TT8U2_12

1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode. Applications Switching Packaging specifications Type TT8U2 Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Channel temperature Power dissipation *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U02 Inner circuit Taping TR 3000  (8) (7) (6) (5) Package Code Basic ordering unit (pieces) Symbol VDSS VGSS Limits 20 10 2.4 9.6 0.8 9.6 150 1.0 Unit V V A A A A C W / ELEMENT (1) ANODE (2) ANODE (3) SOURCE (4) GATE (5) DRAIN (6) DRAIN (7) CATHODE (8) CATHODE ∗1 (1) (2) (3) (4) ∗1 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP *1 Tch *2 PD Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation *1 60Hz / 1Cycle *2 Mounted on a ceramic board Symbol VRM VR IF *1 IFSM Limits 30 20 1.0 3.0 150 1.0 Unit V V A A C W / ELEMENT Tj PD*2 Parameter Total power dissipation Range of Storage temperature * Mounted on a ceramic board Symbol PD* Tstg Limits 1.25 55 to 150 Unit W / TOTAL C www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/5 2012.02 - Rev.B TT8U2 Electrical characteristics (Ta=25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Symbol IGSS IDSS VGS (th) * RDS (on) Min. 20 0.3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed DataSheet Typ. 80 105 150 180 850 60 50 9 25 55 45 6.7 1.7 0.6 Max. 100 1 1.0 105 140 225 360 - Unit nA V A V Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA Drain-source breakdown voltage V(BR)DSS m ID=2.4A, VGS=4.5V m ID=1.2A, VGS=2.5V m ID=1.2A, VGS=1.8V m ID=0.5A, VGS=1.5V S pF pF pF ns ns ns ns nC nC nC VDS=10A, ID=2.4V VDS=10V VGS=0V f=1MHz VDD 10V,VGS=4.5V ID=1.2A, RL 8.3 RG=10 VDD 10V,VGS=4.5V ID=2.4A, RL 4.2 ,RG=10 l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * 2.4 - Body diode(source-drain) (Ta=25°C) Parameter Forward Voltage *Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.4A, VGS=0V Parameter Forward Voltage drop Reverse leakage Symbol VF IR Min. Typ. 0.48 Max. 0.52 10 Unit V A Conditions IF=1.0A VR=10V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/5 2012.02 - Rev.B TT8U2 Electrical characteristic curves (Ta=25°C) 　 DataSheet 10 8 DRAIN CURRENT : -ID[A] 6 4 2 VGS= −1.5V 0 0 0.2 0.4 0.6 0.8 1 Ta=25°C Pulsed VGS= −4.5V VGS= −2.5V VGS= −1.8V 10 DRAIN CURRENT : -ID[A] 8 6 4 2 0 0 2 4 6 8 10 VGS= −1.5V Ta=25°C VGS= −4.5V Pulsed VGS= −2.5V VGS= −1.8V 10 VDS= −10V Pulsed DRAIN CURRENT : -ID[A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 Ta=25°C Pulsed VGS= −1.5V VGS= −1.8V VGS= −2.5V VGS= −4.5V 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=−25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= −4.5V Pulsed 1000 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= −1.8V Pulsed 1000 VGS= −1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= −10V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10 0.1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/5 2012.02 - Rev.B TT8U2 　 DataSheet REVERSE DRAIN CURRENT : -Is [A] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed 1 250 200 ID= −1.2A 150 ID= −2.4A 100 50 0 0 2 4 6 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 tf td(off) Ta=25°C VDD= −10V VGS= −4.5V RG=10Ω Pulsed 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 tr 1 td(on) 0.1 1 10 0.001 0 0.5 1 1.5 8 10 0.01 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics GATE-SOURCE VOLTAGE : -VGS [V] 5 4 3 2 1 0 0 2 4 6 8 10000 Ta=25°C f=1MHz VGS=0V 1000 Coss 100 Crss 10 0.01 0.1 1 10 100 Ciss Ta=25°C VDD= −10V ID= −2.4A RG=10Ω Pulsed CAPACITANCE : C [pF] TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 100000 pulsed 1 pulsed REVERSE CURRENT : IR[mA] 1000 100 10 1 Ta= −25°C 0.1 0.01 0 5 10 15 20 25 30 Ta = 75°C Ta = 25°C FORWARD CURRENT : IF[A] 10000 Ta = 125°C 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.001 0 100 200 300 400 500 600 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage FORWARD VOLTAGE : VF[mV] Fig.2 Forward Current vs. Forward Voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/5 2012.02 - Rev.B TT8U2 Measurement circuits Pulse Width DataSheet VGS ID RL VDS VGS 10% 50% 10% 90% 50% 10% 90% RG D.U.T. VDD VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2012 ROHM Co., Ltd. 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