3DD13002B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（NPN） TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE  13002B Equivalent Circuit 13002B 'HYLFHFRGH  Solid dot=Green molding compound device, XXX z if none,the normal device ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method 3DD13002B TO-92 Bulk 1000pcs/Bag 3DD13002B-TA TO-92 Tape 2000pcs/Box Pack Quantity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature www.cj-elec.com -55 ~ 150 1 ℃ E,Aug,2017  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6 V ICBO VCB= 600V,IE=0 100 µA ICEO VCE= 400V,IB=0 100 µA IEBO VEB= 6 V, IC=0 100 µA hFE1 VCE= 10 V, IC=200mA 9 hFE2 VCE= 10 V, IC=0.25mA 5 Collector cut-off current Emitter cut-off current Dc c urrent 40 gain Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA 1.1 V Transition frequency fT Fall time tf Storage time ts VCE=10V, IC=100mA f =1MHz IC=1A, MHz 5 IB1=-IB2=0.2A VCC=100V 0.5 µs 2.5 µs CLASSIFICATION OF hFE1 Range 9-15 15-20 20-25 www.cj-elec.com 25-30 30-35 35-40  E,Aug,2017 Typical Characteristics Static Characteristic 300 COMMON EMITTER Ta=25℃ IC 9mA hFE 10mA 200 COLLECTOR CURRENT —— IC COMMON EMITTER VCE= 10V 8mA DC CURRENT GAIN (mA) 250 hFE 100 7mA 150 6mA 5mA 100 4mA Ta=100℃ Ta=25℃ 10 3mA 50 2mA IB=1mA 0 1 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 12 14 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— 800 100 IC (mA) IC β=5 β=5 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.5 800 1 10 VBE fT 10 (mA) IC Ta=25℃ 8 TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT 100 —— IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=10V 800 100 COLLECTOR CURREMT (mA) 800 (mA) 10 COLLECTOR CURRENT VCE (V) 1 6 4 2 0.1 0 200 400 600 800 BASE-EMITER VOLTAGE V 1000 Cob/Cib —— BE 1000 0 20 1200 VCB/VEB (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ 100 C CAPACITANCE PC 1200 Cib Cob 10 80 —— 100 IC 120 (mA) Ta 900 600 300 0 1 REVERSE VOLTAGE www.cj-elec.com 60 COLLECTOR CURRENT f=1MHz IE=0/IC=0 1 0.1 40 (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta 125 150 (℃ ) E,Aug,2017 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 4 E,Aug,2017 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP5 E,Aug,2017