MMST3904

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC(T MMST3904 TRANSISTOR (NPN) SOT–323 FEATURES  Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO* IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO* IE=10µA, IC=0 5 V Collector cut-off current ICBO* VCB=60V, IE=0 60 nA Collector cut-off current ICEO* VCE=40V, IB=0 500 nA Collector cut-off current ICEX VCE=30V, VBE(off)=3V 50 nA DC current gain hFE* Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Transition frequency fT VCE=1V, IC=100µA 40 VCE=1V, IC=1mA 70 VCE=1V, IC=10mA 100 VCE=1V, IC=50mA 60 300 IC=10mA, IB=1mA 0.25 V IC=50mA, IB=5mA 0.3 V IC=10mA, IB=1mA 0.85 V IC=50mA, IB=5mA 0.95 V VCE=20V,IC=10mA , f=100MHz 300 MHz Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF Collector output capacitance Cib VEB=0.5V, IE=0, f=1MHz 8 pF Delay time td VCC=3V, VBE(off)=0.5V IC=10mA, 35 ns Rise time tr IB1=1mA Storage time ts Fall time tf VCC=3V, IC=10mA, IB1= IB2=1mA 35 ns 225 ns 75 ns *Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%. www.cj-elec.com 1 C,Sep,2014 A,Jun,2014 Typical Characteristics Static Characteristic VCE= 1V COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 80uA 70uA 60uA 10 o Ta=100 C 250 hFE 90uA IC (mA) 100uA 15 hFE —— IC 300 DC CURRENT GAIN 20 50uA 40uA 30uA 200 150 o Ta=25 C 100 5 20uA 50 IB=10uA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 COLLECTOR-EMITTER VOLTAGE VCE 3.5 0 0.1 4.0 VBEsat —— IC 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 VCEsat —— 400 β=10 0.8 1 COLLECTOR CURRENT (V) Ta=25℃ 0.6 Ta=100℃ 0.4 IC 100 (mA) 200 IC β=10 300 200 Ta=100℃ 100 Ta=25℃ 0.2 0.1 0 1 10 COLLECTOR CURRENT 100 IC 1 200 COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) Pc 250 100 o Ta=100 C COLLECTOR CURRENT 100 COLLECTOR CURRENT IC —— VBE 200 10 (mA) 10 Ta=25℃ 1 —— IC 200 (mA) Ta 200 150 100 50 VCE=1V 0.1 0.3 0 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE www.cj-elec.com 0.8 0.9 1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2 100 Ta 125 150 (℃ ) C,Sep,2014 A,Jun,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 3 C,Sep,2014 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 4 C,Sep,2014 A,Jun,2014