S9012-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR (PNP) FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-1V,IC=-50mA 64 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT VCE=-6V, IC= -20mA 150 f=30MHz MHz CLASSIFICATION OF hFE Rank D E F G H I Range 64-91 78-112 96-135 112-166 144-202 190-300 J 300-400 C,Agu,2011 S9012 Typical Characteristics IC -4.5 VCE —— hFE -20uA COMMON EMITTER Ta=25℃ -18uA Ta=100℃ hFE -16uA -14uA DC CURRENT GAIN (mA) -3.0 COLLECTOR CURRENT -3.5 IC -4.0 -12uA -2.5 -10uA -2.0 -8uA -1.5 -6uA -1.0 Ta=25℃ 100 -4uA IB=-2uA -0.5 VCE=-1V -0.0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VBEsat —— -10 1 T a= -1 -10 -100 COLLECTOR CURRENT IC VCEsat -500 2 5℃ T a= -800 10 -12 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC —— 500 00 ℃ IC -500 (mA) IC —— -100 0℃ 10 T a= ℃ 25 T a= β=10 β=10 -10 -400 -1 -10 -100 COLLECTOR CURRENT IC -100 COLLECTOR CURRENT (mA) fT VBE —— 400 IC -500 (mA) IC (MHz) —— -10 fT -100 TRANSITION FREQUENCY T =2 5℃ a T =1 00 ℃ a COLLECTOR CURRENT IC (mA) -500 IC -1 -500 -10 COMMON EMITTER VCE=-1V 100 COMMON EMITTER VCE=-6V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) Cib Cob CAPACITANCE C PC 700 50 10 -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) f=1MHz IE=0/IC=0 —— IC (mA) Ta 600 500 400 300 200 100 Ta=25 ℃ 1 -0.1 0 -1 REVERSE VOLTAGE -10 V (V) -20 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) C,Agu,2011