UM5K1N

UM5K1N Transistors Small switching (30V, 0.1A) UM5K1N !Features 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits. !Applications Interfacing, switching (30V, 100mA) ROHM : UMT5 E I A J : SC-88A !External dimensions (Units : mm) (4) (3) 0.65 0.65 1.3 0.9 0.2 (6) 1.25 2.1 0.15 0.7 0.1Min. 0to0.1 Each lead has same dimensions Abbreviated symbol : K1 !Structure Silicon N-channel MOSFET !Equivalent circuit (6) (4) (1) Tr1 Gate (2) Source (3) Tr2 Gate (4) Tr2 Drain (6) Tr1 Drain ∗ A protection diode has been built in between Tr1 Tr2 Gate Protection Diode (1) (2) ∗ Gate Protection Diode (3) ∗ the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltagesare exceeded. !Packaging specifications Package Type Code Basic ordering unit (pieces) UM5K1N Taping TR 3000 (1) 2.0 (2) UM5K1N Transistors !Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD∗2 Tch Tstg Limits 30 ±20 100 200 100 200 150 150 −55∼+150 Unit V V mA mA mA mA mW ˚C ˚C Total power dissipation (Tc=25˚C) Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤50% ∗2 With each pin mounted on the recommended lands. !Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-stage resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tr Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Unit µA V µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V ID=10mA, VDS=3V VDS=5V VGS=0V f=1MHz ID=10mA, VDD 5V VGS=5V RL=500Ω RGS=10Ω !Electrical characteristic curves GATE THRESHOLD VOLTAGE : VGS (th) (V) 0.15 4V DRAIN CURRENT : ID (A) 200m 3V DRAIN CURRENT : ID (A) 3.5V Ta=25˚C Pulsed 100m 50m 20m 10m 5m 2m 1m 0.5m VDS=3V Pulsed 2 VDS=3V ID=0.1mA Pulsed 1.5 0.1 2.5V 1 0.05 2V VGS=1.5V Ta=125˚C 75˚C 25˚C −25˚C 0.5 0.2m 4 5 0 0 1 2 3 0.1m 0 1 2 3 4 0 −50 −25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (˚C) Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature UM5K1N Transistors 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=4V Pulsed 50 20 10 5 Ta=125˚C 75˚C 25˚C −25˚C 20 10 5 Ta=125˚C 75˚C 25˚C −25˚C VGS=2.5V Pulsed 15 Ta=25˚C Pulsed 10 2 1 0.5 0.001 0.002 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static drain-source on-state resistance vs. drain current ( I ) Fig.5 Static drain-source on-state resistance vs. drain current ( II ) Fig.6 Static drain-source on-state resistance vs. gate-source voltage 9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) REVERSE DRAIN CURRENT : IDR (A) 8 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 ID=100mA VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : Yfs (S) 0.5 VDS=3V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m 0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=−25˚C 25˚C 75˚C 125˚C VGS=0V Pulsed ID=50mA Ta=125˚C 75˚C 25˚C −25˚C 100 125 150 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 CHANNEL TEMPERATURE : Tch (˚C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.9 Reverse drain current vs. source-drain voltage ( I ) REVERSE DRAIN CURRENT : IDR (A) 200m 100m 50m Ta=25˚C Pulsed 50 SWITCHING TIME : t (ns) 20 CAPACITANCE : C (pF) Ta=25˚C f=1MHZ VGS=0V Ciss 1000 tf 500 td (off) 200 100 50 20 10 5 2 0.1 0.2 tr td (on) Ta=25˚C VDD=5V VGS=5V RG=10Ω Pulsed 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V 10 5 0V Coss Crss 2 1 0.5 0.1 0 0.5 1 1.5 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.10 Reverse drain current vs. source-drain voltage ( II ) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 13 and 14 for the measurment circuit and resultant waveforms) UM5K1N Transistors !Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td (off) tf toff VDD td (on) ton tr Fig.13 Switching time measurement circuit Fig.14 Switching time waveforms Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0