2N4403-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4403 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMILTTER 2. BASE 3. COLLECTOR  Equivalent Circuit 2N 4403 X X XXX 2N4403 = Device code Solid dot = Green molding compound device, if none, the normal device XXX = Code      !"#$ %!& 2N%% & TO-92 !" 1000pcs/Bag 2N%% & TO-92 # 2000pcs/Box MAXIMUM RATINGS (Ta=25  unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Vo ltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Currne t -Continuous -600 mA PC Collector Power dissipation 0.625 W -55ٞ +150  200 /W TJ,Tstg Operation Junction and Storage Temperature Range R JA Thermal Resistance, junction to Ambient www.jscj-elec.com 1 Rev. - 2.0 '(('()(*(* Ta =25  unless otherwise specified Parameter   Symbol Test conditions M! Typ Max U! Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1mA 30 hFE(2) VCE=-1V,IC=-1mA 60 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-V,IC=-150mA hFE(5) VCE=-2V,IC=-500mA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 100 300 20 VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V VBE(sat)1 IC=-150mA,IB=-15mA -0.95 V VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V Transition frequency fT Collector capacitance Cob VCE=-10V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=100KHz -0.75 200 MHz 8.5 pF 15 ns Delay time td Rise time tr VCC=-30V, IC=-150mA 20 ns Storage time tS IB1=- IB2=-15mA 225 ns Fall time tf 30 nS www.jscj-elec.com 2 Rev. - 2.0 y+-(".. Static Characteristic -200 COMMON EMITTER Ta=25ć COMMON EMITTER VCE=-2V hFE -0.9mA -0.8mA -0.7mA -150 —— IC Ta=100ć DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 -1mA IC (mA) -250 -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 Ta=25ć 100 -0.2mA IB=-0.1mA 10 -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat -700 —— VCE -1 IC IC (mA) IC —— β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -600 -100 VBEsat -1.2 β=10 -300 Ta=100ć -100 Ta=25ć -30 -10 -3 -1 -10 COLLECTOR CURRENT (V) -10 -100 -30 COLLECTOR CURRENT IC IC Ta=25ć -0.8 Ta=100ć -0.4 -0.0 -1 -600 -3 (mA) -10 -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 50 -600 —— IC -600 (mA) VCB/ VEB f=1MHz IE=0/IC=0 (pF) C Ta=100ć -10 Ta=25ć -1 -0.1 -0.0 -0.4 Cob 10 CAPACITANCE COLLECTOR CURRENT Ta=25ć Cib -100 IC (mA) COMMON EMITTER VCE=-2V -0.8 1 -0.1 -1.2 -1 fT -600 -10 REVERSE VOLTAGE BASE-EMITER VOLTAGE VBE (V) —— IC PC 750 —— V -30 (V) Ta VCE=-10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25ć -100 -10 625 500 375 250 125 0 -1 COLLECTOR CURRENT www.jscj-elec.com -10 -3 IC 0 -30 (mA) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (ć ) Rev. - 2.0 /0-!!.#!. m! A A1 b c D D1 E e e1 L  h D    D  inc   Max Max 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4.> 4.700?@?J 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 /0*.$$'&# NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.1 /0Tape and Reel www.jscj-elec.com 5 Rev. - 2.0