MMST3904

UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. !External dimensions (Units : mm) UMT3904 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.9±0.1 0.2 0.7±0.1 1.25±0.1 2.1±0.1 0~0.1 0.3 +0.1 −0 0.15±0.05 All terminals have same dimensions !Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT3904 UMT3 R1A T106 3000 SST3904 MMST3904 SST3 R1A T116 3000 SMT3 R1A T146 3000 2N3904 TO-92 T93 3000 SST3904 (1) 2.9±0.2 1.9±0.2 0.95 0.95 (2) 0.95 +0.2 −0.1 0.45±0.1 0.2 1.3 +0.1 − 2.4±0.2 0~0.1 0.2Min. 0.1~0.4 ROHM : UMT3 EIAJ : SC-70 (3) (1) Emitter (2) Base (3) Collector (3) ROHM : SST3 0.4 +0.1 −0.05 +0.1 0.15 −0.06 All terminals have same dimensions (1) Emitter (2) Base (3) Collector 2.9±0.2 MMST3904 (1) 1.9±0.2 0.95 0.95 (2) 1.1 +0.2 −0.1 0.8±0.1 0.2 1.6 +0.1 − 0.4 +0.1 −0.05 +0.1 0.15 −0.06 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT3904, SST3904, Collector MMST3904 power dissipation SST3904, MMST3904 2N3904 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits 60 40 6 0.2 0.2 Unit V V V A W W W °C °C All terminals have same dimensions 4.8±0.2 2N3904 4.8±0.2 3.7±0.2 PC 0.35 0.625 150 −55~+150 (12.7Min.) * 2.5Min. 0.15 0.5 +0.05 − 0.3~0.6 !Absolute maximum ratings (Ta = 25°C) 2.8±0.2 0~0.1 ROHM : SMT3 EIAJ : SC-59 (3) (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 (1) (2) 5 (3) 0.3 2.5 +0.1 − 0.45±0.1 2.3 Tj Tstg (1) Emitter (2) Base (3) Collector * When mounted on a 7 x 5 x 0.6 mm ceramic board. !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICES IEBO VCE(sat) VBE(sat) Min. 60 40 6 0.65 40 70 100 60 30 300 Typ. Max. 50 50 0.2 0.3 0.85 0.95 300 4 8 35 35 200 50 Unit V V V nA nA V V IC = 10µA IC = 1mA IE = 10µA VCB = 30V VEB = 3V IC/IB = 10mA/1mA IC/IB = 50mA/5mA IC/IB = 10mA/1mA IC/IB = 50mA/5mA VCE = 1V , IC = 0.1mA VCE = 1V , IC = 1mA VCE = 1V , IC = 10mA VCE = 1V , IC = 50mA VCE = 1V , IC = 100mA VCE = 20V , IE = −10mA, f = 100MHz VCB = 10V , f = 100kHz VEB = 0.5V , f = 100kHz VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA Conditions DC current transfer ratio hFE ~ - Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf MHz pF pF ns ns ns ns UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors !Electrical characteristic curves COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) 10 COLLECTOR CURRENT : IC (mA) 40 35 Ta=25°C Ta=25°C IC / IB=10 0.3 8 30 6 25 20 4 15 10 2 5.0 IB=0µA 0 0 20 10 COLLECTOR-EMITTER VOLTAGE : VCE (V) 0.2 0.1 0 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter output characteristics Fig.2 Collector-emitter saturation voltage vs. collector current 500 Ta=25°C DC CURRENT GAIN : hFE VCE=1V 3V 5V 10V 100 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( Ι ) 500 VCE=5V DC CURRENT GAIN : hFE Ta=125°C Ta=25°C Ta=−55°C 100 10 5 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.4 DC current gain vs. collector current ( ΙΙ ) UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors 500 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Ta=25°C VCE=5V f=1kHz 1.8 1.6 Ta=25°C IC / IB=10 AC CURRENT GAIN : hFE 100 1.2 0.8 0.4 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC (mA) 10 100 0 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current Fig.6 Base-emitter saturation voltage vs. collector current 1.8 BASE EMITTER VOLTAGE : VBE(ON) (V) 1.6 Ta=25°C VCE=5V 1000 Ta=25°C IC / IB=10 1000 Ta=25°C IC / IB=10 TURN ON TIME : ton (ns) 1.2 RISE TIME : t r (ns) VCC=40V 0.8 100 40V 15V VCC=3V 100 0.4 0 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) 10 1.0 10 COLLECTOR CURRENT : IC (mA) 100 10 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Turn-on time vs. collector current Fig.9 Rise time vs. collector current 1000 Ta=25°C IC=10IB1=10IB2 1000 Ta=25°C VCC=40V IC/IB=10 CAPACITANCE (pF) 50 Ta=25°C f=1MHz STORAGE TIME : ts (ns) FALL TIME : tf (ns) 10 Cib Cob 40V 100 15V VCE=3V 100 1 10 1.0 10 COLLECTOR CURRENT : IC (mA) 100 10 1.0 10 100 COLLECTOR CURRENT : IC (mA) 0.5 0.1 1.0 10 REVERSE BIAS VOLTAGE (V) 100 Fig.10 Storage time vs. collector current Fig.11 Fall time vs. collector current Fig.12 Input / output capacitance vs. voltage UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR-EMITTER VOLTAGE : VCE (V) h PARAMETER NORMALIZED TO 1mA 100 100MHz 200MHz 400MHz 500MHz 300 MHz 10 Ta=25°C 1000 Ta=25°C VCE=5V 100 VCE=5V f=270Hz hoe 10 hie 100 hre hfe 1.0 300MHz 200MHz 0.1 0.1 100MHz 1 1.0 10 100 COLLECTOR CURRENT : IC (mA) 10 1.0 10 COLLECTOR CURRENT : IC (mA) 100 0.1 0.1 Ta=25°C IC=1mA hie=3.84kΩ hfe=141 −5 hre=5.03 × 10 hoe=5.58µS 1 10 100 COLLECTOR CURRENT : IC (mA) Fig.13 Gain bandwidth product Fig.14 Gain bandwidth product vs. collector current Fig.15 h parameter vs. collector current COLLECTOR CUTOFF CURRENT : ICBO (A) 10µ VCB=25V 100k SOURCE RESISTANCE : RS (Ω) SOURCE RESISTANCE : RS (Ω) Ta=25°C VCE=5V f=10kHz 100k Ta=25°C VCE=5V f=1kHz dB 12 B 8d dB 12 1µ B 8d B 5d B 3d B 0d 1. 10k 100n 3d 1. 0d B 10k 5d B B 10n 1k NF 1n 3. =1 1k 0d .0 B dB 3. 0d B NF =1 .0 dB B 0d B 5. 0d 8. 5. 8. 0d B 0d B 0.1n 0 25 50 75 100 125 150 ANBIENT TEMPERATURE : Ta (°C) 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) 10 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) 10 Fig.16 Noise characteristics ( Ι ) Fig.17 Noise characteristics ( ΙΙ ) Fig.18 Noise characteristics ( ΙΙΙ ) 100k SOURCE RESISTANCE : RS (Ω) Ta=25°C VCE=5V f=10Hz 12 10 NOISE FIGURE : NF (dB) Ta=25°C VCE=5V IC=100µA RS=10kΩ dB 12 B 8d B 5d B 3d 10k 8 6 4 2 0 10 1k NF =3 5. 8. .0 0d dB B 100 0.01 Fig.19 Noise characteristics ( ΙV ) B 0d 0.1 1 COLLECTOR CURRENT : IC (mA) 10 100 1k FREQUENCY : f (Hz) 10k 100k Fig.20 Noise vs. collector current