2SC2073

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ Parameter unless Symbol otherwise Test specified) conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =100μA, IE=0 150 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 10 μA Emitter cut-off current IEBO VEB=5V, IC=0 10 μA DC current gain hFE VCE=10V, IC=0.5A VCE(sat) IC=0.5A, IB=50mA Base-emitter voltage VBE VCE=10V, IC=0.5A Transition frequency fT VCE=10V, IC=0.5A 4 MHz VCB=10V, IE=0, f=1MHz 35 pF Collector-emitter saturation voltage Collector output capacitance www.cj-elec.com Cob 1 40 140 0.65 1.5 V 0.85 V A,Nov,2014 TO-220-3L Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ www.cj-elec.com Dimensions In Millimeters Min Max 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 12.060 12.460 2.540 TYP 4.980 5.180 2.590 2.890 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 2 Dimensions In Inches Min Max 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.475 0.491 0.100 TYP 0.196 0.204 0.102 0.114 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 B,Nov,2014