A44

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A44 TO – 92 TRANSISTOR (NPN) 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A ICM Collector Current -Pulsed 0.3 A PC Collector Power Dissipation 625 mW Thermal Resistance from Junction to Ambient 200 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=400V,IE=0 Collector cut-off current ICEO VCE=400V,IB=0 Emitter cut-off current IEBO VEB=4V,IC=0 hFE(1) VCE=10V, IC=10mA 80 hFE(2) VCE=10V, IC=1mA 70 hFE(3) VCE=10V, IC=100mA 40 hFE(4) VCE=10V, IC=50mA 80 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency 0.1 μA 5 μA 0.1 μA 300 VCE(sat)(1) IC=10mA,IB=1mA 0.2 V VCE(sat)(2) IC=50mA,IB=5mA 0.3 V VBE(sat) IC=10mA,IB=1mA 0.75 V fT VCE=20V, IC=10mA,f=30MHz 50 MHz CLASSIFICATION OF hFE(1) RANK A RANGE 80-100 www.cj-elec.com B 100-200 1 C 200-300 G,Dec,2015 Typical Characteristics Static Characteristic 72uA 64uA 56uA 10 48uA 40uA 32uA 5 hFE —— 1000 COMMON EMITTER Ta=25℃ 80uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 15 IC COMMON EMITTER VCE= 10V Ta=100℃ Ta=25℃ 100 24uA 16uA IB=8uA 0 10 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE 25 1 VBEsat —— I C 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 10 100 COLLECTOR CURRENT Cob / Cib 1000 —— IC VCB / VEB 3 PC COLLECTOR POWER DISSIPATION PC (mW) 750 —— Ta=25℃ 50 10 100 fT —— IC 200 (A) IC VCE=20V Ta=25℃ 30 10 10 V Ta=100℃ 100 Cob REVERSE VOLTAGE 100 COLLECTOR CURRENT Cib 1 IC 150 1 TRANSITION FREQUENCY fT (MHz) CAPACITANCE C (pF) 1 200 (mA) 0 200 Ta=25℃ 10 IC β=10 (A) f=1MHz IE=0 / IC=0 100 100 VCEsat —— 200 β=10 1 10 COLLECTOR CURRENT (V) (V) 1 10 COLLECTOR CURRENT 100 IC (mA) Ta 625 500 375 250 125 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 G,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 G,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 G,Dec,2015