MMST2222A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST2222A SOT-323 TRANSISTOR ( NPN ) FEATURES y Epitaxial planar die construction y Complementary PNP Type available(MMST2907A) MARKING: K3P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE 2. EMITTER 3. COLLECTOR Parameter Symbol VCBO VCEO VEBO IC PC Value Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Operation Junction and Storage Temperature Range TJ,Tstg Unit 75 40 6 600 200 V V V mA mW -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) hFE(6) Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Output Capacitance Delay time Rise time Storage time Fall time Cob td tr tS tf www.jscj-elec.com Test conditions IC= 10μA, IE=0 IC= 10mA, IB=0 IE=10μA, IC=0 VCB=70 V, IE=0 VCE=35V , IB=0 VEB= 3V , IC=0 VCE=10V, IC=0.1mA VCE=10V, IC= 1mA VCE=10V, IC= 10mA VCE=10V, IC= 150mA VCE=10V, IC= 500mA VCE=1V, IC= 150mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA f=100MHz VCB=10V, IE= 0,f=1MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA 1 Min Typ Max Unit 100 100 100 V V V nA nA nA 75 40 6 35 50 75 100 40 35 300 1 0.3 2.0 1.2 300 V V MHz 8 10 25 225 60 pF ns ns ns ns Rev. - 2.0 Typical Characteristics 500 0.9mA 0.20 400 0.8mA hFE 0.7mA IC 0.6mA 0.15 DC CURRENT GAIN (A) COMMON EMITTER VCE=10V 1mA COMMON EMITTER Ta=25℃ COLLECTOR CURRENT —— IC hFE Static Characteristic 0.25 0.5mA 0.10 0.4mA 0.3mA 0.05 Ta=100℃ 300 200 Ta=25℃ 100 0.2mA IB=0.1mA 0.00 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 —— 10 VCE 0 0.1 12 1 (V) 10 100 COLLECTOR CURRENT IC VBEsat 1.2 IC 600 (mA) —— IC 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.3 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT IC IC 1 600 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 600 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) 100 IC (mA) COMMON EMITTER VCE=10V C Ta=100℃ 10 CAPACITANCE COLLECTOR CURRENT 600 (mA) Ta=25℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 Cob 10 1 0.1 1.0 1 BASE-EMMITER VOLTAGE VBE (V) 500 fT 10 REVERSE VOLTAGE —— IC Pc 300 —— V 20 (V) Ta COMMON EMITTER VCE=20V TRANSTION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 100 10 100 0 0 80 COLLECTOR CURRENT www.jscj-elec.com 200 IC (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) Rev. - 2.0 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-323 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0