FERD30SM100S
Field effect rectifier
Datasheet - production data
Description
The FERD30SM100S is based on a proprietary
technology that achieves the best in class VF/IR
trade-off for a given silicon surface.
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This 100 V rectifier has been optimized for use in
confined applications where both efficiency and
thermal performance are key.
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Table 1. Device summary
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Features
Symbol
Value
IF(AV)
30 A
VRRM
100 V
Tj (max)
+175 °C
VF(typ)
0.39 V
• ST proprietary process
• Reduce leakage current
• Low forward voltage drop
• High frequency operation
• ECOPACK®2 compliant component
January 2015
This is information on a product in full production.
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Characteristics
1
FERD30SM100S
Characteristics
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, anode terminals
short-circuited)
Symbol
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current, δ = 0.5
Tc = 130 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
250
A
Tstg
Storage temperature range
-65 to + 175
°C
175
°C
T (1)
Maximum operating junction temperature
j
dPtot
--------------dTj
1.
Parameter
<
1
-------------------------Rth (j – a )
condition to avoid thermal runaway for a diode on its own heatsink.
Table 3. Thermal resistance
Symbol
Rth(j-c)
Parameter
Value (max)
Unit
1.6
°C/W
Junction to case
Table 4. Static electrical characteristics (anode terminals short-circuited)
Symbol
Parameter
Test conditions
Tj = 25 °C
IR
(1)
Reverse leakage current
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Min.
Typ.
Max.
Unit
-
-
150
µA
-
8
16
-
-
9
-
-
0.475
-
0.39
0.43
-
-
0.585
-
0.50
0.545
mA
VR = 70 V
IF = 5 A
IF = 10A
V
-
IF = 30 A
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.56 x IF(AV) + 0.005 IF2(RMS)
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FERD30SM100S
Characteristics
Figure 1. Average forward power dissipation
versus average forward current
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Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
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Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
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Figure 4. Reverse leakage current versus
reverse voltage applied (typical values)
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Figure 5. Junction capacitance versus reverse
voltage applied (typical values)
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Figure 6. Forward voltage drop versus forward
current (typical values)
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Package information
2
FERD30SM100S
Package information
•
Epoxy meets UL94, V0
•
Cooling method: by conduction (C)
•
Recommended torque value: 0.55 N·m
•
Maximum torque value: 0.77 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 7. TO-220AB dimension definitions
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FERD30SM100S
Package information
Table 5. TO-220AB dimension values
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.17
0.18
b
0.61
0.88
0.024
0.035
b1
1.14
1.70
0.045
0.067
c
0.48
0.70
0.019
0.027
D
15.25
15.75
0.60
0.62
D1
1.27 typ.
0.05 typ.
E
10
10.40
0.39
0.41
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.19
0.20
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.24
0.26
J1
2.40
2.72
0.094
0.107
L
13
14
0.51
0.55
L1
3.50
3.93
0.137
0.154
L20
16.40 typ.
0.64 typ.
L30
28.90 typ.
1.13 typ.
∅P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
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Ordering information
3
FERD30SM100S
Ordering information
Table 6. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
FERD30SM100ST
FERD30SM100ST
TO-220AB
1.9 g
50
Tube
Revision history
Table 7. Document revision history
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Date
Revision
12-Jan-2015
1
Changes
Initial release.
DocID027344 Rev 1
FERD30SM100S
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
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