SS8050-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR (NPN) 1. EMITTER FEATURES Power Dissipation PCM : 1 W (TA=25.) : 2 W (TC=25.) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 85 hFE(2) VCE=1V, IC=800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V 1 V Base-emitter voltage VBE Transition frequency fT VCE=1V, IC=10mA VCE=10V, IC=50mA,f=30MHZ 100 MHz CLASSIFICATION OF hFE(1) Rank Range www.cj-elec.com B C D D3 85-160 120-200 160-300 300-400 1 C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015