol Rth (ch-a)* Limits 833 Unit C / W Drain current R Source current (Body Diode) Continuous Pulsed Continuous Pulsed (1) SOURCE (2) GATE (3) DRAIN (1) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE ot *1 Pw10s, Duty cycle1% N *2 Each terminal mounted on a recommended land.  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.06 - Rev.B RUE002N05 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Typ. Max. Unit Conditions - - 10 A VGS=8V, VDS=0V 50 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=50V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 1.6 2.2 ID=200mA, VGS=4.5V - 1.7 2.4 ID=200mA, VGS=2.5V - 1.9 2.7 RDS (on)*  ID=100mA, VGS=1.8V or Gate-source leakage Min. - 2.0 4.0 ID=40mA, VGS=1.5V - 2.4 7.2 ID=20mA, VGS=1.2V l Yfs l * 0.4 - - S ID=200mA, VDS=10V Input capacitance Ciss - 25 - pF VDS=10V Output capacitance Coss - 6 - pF VGS=0V Reverse transfer capacitance Crss - 3 - pF f=1MHz Turn-on delay time td(on) * - 4 - ns ID=100mA, VDD 30V tr * - 6 - ns VGS=4.5V td(off) * - 15 - ns RL=300 tf * - 55 - ns RG=10 Rise time e N co ew m m D es en ig de ns d f Forward transfer admittance Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Forward voltage VSD * 1.2 Unit V Conditions Is=200mA, VGS=0V N ot R *Pulsed Max. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/5 2010.06 - Rev.B RUE002N05 Data Sheet Electrical characteristic curves 0.4 Ta=25°C Pulsed VGS= 1.2V 0.2 VGS= 1.0V 0.1 0.3 Ta=25°C Pulsed VGS=1.2V 0.2 VGS=1.0V 0.1 0 0.4 0.6 0.8 1 0 2 VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 0.1 VGS= 4.5V Pulsed 1 0.1 0.01 1 N 0.1 0.01 1 1.5 0.1 0.1 1 100 VGS= 2.5V Pulsed 1 0.1 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 0.01 0.1 1 DRAIN-CURRENT : ID[A] 100 VGS= 1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 2 Fig.3 Typical Transfer Characteristics DRAIN-CURRENT : ID[A] R 1 ot STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN-CURRENT : ID[A] VGS= 1.8V Pulsed 0.5 GATE-SOURCE VOLTAGE : VGS[V] 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 0 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 0.1 0.01 8 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 1 6 Fig.2 Typical Output Characteristics(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 10 4 e N co ew m m D es en ig de ns d f STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] Fig.1 Typical Output Characteristics(Ⅰ) Ta= 25°C Pulsed 0.01 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.001 0 0.2 0.1 VGS=0.8V VGS= 0.8V 0 VDS= 10V Pulsed or 0.3 1 VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.4 1 100 VGS= 1.2V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 3/5 2010.06 - Rev.B Data Sheet Ta= -25°C Ta=25°C Ta=75°C Ta=125°C VGS=0V Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0 1 DRAIN-CURRENT : ID[A] 0.5 8 ID= 20mA 7 6 ID=200mA 5 4 3 2 1 1.5 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage e N co ew m m D es en ig de ns d f 1000 Ta=25°C VDD=30V VGS=4.5V tf 100 td(off) tr 10 td(on) 1 0.01 CAPACITANCE : C [pF] SWITCHING TIME : t [ns] 1 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Forward Transfer Admittance vs. Drain Current 1000 Ta=25°C Pulsed 9 0 0.01 0.1 0.001 10 or VDS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[] 1 1 SOURCE CURRENT : Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] RUE002N05 RG=10 Pulsed 0.1 1 DRAIN-CURRENT : ID[A] Ciss 10 Crss 1 0.1 0.01 0.1 Coss 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage N ot R Fig.13 Switching Characteristics 100 Ta=25°C f=1MHz VGS=0V www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 4/5 2010.06 - Rev.B RUE002N05 Data Sheet Measurement circuits Pulse width ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching waveforms e N co ew m m D es en ig de ns d f Fig.1-1 Switching time measurement circuit or VGS N ot R Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 5/5 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. or The content specified herein is subject to change for improvement without notice. e N co ew m m D es en ig de ns d f The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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