RB521S-40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB521S-40 SCHOTTKY BARRIER DIODE SOD-523 FEATURE    Ultra small mold type Low VF High reliability MARKING: S The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 45 V 40 V RMS reverse voltage 28 V Average rectified output current 200 mA 1 A VRM Non-repetitive peak reverse voltage VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR(RMS) IO IFSM Non-repetitive peak forward surge current @t=8.3ms PD Power dissipation 150 mW Thermal resistance from junction to ambient 667 ℃/W TJ Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Reverse voltage V(BR) Reverse current IR Forward voltage www.cj-elec.com VF Test conditions IR=0.1mA Min Typ Max 40 V VR=10V 20 VR=40V 90 IF=10mA 0.16 0.3 IF=100mA 0.31 0.45 IF=200mA 0.41 0.54 1 Unit μA V D,Mar,2015 Typical Characteristics Forward Characteristics Reverse Characteristics 1000 200 REVERSE CURRENT IR a T= 25 ℃ a =1 00 ℃ 10 T FORWARD CURRENT IF (uA) (mA) 100 1 0.1 0 100 200 FORWARD VOLTAGE 300 VF 400 100 Ta=100℃ 10 1 0.1 0.1 500 Ta=25℃ 5 10 15 20 25 REVERSE VOLTAGE (mV) 30 VR 35 40 (V) Power Derating Curve 150 POWER DISSIPATION PD (mW) 200 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 (℃ ) 2 D,Mar,2015 SOD-523 Package Outline Dimensions 6\PERO A A1 b c D E E1 E2 L  'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF SOD-523 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2015 SOD-523 Tape and Reel www.cj-elec.com 4 D,Mar,2015