2SA966

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC(T TO-92L 2SA966 TRANSISTOR (PNP) 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A Pc Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA , IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA ,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current ICBO VCB= -30V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC= -500mA VCE(sat) IC= -1.5 A, IB= -0.03A -2 V Base-emitter voltage VBE IC= -500mA,VCE=-2V -1 V Transition frequency fT VCE= -2V, IC=-500mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz Collector-emitter saturation voltage 100 320 120 MHz 30 pF CLASSIFICATION OF hFE Rank Range www.cj-elec.com O Y 100-200 160-320 1 A,Jun,2014 C,Mar,2016 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 2 Dimensions In Millimeters Min. Max. 3.750 4.050 1.280 1.580 0.380 0.550 0.620 0.780 0.350 0.450 4.750 5.050 4.000 7.850 8.150 1.270 TYP. 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Dimensions In Inches Min. Max. 0.148 0.159 0.050 0.062 0.015 0.022 0.024 0.031 0.014 0.018 0.187 0.199 0.157 0.309 0.321 0.050 TYP. 0.096 0.104 0.543 0.559 0.063 0.000 0.012 C,Mar,2016 www.cj-elec.com 3 C,Mar,2016