UMZ30N

Zener Diode UMZ30N Applications Voltage regulation (Common anode dual chips) Dimensions (Unit : mm) 2.0±0.2 0.3±0.1 Land size figure(Unit : mm) 1.3 Each lead has same dimension (3) 0.15±0.05 0.65 Features 1)Small mold type.(UMD3) 2)High reliability (2) （0.65） （0.65） (1) 1.25±0.1 2.1±0.1 0∼0.1 0.1Min 0.9Min. 0.8Min. UMD3 1.3±0.1 0.7±0.1 0.9±0.1 Construction Silicon epitaxial planar R O H M :U M D 3 JED EC :S O T-323 JEI :S C -70 TA dot ( year w eek f actory) Structure Taping specifications（Unit : mm ） Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation (*1） Junction temperature Storage temperature (*1) Total of 2 elements Electrical characteristi (Ta=25°C) Parameter Symbol VZ Zener voltage IR Reverse current P Tj Tstg Limits 200 150 -55 to +150 Unit mW °C °C Min. 29.19 - Typ. - Max. 30.69 0.10 Unit V µA Conditions IZ=5mA VR=23V www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.A 1.6 Data Sheet Electrical characteristi curves 10 Ta=-25° C Ta=25° C Ta=75° C Ta=125° C 100 10 1 Ta=125° C 100 f=1MHz REVERSE CURRENT:IR (nA) ZENER CURRENT:Iz(mA) Ta=75° C 1 Ta=25° C 0.1 0.01 0.001 0.0001 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 25 0.1 10 Ta=-25° C 0.01 0.001 27 28 29 30 31 32 33 34 0 5 10 15 20 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 25 ZENER VOLTAGE : Vz(V) Vz-Iz CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30.3 REVERSE CURRENT : IR(nA) ZENER VOLTAGE:Vz(Ｖ) 30.2 CAPACITANCE BETWEENTERMINALS:Ct(pF) Ta=25° C IZ=5mA n=30pcs 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 AVE:0.082nA Ta=25° C VR=23V n=30pcs 10 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP Ct DISPERSION MAP AVE:9.09pF Ta=25° C f=1MHz VR=0V n=10pcs 30.1 30 AVE:30.01V 29.9 29.8 0 Vz DISPERSION MAP 10000 DYNAMIC IMPEDANCE:Zz(Ω) 1000 100 10 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 www.rohm.com ©2009 ROHM Co., Ltd. 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