2N5401-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5401 TRANSISTOR (PNP) 1. EMITTER FEATURES z Switching and Amplification in High Voltage z Applications such as Telephony z Low Current z High Voltage 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage -160 VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 Collector cut-off current ICBO VCB=-120V,IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -50 nA hFE(1) VCE=-5V, IC=-1mA 80 hFE(2) VCE=-5V, IC=-10mA 60 hFE(3) VCE=-5V, IC=-50mA 50 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1 V 300 MHz DC current gain fT Transition frequency -5 VCE=-5V,IC=-10mA, f =30MHz V 300 100 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(2) RANK RANGE www.cj-elec.com A 60-100 B 100-150 1 150-200 C 200-300 H,Dec,2015 Typical Characteristics Static Characteristic —— IC COMMON EMITTER VCE=-5V -100uA -90uA -16 Ta=100 ℃ 300 hFE -80uA -70uA -12 DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25 ℃ IC (mA) -20 -60uA -50uA -8 -40uA -30uA Ta=25 ℃ 100 30 10 -20uA -4 3 IB=-10uA -0 -0 -5 -10 -15 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE -3 -1 -0.3 (V) -30 -10 COLLECTOR CURRENT IC VBEsat -1000 β=10 BASE-EMMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) -300 1 -0.1 -20 -100 Ta=100 ℃ Ta=25 ℃ -30 —— IC -100 -600 (mA) IC Ta=25 ℃ Ta=100 ℃ -500 β=10 -10 -0.3 -300 -3 -1 COLLECTOR CURRENT IC —— IC -100 -3 -1 -0.3 (mA) -10 COLLECTOR CURRENT VBE Cob/Cib 100 COMMON EMITTER VCE=-5V —— -100 -30 IC (mA) VCB/VEB f=1MHz IE=0/IC=0 Ta=25 ℃ -30 Cib C (pF) Ta=100 ℃ -10 CAPACITANCE COLLECTOR CURRENT IC (mA) -100 -30 -10 Ta=25 ℃ -3 -1 10 Cob -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 300 —— VBE 1 -0.1 -1.0 -1 -0.3 (V) IC PC 750 -10 -3 REVERSE BIAS VOLTAGE —— V -20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) 250 TRANSITION FREQUENCY fT (MHz) VCE=-5V Ta=25℃ 200 150 100 50 0 625 500 375 250 125 0 -0 -5 -10 -15 COLLECTOR CURRENT www.cj-elec.com -20 IC -25 -30 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) H,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 H,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 H,Dec,2015