SCS320AHGC9

SCS320AH Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 20A QC 47nC TO-220ACP (1) (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible 4) High surge current capability (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planar type Tube Reel size (mm) - Tape width (mm) - Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS320AH lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) VR 650 V IF 20 A 123 A 104 A 450 A 81 *1 A Continuous forward current Surge nonrepetitive forward current (Tc= 125°C) PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10ms square, Tj=25°C IFRM Repetitive peak forward current 2 1≦PW≦10ms, Tj=25°C i t value IFSM ∫i dt 2 1≦PW≦10ms, Tj=150°C 75 A2s 54 A2s Total power disspation PD 115*2 W Junction temperature Tj 175 °C Tstg -55 to +175 °C Range of storage temperature *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/5 TSQ50221-SCS320AH 18.Nov.2019-Rev.002 Datasheet SCS320AH lElectrical characteristics (Tj = 25°C) Values Parameter Symbol VDC DC blocking voltage VF Forward voltage IR Reverse current Total capacitance Conditions Unit Min. Typ. Max. 650 - - V IF=20A,Tj=25°C - 1.35 1.50 V IF=20A,Tj=150°C - 1.44 1.71 V IF=20A,Tj=175°C - 1.50 - V VR=650V,Tj=25°C - 0.06 100 mA VR=650V,Tj=150°C - 4 400 mA VR=650V,Tj=175°C - 12 - mA VR=1V,f=1MHz - 1000 - pF VR=650V,f=1MHz - 91 - pF IR =100mA C Total capacitive charge QC VR=400V,di/dt=350A/ms - 47 - nC Switching time tC VR=400V,di/dt=350A/ms - 25 - ns L=1mH - 220 - mJ Non-repetetive Avaranche Energy Eava lThermal characteristics Values Parameter Symbol Conditions Rth(j-c) Thermal resistance Unit - Min. Typ. Max. - 0.87 1.3 K/W lTypical Transient Thermal Characteristics Symbol Value Rth1 8.13×10 -4 Rth2 4.07×10 -2 Rth3 8.31×10 -1 Tj PD Unit K/W Value Cth1 9.17×10 -5 Cth2 5.94×10 -4 Cth3 1.68×10 -3 Rth,n Rth1 Cth1 Symbol Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/5 TSQ50221-SCS320AH 18.Nov.2019-Rev.002 Datasheet SCS320AH lElectrical characteristic curves Fig.2 VF - IF Characteristics Fig.1 VF - IF Characteristics 30 100 25 Forward Current : IF [A] Forward Current : IF [A] 10 1 Ta= -25ºC 0.1 Ta=25ºC Ta=75ºC 0.01 Ta=125ºC Ta=175ºC 0.0 0.5 1.0 1.5 Ta=25ºC Ta=175ºC 20 Ta=125ºC 15 Ta=75ºC 10 5 0 0.001 2.0 0.0 2.5 0.5 Forward Voltage : VF [V] 1.0 1.5 2.0 2.5 Forward Voltage : VF [V] Fig.3 VR - IR Characteristics Fig.4 VR-Ct Characteristics 10 Ta=125ºC 1 Ta=75ºC Ta=25ºC 0.1 Ta= -25ºC 0.01 0.001 0 200 400 600 Capacitance Between Terminals : Ct [pF] 10,000 Ta=175ºC Reverse Current : IR [mA] Ta= -25ºC Pulsed Pulsed Reverse Voltage : VR [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1,000 100 10 Ta=25ºC f=1MHz 1 0.01 0.1 1 10 100 1000 Reverse Voltage : VR [V] 3/5 TSQ50221-SCS320AH 18.Nov.2019-Rev.002 Datasheet SCS320AH lElectrical characteristic curves Fig.6 Power Dissipation 1 120 Ta=25ºC Single Pulse 100 Power Dissipation [W] Transient Thermal Resistance : ZthJC [K/W] Fig.5 Typical Transient Thermal Resistance vs. Pulse Width 0.1 0.01 0.001 0.000001 80 60 40 20 0 0.001 1 25 50 Pulse Width : PW [s] Peak Forward Current : IP [A] Peak Forward Current : IP [A] 200 150 Duty=0.1 Duty=0.2 Duty=0.5 50 25 50 75 100 150 175 Duty=0.1 150 Duty=0.2 100 Duty=0.5 50 Duty=0.8 D.C. D.C. 0 125 Fig.8*4 Typical peak forward current derating curve IP - Tc (Not guaranteed) 200 Duty=0.8 100 Case Temperature : Tc [ºC] Fig.7*3 Maximum peak forward current derating curve IP - Tc 100 75 0 125 150 175 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] *3 Based on max Vf, max Rth(j-c) Valid for switching of above 10kHz, excluding D.C. curve. *4 Based on typ Vf, typ Rth(j-c) Typical value, not guaranteed Valid for switching of above 10kHz, excluding D.C. curve www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/5 TSQ50221-SCS320AH 18.Nov.2019-Rev.002 Datasheet SCS320AH lElectrical characteristic curves Fig.10 Typical capacitance store energy 1000 25 Capacitance stored energy : EC[mJ] Surge non-repetitive forward current : IFSM [A] Fig.9 Surge non-repetitive forward current vs. Pulse width (Sinusoidal waveform) 100 Ta=25ºC Single Pulse 10 0.00001 20 15 10 5 0 0.0001 0.001 0.01 0 200 Pulse Width : PW [s] 400 600 Reverse Voltage : VR [V] lSymplified forward characteristic model Fig.11 Equivalent forward current curve Forward Current : IF VF = Vth + Rdiff IF Vth ( Tj ) = a0 + a1 Tj Rdiff ( Tj ) = b0 + b1 Tj + b2 Tj2 Symbol Vth 1/Rdiff Unit a0 9.66×10 -1 V a1 -1.1×10 -3 V/°C b0 1.76×10 -2 W b1 3.73×10 -5 W/°C b2 3.84×10 -7 W/°C2 Tj in ºC; -55 ºC < Tj < 175ºC ; IF < 40 A Forward Voltage : VF www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Typical Value 5/5 TSQ50221-SCS320AH 18.Nov.2019-Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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