BAV199W,115

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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BAV199W Low-leakage double diode Product data sheet Supersedes data of 1998 Jan 09 1999 May 11 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199W PINNING • Small plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 anode • Switching time: typ. 0.8 μs 2 cathode • Continuous reverse voltage: max. 75 V 3 cathode; anode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. handbook, halfpage 3 3 APPLICATIONS 1 • Low-leakage current applications in surface mounted circuits. 1 2 2 Top view MAM391 DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. Marking code: JY- = made in Hong Kong; JYt = made in Malaysia. Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode unless otherwise specified VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power dissipation single diode loaded; Ts = 90 °C; see Fig.2 − 135 mA double diode loaded; Ts = 90 °C; see Fig.2 − 110 mA − 500 mA tp = 1 μs − 4 A tp = 1 ms − 1 A tp = 1 s square wave; Tj = 25 °C prior to surge; see Fig.4 − 0.5 A single diode loaded; Ts = 90 °C − 150 mW double diode loaded; Ts = 90 °C − 240 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C 1999 May 11 2 NXP Semiconductors Product data sheet Low-leakage double diode BAV199W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA − 900 mV IF = 10 mA − 1 000 mV IF = 50 mA − 1100 mV IF = 150 mA − 1 250 mV VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3 μs THERMAL CHARACTERISTICS SYMBOL Rth j-s 1999 May 11 PARAMETER CONDITIONS thermal resistance from junction to soldering point 3 Ts = 90 °C VALUE UNIT 400 K/W NXP Semiconductors Product data sheet Low-leakage double diode BAV199W GRAPHICAL DATA MBK522 300 IF (mA) MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) (1) 200 200 (1) (2) 100 (2) (3) 100 0 0 100 Ts (°C) 0 200 0 0.8 1.2 V F (V) 1.6 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. (1) Single diode loaded. (2) Double diodes loaded. Fig.2 0.4 Maximum permissible continuous forward current as a function of soldering point temperature; per diode. Fig.3 Forward current as a function of forward voltage; per diode. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (μs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. 1999 May 11 4 NXP Semiconductors Product data sheet Low-leakage double diode MLB754 2 10halfpage handbook, IR (nA) 10 BAV199W MBG526 2 handbook, halfpage Cd (pF) (1) 1 1 10 1 (2) 10 2 0 10 3 0 0 50 100 150 o T j ( C) 5 10 15 200 VR = 75 V. (1) Maximum values. (2) Typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature; per diode. handbook, full pagewidth tr VR (V) 20 Diode capacitance as a function of reverse voltage; per diode; typical values. tp t D.U.T. RS = 50 Ω V = VR IF x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 5 μs; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery time test circuit and waveforms. 1999 May 11 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage double diode BAV199W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 May 11 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet Low-leakage double diode BAV199W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 11 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 May 11 Document order number: 9397 750 05947