2SD1760

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR (NPN) TO-252-2L FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA DC current gain hFE(1) VCE=3V, IC=500mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range 82 390 IC=2A, IB=200mA 1 V VCE=5V, IC=500mA,f=30MHz 90 MHz VCB=10V, IE=0, f=1MHz 40 pF hFE(1) P Q R 82-180 120-270 180-390 Marking www.cj-elec.com 1 C,Nov,2014 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ IC 0.8 5.6mA hFE 6.3mA 4.9mA DC CURRENT GAIN IC —— COMMON EMITTER VCE= 3V 7.0mA (A) 1.0 COLLECTOR CURRENT hFE 1000 1.2 4.2mA 0.6 3.5mA 2.8mA 0.4 2.1mA Ta=100℃ Ta=25℃ 100 1.4mA 0.2 IB=0.7mA 0.0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 0.4 6 VCE (V) 100 VCEsat IC —— 1000 IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 600 Ta=25℃ Ta=100 ℃ 400 100 T a= 0℃ 10 5℃ =2 Ta 10 1 200 0.1 1 10 100 COLLECTOR CURREMT IC 3000 —— IC 1000 1 3000 (mA) 10 100 1000 COLLECTOR CURRENT Cob/Cib VBE —— IC 3000 (mA) VCB/VEB 1000 COMMON EMITTER VCE=3V 1000 3000 (mA) IC 1000 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT β=10 f=1MHz IE=0/IC=0 Ta=25 ℃ (pF) (mA) 100 Cib CAPACITANCE 10 T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT C IC 1 Cob 1 0.1 0 200 400 600 800 1000 10 0.1 1200 BASE-EMMITER VOLTAGE VBE (mV) PC 2.0 COLLECTOR POWER DISSIPATION PC (W) 100 —— 1 REVERSE VOLTAGE 10 V 30 (V) Ta 1.5 1.0 0.5 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 C,Nov,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   C,Nov,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 C,Nov,2014