JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N6520
TRANSISTOR (PNP)
1. EMITTER
FEATURES
z Complement to 2N6517
2. BASE
3. COLLECTOR
0
Equivalent Circuit
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72
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Collector-Base Voltage
-350
V
#$'&
Collector-Emitter Voltage
-350
V
#'%&
Emitter-Base Voltage
-5
V
$
Collector Current -Continuous
"(
Collector Power Dissipation
+
TJ, *
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#
-0.5
A
625
mW
Thermal Resistance I rom Junction
Wo Ambient
/W
Operation Junction and Storage Temperature Range
1
-55 a
Rev. - 2.0
'5'$ $5$6$ ' $
Ta =25 unless otherwise specified
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
*
Test
conditions
Min
Typ
Max
Unit
IC=- 0.1mA,IE=0
-350
V
IC=-1mA,IB=0
-350
V
-5
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
Collector cut-off current
ICBO
VCB=-250V,IE=0
-0.05
A
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.05
A
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
hFE
VCE(sat)
VBE (sat)
VBE
fT
*
VCE=-10V, IC=-1mA
20
VCE=-10V, IC=-10mA
30
VCE=-10V, IC=-30mA
30
200
VCE=-10V, IC=-50mA
20
200
VCE=-10V, IC=-100mA
15
IC=-10mA,IB=-1mA
-0.3
V
IC=-20mA,IB=-2mA
-0.35
V
IC=-30mA,IB=-3mA
-0.5
V
IC=-50mA,IB=-5mA
-1
V
IC=-10mA,IB=-1mA
-0.75
V
IC=-20mA,IB=-2mA
-0.85
V
IC=-30mA,IB=-3mA
-0.9
V
-2
V
200
MHz
VCE=-10V, IC=-100mA
VCE=-20V,IC=-10mA,f=20MHz
40
*Pulse test: pulse width 300s, duty cycle 2.0%.
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2
Rev. - 2.0
Typical Characteristics
IC
-80
hFE
1000
COMMON EMITTER
Ta=25ć
-70
(mA)
VCE
——
——
IC
COMMON EMITTER
VCE= -10V
-500uA
-450uA
-50
-350uA
DC CURRENT GAIN
COLLECTOR CURRENT
-300uA
-40
-250uA
-30
-200uA
-150uA
-20
Ta=100ć
hFE
-400uA
IC
-60
100
Ta=25ć
-100uA
-10
IB=-50uA
-0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
-11
10
-12
-1
IC
-10
COLLECTOR CURRENT
VBEsat ——
-1000
IC
(mA)
-100
-200
IC
-900
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-10000
-10
VCE (V)
-1000
Ta=100 ć
-100
Ta=25ć
-800
Ta=25ć
-700
-600
-500
Ta=100 ć
-400
-300
-200
ȕ=10
-10
-1
-10
COLLECTOR CURRENT
IC
——
IC
(mA)
-100
ȕ=10
-100
-1
-200
VBE
(mA)
IC
COMMON EMITTER
VCE=-10V
-0
-300
-600
-900
50
TRANSITION FREQUENCY
T =2
5ć
a
T =1
00ć
a
-10
COMMON EMITTER
VCE= -20V
Ta=25ć
10
-1
-1200
-10
-5
BASE-EMITTER VOLTAGE V BE (mV)
300
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cob
10
1
-0.1
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V
(V)
-10
(mA)
Ta
500
400
300
200
100
0
-1
REVERSE VOLTAGE
——
IC
600
Ta=25 ć
Cib
PC
700
CT
(pF)
100
-100
COLLECTOR CURRENT
f=1MHz
IE=0/IC=0
CAPACITANCE
——
IC
(MHz)
fT
-100
IC
(mA)
fT
100
-500
-100
COLLECTOR CURRENT
-500
COLLECTOR CURRENT
-10
-20
3
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
(ć )
125
150
Rev. - 2.0
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A
A1
b
c
D
D1
E
e
e1
L
h
(
( -
4
4
3.300
3.700
0.130
0.146
1.100
1.400
0.043
0.055
0.380
0.550
0.015
0.022
0.360
0.510
0.014
0.020
4.
4.700
3.430
0.135
4.300
4.700
0.169
0.185
1.270 TYP
0.050 TYP
2.440
2.640
0.096
0.104
14.100
14.500
0.555
0.571
1.600
0.063
0.000
0.380
0.000
0.015
&9:**"5
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev. - 2.0
&9:7DSHDQG5HHO
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5
Rev. - 2.0
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