BUK7S0R9-40H
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
2 May 2019
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and
qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
•
•
•
•
•
Fully automotive qualified to beyond AEC-Q101:
• -55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:
• Designed for smaller footprint and improved power density over older wire bond packages
such as D²PAK for today’s space constrained high power automotive applications
• Thin package and copper clip enables LFPAK88 to be highly efficient thermally
LFPAK copper clip technology enabling improvements over wire bond packages by:
• Increased maximum current capability and excellent current spreading
• Improved RDSon
• Low source inductance
• Low thermal resistance Rth
LFPAK Gull Wing leads:
• Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal
cycling stress, unlike traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment
• Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:
• Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
• Improved SOA and avalanche capability compared to standard TrenchMOS
• Tight VGS(th) limits enable easy paralleling of MOSFETs
3. Applications
•
•
•
•
•
•
12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
LED lighting
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
40
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
375
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
375
W
[1]
BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
0.51
0.73
0.9
mΩ
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
20
40
nC
nC
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]
VDS = 20 V
-
60
-
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
-
0.78
-
[1]
[2]
375A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
includes capacitive recovery
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
Graphic symbol
1
G
gate
2
S
source
3
S
source
G
4
S
source
mbb076
mb
D
mounting base; connected to
drain
D
1
2
3
S
4
LFPAK88 (SOT1235)
6. Ordering information
Table 3. Ordering information
Type number
Package
BUK7S0R9-40H
Name
Description
Version
LFPAK88
plastic, single-ended surface-mounted package (LFPAK88); 4
leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body
SOT1235
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7S0R9-40H
7S0R940H
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
40
V
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
Symbol
Parameter
Conditions
Min
Max
Unit
VGS
gate-source voltage
DC; Tj ≤ 175 °C
-10
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
375
W
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
375
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
1749
A
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
500
A
-
1749
A
-
631
mJ
[1]
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[2]
Avalanche ruggedness
EDS(AL)S
[1]
[2]
[3]
[4]
non-repetitive drainID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[3] [4]
375A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
500A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03aa16
120
Pder
(%)
aaa-029501
500
ID
(A)
400
(1)
80
300
200
40
100
0
Fig. 1.
0
50
100
150
Tmb (°C)
0
200
Fig. 2.
Product data sheet
25
50
75
100
125
150 175
Tmb (°C)
200
VGS ≥ 10 V
(1) 375A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Normalized total power dissipation as a
function of mounting base temperature
BUK7S0R9-40H
0
Continuous drain current as a function of
mounting base temperature
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
ID
(A)
aaa-029222
104
Limit RDSon = VDS / ID
103
tp = 10 µs
DC
102
100 µs
10
1 ms
10 ms
100 ms
1
10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
IAL
(A)
aaa-029221
103
(1)
102
(2)
10
(3)
1
10-1
10-3
10-2
10-1
1
tAL (ms)
10
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Conditions
thermal resistance from Fig. 5
junction to mounting
base
BUK7S0R9-40H
Product data sheet
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2 May 2019
Min
Typ
Max
Unit
-
0.35
0.4
K/W
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
aaa-029223
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
P
single shot
δ=
Fig. 5.
10-5
10-4
10-3
10-2
T
t
tp
10-3
10-6
tp
T
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
43
-
V
ID = 250 µA; VGS = 0 V; Tj = -40 °C
-
40.5
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
40
-
V
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
Fig. 10
2.4
3
3.6
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10
-
-
4.3
V
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 10
1
-
-
V
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.2
1.85
µA
VDS = 16 V; VGS = 0 V; Tj = 125 °C
-
4.7
25
µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
293
1000
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
0.51
0.73
0.9
mΩ
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12
0.72
1.1
1.43
mΩ
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 12
0.8
1.2
1.58
mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12
1
1.5
1.96
mΩ
f = 1 MHz; Tj = 25 °C
0.4
1
2.5
Ω
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
118
166
nC
-
34
52
nC
-
20
40
nC
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
RG
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
Symbol
Parameter
Conditions
Min
Typ
Max
Ciss
input capacitance
-
9206
12888 pF
Coss
output capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
1908
2671
pF
Crss
reverse transfer
capacitance
-
344
757
pF
td(on)
turn-on delay time
-
30
-
ns
tr
rise time
-
24
-
ns
td(off)
turn-off delay time
-
72
-
ns
tf
fall time
-
31
-
ns
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
0.76
1
V
trr
reverse recovery time
-
48
-
ns
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
[1]
-
60
-
nC
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
-
0.78
-
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
-
0.71
-
[1]
includes capacitive recovery
aaa-029224
400
ID
(A)
RDSon
(mΩ)
VGS = 5.5 V
10 V
320
aaa-029225
4
5V
3
7V
6V
240
2
160
4.5 V
80
1
4V
0
Fig. 6.
0
1
2
3
VDS (V)
0
4
0
4
8
12
16
VGS (V)
20
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
aaa-029226
400
ID
(A)
320
10-2
240
10-3
175°C
160
aaa-018138
10-1
ID
(A)
Min
Typ
Max
10-4
25°C
80
0
10-5
Tj = -55°C
0
1
2
3
4
5
6
7
VGS (V)
10-6
8
VDS = 8 V
Fig. 8.
VGS(th)
(V)
0
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = 5 V
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9.
Sub-threshold drain current as a function of
gate-source voltage
aaa-018139
5
RDSon
(mΩ)
4
aaa-029227
4
4.5 V
5V
3.2
Max
3
2.4
Typ
2
6V
1.6
7V
5.5 V
Min
1
0.8
VGS = 10 V
0
-60
-30
0
30
60
90
120 150
Tj (°C)
0
180
ID = 1 mA ; VDS = VGS
Product data sheet
80
160
240
320
ID (A)
400
Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
BUK7S0R9-40H
0
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
a
aaa-026897
2.4
VGS
(V)
2
aaa-029228
10
8
1.6
6
32 V
1.2
4
VDS = 14 V
0.8
2
0.4
0
-60
-30
0
30
60
90
120 150
Tj (°C)
0
180
0
20
40
60
80
100
120
QG (nC)
140
Tj = 25 °C; ID = 25 A
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
aaa-029229
105
VDS
C
(pF)
ID
104
VGS(pl)
Ciss
VGS(th)
Coss
VGS
QGS2
QGS1
QGS
103
QGD
QG(tot)
Crss
003aaa508
102
10-1
Fig. 14. Gate charge waveform definitions
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
aaa-029230
400
IS
(A)
320
240
160
175°C
80
0
Tj = 25°C
0
0.2
0.4
0.6
0.8
1
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
11. Package outline
Plastic single-ended surface-mounted package (LFPAK88); 4 leads
SOT1235
b2
E1
D1
A1
C
A3
θ
L
y C
detail X
A
A2
E
c2
mounting
base
D
H
L2
1
2
3
e
e
4
e
c
b
(4x)
w
X
A
0
4
8 mm
scale
Dimensions (mm are the original dimensions)
Unit
max
nom
min
mm
A1
A2
0.15
1.7
0.00
1.5
A3
0.25
b
b2
c
c2
D(1)
D1(1)
E(1)
E1(1)
1.1
7.3
0.24
0.55
6.3
5.1
8.1
6.9
0.9
7.1
0.18
0.45
6.1
4.9
7.9
6.7
e
2.0
H(1)
L
L2
8.1
0.8
1.3
7.8
0.6
0.9
w
y
0.25
0.10
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Outline
version
References
IEC
JEDEC
JEITA
θ
8°
0°
sot1235_po
European
projection
Issue date
17-08-02
17-08-07
SOT1235
Fig. 17. Package outline LFPAK88 (SOT1235)
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
12. Soldering
Footprint information for reflow soldering of LFPAK88 package
SOT1235
9.2
8.8
8.6
0.3
1.85
1.7
2.05
0.1
1.76
0.2
2.1
0.7
1.2
0.2
0.7
1.25
0.2
4.275
5.7
2.925
1.15
3.74
9.4
7.8
0.2
1.225
1.9
1.6 1.4 1.3
1.6
6.55
6.8
7
1.2
1.1
2
1.4
7.8
recommended stencil thickness: 0.125 mm
occupied area
solder resist
solder land
solder paste
Dimensions in mm
Issue date
18-12-12
18-12-13
sot1235_fr
Fig. 18. Reflow soldering footprint for LFPAK88 (SOT1235)
BUK7S0R9-40H
Product data sheet
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
13. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
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internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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BUK7S0R9-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 May 2019
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Nexperia B.V. 2019. All rights reserved
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BUK7S0R9-40H
Nexperia
N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12
©
Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 2 May 2019
BUK7S0R9-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 May 2019
©
Nexperia B.V. 2019. All rights reserved
13 / 13