2N5667N1

NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • • • Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 400V 300V 6V 5A 1.0A 76W 0.43W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case - TC = 25°C Min. Typ. Max. 2.3 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9189 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CER (1) Parameters Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Collector-Base Cut-Off Current Test Conditions IC = 1.0mA IE = 10µA VCE = 300V TA = 150°C VCB = 300V VCB = 400V IC = 0.5A VCE = 2V VCE = 5V TA = -55°C VCE = 5V VCE = 5V IB = 0.6A IB = 1.0A IB = 0.6A IB = 1.0A RBE = 100Ω IC = 0A Min. 400 Typ Max. Units V V(BR)EBO ICES (1) 6 0.2 100 0.1 1.0 25 25 10 10 5 0.4 1.0 1.2 1.5 V 75 mA µA ICBO hFE (1) Forward-current transfer ratio IC = 1.0A IC = 3A IC = 5A VCE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 3A IC = 5A IC = 3A IC = 5A VBE(sat) (1) DYNAMIC CHARACTERISTICS | hfe | Magnitude of CommonEmitter Small-Signal ShortCircuit forward Current, Transfer Ratio Output Capacitance IC = 0.5A f = 10MHz VCB = 10V f = 1.0MHz IC = 1.0A VCC = 100V IE = 0 VCE = 5V 2 7 - Cobo 120 pF ton Turn-On Time 0.4 µs toff Turn-Off Time IB1 = - IB2 = 50mA 2.5 Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9189 Issue 1 Page 2 of 3 NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. 3.05 (0.120) 1 3 10.16 (0.400) 0.76 (0.030) min. 5.72 (.225) 2 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) 0.50 (0.020) max. SMD0.5 (TO-276AA) Underside View Pad 1 – Emitter Pad 2 – Collector Pad 3 - Base S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9189 Issue 1 Page 3 of 3