74H1G66S

® 74H1G66 SINGLE BILATERAL SWITCH s s s s s s HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) LOW ”ON” RESISTANCE RON = 50Ω (TYP.)AT VCC=9V II/O=100µA SINE WAVE DISTORTION 0.042% (TYP.) AT VCC=4V f=1KHz WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 12V S (SOT23-5L) ORDER CODES : 74H1G66S performance combined with true CMOS low power consumption. The C input is provided to control the switch; the switch is ON when the C input is held high and off when C is held low. DESCRIPTION The 74H1G66 is an high-speed CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It has high speed PIN CONNECTION AND IEC LOGIC SYMBOLS February 2000 1/8 74H1G66 LOGIC DIAGRAM PIN DESCRIPTION PIN No 1 2 4 3 5 SYMBOL I/O O/I C GND VCC NAME AND FUNCT ION Independent Input/Output Independent Output/Input Enable Input (Active HIGH) Ground (0V) Positive Supply Voltage TRUTH TABLE CONTROL H L SWITCH F UNCTIO N ON OFF ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VI/O IIK IIOK IO PD Tstg TL Supply Voltage DC Input Voltage DC Input/Output Voltage Control Input DC Diode Current Input/Output DC Diode Current DC Output Source Sink Current Per Output Pin Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +13 -0.5 to VCC +0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. (*) 500mW: ≡ 65 oC derate to 300 mW by 10 mW/oC: 65 oC to85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VI/O Top tr, tf Supply Voltage Input Voltage (Control) Input/Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2V VCC = 4.5V VCC = 6V VCC = 10V Parameter Valu e 2.0 to 12 0 to VCC 0 to VCC -40 to +85 0 to 1000 0 to 500 0 to 400 0 to 250 Unit V V V o C ns 2/8 74H1G66 DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH High Level Input Voltage 2.0 4.5 9.0 12.0 VIL Low Level Input Voltage 2.0 4.5 9.0 12.0 R ON ON Resistance 4.5 9.0 12.0 4.5 9.0 12.0 IOFF Input/Output Leakage Current (SWITCH OFF) Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) Control Input Current Quiescent Supply Current 12.0 V I = VIH V I/ O = V CC to GND I I /O ≤ 1mA V I = VIH V I /O = V CC or GND I I /O ≤ 1mA V OS = VCC to GND V IS = V CC to GND VI = VI L V OS = VCC to GND VI = VIH V I = V CC to G ND V I = V CC or GND 96 55 45 70 50 45 o Value T A = 25 C Min. 1.5 3.15 6.3 8.4 0.5 1.35 2.7 3.6 170 85 80 100 75 70 ±0.1 Typ . Max. -40 to 85 C Min . 1.5 3.15 6.3 8.4 0.5 1.35 2.7 3.6 200 100 90 130 95 90 ±1.0 Max. o Un it V V Ω µA IIZ 12.0 ±0.1 ±1.0 µA µA µA IIN ICC 6.0 6.0 9.0 12.0 ±0.1 1 4 8 ±1.0 10 40 80 3/8 74H1G66 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf =6 ns) Symb ol Parameter V CC (V) Φ I/O Phase Difference Between Input and Output 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 R L = 1 KΩ Test Co ndition o Value T A = 25 C Min. Typ . Max. 10 50 4 3 3 18 8 6 6 20 10 8 8 30 30 30 30 5 6 0.5 15 10 10 10 8 7 100 20 12 12 115 23 20 18 -40 to 85 C Min . Max. 65 15 13 10 125 25 22 18 145 29 25 22 o Un it ns tPZL tPZH Output Enable Time ns tPLZ tPHZ Output Disable Time R L = 1 KΩ ns Maximum Control Input Frequency R L = 1 KΩ C L = 15 pF V OUT = 1/2V CC MHz C IN CI/O C IOS CPD Input Capacitance Switch Terminal Capacitance Feed Through Capacitance Power Dissipation Capacitance (note 1) pF pF pF pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC) Symb ol Parameter V CC (V) 4.5 9.0 4.5 9.0 4.5 9.0 4.5 9.0 V IN (Vp-p) 4 8 Adjust fI N voltage to Obtain odBm at V OS . Increase fIN Frequency until dB Meter reads -3dB R L = 50Ω, C L = 10pF V IN is centered at VCC /2. Adjust input for 0dBm R L = 600 Ω, C L = 50pF , fI N = 1MHz sine wave R L = 600 Ω, C L = 50pF , fI N = 1MHz sine wave (t r = t f = 6ns) Test Co nditi on Value Un it Sine Wave Distortion (THD) fMAX Frequency Responce (Switch ON) Feedthrough Attenuation (Switch OFF) Crosstalk (Control Input to Signal Ouput) fIN = 1 KHz RL = 10KΩ CL = 50 pF 0.05 0.04 200 200 -60 -60 60 100 % MHz dB mV 4/8 74H1G66 SWITCHING CHARACTERISTICS TEST CIRCUIT tPLZ, tPHZ, tPZL, tPZH. CROSSTALK (control to output) BANDWIDTH AND FEEDTHROUGH ATTENUATION GND (VSS) CI–O CI/O MAXIMUM CONTROL FREQUENCY GND (VSS) 5/8 74H1G66 CHANNEL RESITANCE (RON) ICC (Opr.) 6/8 74H1G66 SOT23-5L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 1.9 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 21.6 DIM. 7/8 74H1G66 Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. 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