BUK7S0R9-40HJ

BUK7S0R9-40H N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 2 May 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. 2. Features and benefits • • • • • Fully automotive qualified to beyond AEC-Q101: • -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: • Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications • Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: • Increased maximum current capability and excellent current spreading • Improved RDSon • Low source inductance • Low thermal resistance Rth LFPAK Gull Wing leads: • Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages • Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: • Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint • Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paralleling of MOSFETs 3. Applications • • • • • • 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection LED lighting Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 375 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 375 W [1] BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 0.51 0.73 0.9 mΩ ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14 - 20 40 nC nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2] VDS = 20 V - 60 - S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C - 0.78 - [1] [2] 375A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal design and operating temperature. includes capacitive recovery 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 S source 3 S source G 4 S source mbb076 mb D mounting base; connected to drain D 1 2 3 S 4 LFPAK88 (SOT1235) 6. Ordering information Table 3. Ordering information Type number Package BUK7S0R9-40H Name Description Version LFPAK88 plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body SOT1235 7. Marking Table 4. Marking codes Type number Marking code BUK7S0R9-40H 7S0R940H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 2 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 Symbol Parameter Conditions Min Max Unit VGS gate-source voltage DC; Tj ≤ 175 °C -10 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 375 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 375 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1749 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 500 A - 1749 A - 631 mJ [1] Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C [2] Avalanche ruggedness EDS(AL)S [1] [2] [3] [4] non-repetitive drainID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω; source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [3] [4] 375A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal design and operating temperature. 500A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal design and operating temperature. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 Pder (%) aaa-029501 500 ID (A) 400 (1) 80 300 200 40 100 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Fig. 2. Product data sheet 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V (1) 375A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Normalized total power dissipation as a function of mounting base temperature BUK7S0R9-40H 0 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 3 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 ID (A) aaa-029222 104 Limit RDSon = VDS / ID 103 tp = 10 µs DC 102 100 µs 10 1 ms 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-029221 103 (1) 102 (2) 10 (3) 1 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-mb) Conditions thermal resistance from Fig. 5 junction to mounting base BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 Min Typ Max Unit - 0.35 0.4 K/W © Nexperia B.V. 2019. All rights reserved 4 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 aaa-029223 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 0.02 P single shot δ= Fig. 5. 10-5 10-4 10-3 10-2 T t tp 10-3 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; Fig. 10 2.4 3 3.6 V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 10 1 - - V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.2 1.85 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 4.7 25 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 293 1000 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 0.51 0.73 0.9 mΩ VGS = 10 V; ID = 25 A; Tj = 105 °C; Fig. 12 0.72 1.1 1.43 mΩ VGS = 10 V; ID = 25 A; Tj = 125 °C; Fig. 12 0.8 1.2 1.58 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12 1 1.5 1.96 mΩ f = 1 MHz; Tj = 25 °C 0.4 1 2.5 Ω ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14 - 118 166 nC - 34 52 nC - 20 40 nC Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon RG drain-source breakdown voltage gate-source threshold voltage drain leakage current gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 5 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 Symbol Parameter Conditions Min Typ Max Ciss input capacitance - 9206 12888 pF Coss output capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 1908 2671 pF Crss reverse transfer capacitance - 344 757 pF td(on) turn-on delay time - 30 - ns tr rise time - 24 - ns td(off) turn-off delay time - 72 - ns tf fall time - 31 - ns VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 5 Ω Unit Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.76 1 V trr reverse recovery time - 48 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V [1] - 60 - nC S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C - 0.78 - IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C - 0.71 - [1] includes capacitive recovery aaa-029224 400 ID (A) RDSon (mΩ) VGS = 5.5 V 10 V 320 aaa-029225 4 5V 3 7V 6V 240 2 160 4.5 V 80 1 4V 0 Fig. 6. 0 1 2 3 VDS (V) 0 4 0 4 8 12 16 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 25 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 6 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 aaa-029226 400 ID (A) 320 10-2 240 10-3 175°C 160 aaa-018138 10-1 ID (A) Min Typ Max 10-4 25°C 80 0 10-5 Tj = -55°C 0 1 2 3 4 5 6 7 VGS (V) 10-6 8 VDS = 8 V Fig. 8. VGS(th) (V) 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig. 9. Sub-threshold drain current as a function of gate-source voltage aaa-018139 5 RDSon (mΩ) 4 aaa-029227 4 4.5 V 5V 3.2 Max 3 2.4 Typ 2 6V 1.6 7V 5.5 V Min 1 0.8 VGS = 10 V 0 -60 -30 0 30 60 90 120 150 Tj (°C) 0 180 ID = 1 mA ; VDS = VGS Product data sheet 80 160 240 320 ID (A) 400 Tj = 25 °C Fig. 10. Gate-source threshold voltage as a function of junction temperature BUK7S0R9-40H 0 Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 7 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 a aaa-026897 2.4 VGS (V) 2 aaa-029228 10 8 1.6 6 32 V 1.2 4 VDS = 14 V 0.8 2 0.4 0 -60 -30 0 30 60 90 120 150 Tj (°C) 0 180 0 20 40 60 80 100 120 QG (nC) 140 Tj = 25 °C; ID = 25 A Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-029229 105 VDS C (pF) ID 104 VGS(pl) Ciss VGS(th) Coss VGS QGS2 QGS1 QGS 103 QGD QG(tot) Crss 003aaa508 102 10-1 Fig. 14. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 8 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 aaa-029230 400 IS (A) 320 240 160 175°C 80 0 Tj = 25°C 0 0.2 0.4 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 9 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 11. Package outline Plastic single-ended surface-mounted package (LFPAK88); 4 leads SOT1235 b2 E1 D1 A1 C A3 θ L y C detail X A A2 E c2 mounting base D H L2 1 2 3 e e 4 e c b (4x) w X A 0 4 8 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A1 A2 0.15 1.7 0.00 1.5 A3 0.25 b b2 c c2 D(1) D1(1) E(1) E1(1) 1.1 7.3 0.24 0.55 6.3 5.1 8.1 6.9 0.9 7.1 0.18 0.45 6.1 4.9 7.9 6.7 e 2.0 H(1) L L2 8.1 0.8 1.3 7.8 0.6 0.9 w y 0.25 0.10 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. Outline version References IEC JEDEC JEITA θ 8° 0° sot1235_po European projection Issue date 17-08-02 17-08-07 SOT1235 Fig. 17. Package outline LFPAK88 (SOT1235) BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 10 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 12. Soldering Footprint information for reflow soldering of LFPAK88 package SOT1235 9.2 8.8 8.6 0.3 1.85 1.7 2.05 0.1 1.76 0.2 2.1 0.7 1.2 0.2 0.7 1.25 0.2 4.275 5.7 2.925 1.15 3.74 9.4 7.8 0.2 1.225 1.9 1.6 1.4 1.3 1.6 6.55 6.8 7 1.2 1.1 2 1.4 7.8 recommended stencil thickness: 0.125 mm occupied area solder resist solder land solder paste Dimensions in mm Issue date 18-12-12 18-12-13 sot1235_fr Fig. 18. Reflow soldering footprint for LFPAK88 (SOT1235) BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 11 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 13. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 12 / 13 BUK7S0R9-40H Nexperia N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Legal information......................................................12 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 2 May 2019 BUK7S0R9-40H Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2019 © Nexperia B.V. 2019. All rights reserved 13 / 13