2SD1802

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1802 TRANSISTOR (NPN) TO-252 -2L FEATURES Adoption of FBET,MBIT Processes z Large Current Capacity and Wide ASO z Low Collector-to-Emitter Saturation Voltage z Fast Switching Speed 1.BASE z 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC =0 6 V Collector cut-off current ICBO VCB=40V, IE=0 1 µA Emitter cut-off current IEBO VEB=4V, IC=0 1 µA hFE(1) VCE=2V, IC=100mA 100 hFE(2) VCE=2V, IC=3A 35 560 DC current gain Collector-emitter saturation voltage VCE(sat) IC=2A, IB=100mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB=100mA 1.2 V fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range www.cj-elec.com VCE=10V, IC=50mA 150 MHz VCB=10V, IE=0, f=1MHz 25 pF hFE(1) R S T U 100-200 140-280 200-400 280-560 1 B,Nov,2014 Typical Characteristics Static Characteristic 500 (mA) 2.7mA 400 —— IC COMMON EMITTER VCE=2V IC hFE 2.4mA DC CURRENT GAIN 2.1mA COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25℃ 3.0mA 300 1.8mA 1.5mA 200 1.2mA 0.9mA 100 Ta=100℃ Ta=25℃ 100 0.6mA IB=0.3mA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— 10 VCE 10 12 1 10 100 COLLECTOR CURRENT (V) IC 1200 VBEsat —— 1000 IC IC β=20 900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 Ta=25℃ Ta=100℃ 600 100 Ta=100℃ Ta=25℃ 10 10 100 1000 COLLECTOR CURRENT IC 3000 —— IC 300 10 3000 (mA) 100 VBE 1000 Cob/ Cib IC (mA) —— VCB/ VEB f=1MHz IE=0/ IC=0 (mA) Ta=25℃ (pF) Cib C IC CAPACITANCE T =2 5℃ a 100 T =1 00℃ a COLLECTOR CURRENT 3000 1000 COLLECTOR CURRENT 1000 10 100 Cob COMMON EMITTER VCE=2V 1 0 300 600 900 BASE-EMITTER VOLTAGE PC 1.2 COLLECTOR POWER DISSIPATION PC (W) 3000 (mA) —— VBE 10 0.1 1200 1 REVERSE VOLTAGE (V) 10 V 20 (V) Ta 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 B,Nov,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   B,Nov,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 B,Nov,2014