2N5551

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5551 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V 0.6 A IC Collector Current Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ PC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Test V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO conditions Min Typ Max Unit IC=100µA,IE=0 180 V IC=1mA,IB=0 160 V IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA hFE(1) VCE=5V, IC=1mA 80 hFE(2) VCE=5V, IC=10mA 80 hFE(3) VCE=5V, IC=50mA 50 VCE(sat)（1） IC=10mA,IB=1mA 0.15 V VCE(sat)（2） IC=50mA,IB=5mA 0.2 V VBE (sat)（1） IC=10mA,IB=1mA 1 V VBE (sat)（2） IC=50mA,IB=5mA 1 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 6 pF Emitter input capacitance Cib VBE=0.5V,IC=0, f=1MHz 20 pF Transition frequency fT VCE=10V,IC=10mA, f=100MHz 300 MHz 100 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(2) RANK RANGE www.cj-elec.com 80-100 A B C 100-150 150-200 200-300 1 D,Dec,2015 Typical Characteristics Static Characteristic 18 80uA 15 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 IB=20uA 3 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 COLLECTOR CURRENT IC VCEsat —— 0.3 IC 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 200 100 200 IC 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C Ta=100℃ Ta=25℃ Cib (pF) IC (mA) 100 100 (mA) β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 (V) β=10 COLLECTOR CURRENT Ta=100℃ hFE 70uA 12 DC CURRENT GAIN IC (mA) 90uA COLLECTOR CURRENT hFE —— IC 500 Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 1 10 REVERSE VOLTAGE IC PC 750 150 —— V 20 (V) Ta VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 100 50 625 500 375 250 125 0 1 COLLECTOR CURRENT www.cj-elec.com 10 3 IC 20 0 30 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) D,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Dec,2015