S8050-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR (NPN) FEATURES z &RPSOLPHQWDU WR6 z &ROOHFWRUFXUUHQW,& $ 1.EMITTER 2.BASE 3.COLLECTOR 1  233 = XXX Equivalent Circuit 6 'HYLFHFRGH  )'  +,' -,  . -/   "/2, ' . - 01 ("2FE 555   &('  ,& &  "  ! "-.* "-.* "-./  6 TO-92 Bulk 1000pcs/Bag 67$  TO-92 Tape 2000pcs/Box       #$%&  Collector-Base Voltage 40 V #$'&  Collector-Emitter Voltage 25 V #'%&  Emitter-Base Voltage 5 V $  Collector Current -Continuous 0.5 A Collector Power Dissipation 625 mW  Thermal Resistance rom Junction o Ambient  200  /W "(   ș +  TJ, *  www.jscj-elec.com "    ! # Operation Junction and Storage Temperature Range 1 -55 a  Rev. - 2.0 '6'$ $6$7$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions  M T: M;  Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 A Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE= 1V, IC= 50mA 85 hFE(2) VCE= 1V, IC= 500mA 50 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V CLASSIFICATION OF Rank Range www.jscj-elec.com VCE= 6V, IC=20mA fT Transition frequency 150 f =30MHz MHz hFE(1) B C D D3 85-160 120-200 160-300 300-400 2 Rev. - 2.0 Typical Characteristics Static Characteristic 420uA DC CURRENT GAIN hFE 80 —— IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25ć 480uA COLLECTOR CURRENT IC (mA) hFE 1000 100 360uA 60 300uA 240uA 40 180uA Ta=100ć Ta=25ć 100 120uA 20 IB=60uA 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— IC VBEsat 2000 100 Ta=100ć Ta=25ć 30 1000 500 100 IC (mA) IC —— 30 10 ȕ=10 IC 100 —— IC 100 500 100 TRANSITION FREQUENCY fT (MHz) 10 Ta=100ć 3 Ta=25ć 0.3 0.4 0.6 fT Cob/ Cib —— 0.8 300 100 2 COLLECTOR POWER DISSIPATION PC (mW) Cob 10 3 1 0.1 0.3 1 REVERSE VOLTAGE www.jscj-elec.com 3 V 30 10 PC —— 750 Ta=25ć 10 (V) 100 (mA) Ta 500 375 250 125 0 25 50 75 AMBIENT TEMPERATURE 3 IC 625 0 20 500 (mA) IC COLLECTOR CURRENT VCB/ VEB Cib —— IC COMMON EMITTER VCE=6V 10 1.0 f=1MHz IE=0/ IC=0 30 100 Ta=25ć BASE-EMMITER VOLTAGE VBE (V) 100 30 10 1000 COMMON EMITTER VCE=1V 0.2 3 COLLECTOR CURRENT 30 0.1 0.0 1 (mA) VBE 1 Ta=25ć Ta=100ć ȕ=10 3 1 COLLECTOR CURRENT CAPACITANCE C (pF) 30 10 COLLECTOR CURRENT 300 10 COLLECTOR CURRENT IC (mA) 3 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 VCE 20 100 Ta 125 150 (ć ) Rev. - 2.0  &"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  ;  ; 3.700 0.130 0.146 3.300 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &**"6 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0