GB3NB60KD

STGP3NB60KD - STGP3NB60KDFP STGB3NB60KD N-CHANNEL 6A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP3NB60KD STGP3NB60KDFP STGB3NB60KD s s s s s s s VCES 600 V 600 V 600 V VCE(sat) (Max) @ 25°C < 2.8 V < 2.8 V < 2.8 V IC (#) @100°C 6A 6A 6A 3 1 2 1 2 3 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED TO-220 TO-220FP 3 1 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES ORDERING INFORMATION SALES TYPE STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL March 2004 1/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 D2PAK VCES VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#) Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C. Storage Temperature Max. Operating Junction Temperature 50 0.4 -– 55 to 150 150 600 20 ±20 10 6 24 25 0.2 2500 Value TO-220FP V V V A A A W W/°C V °C °C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.5 62.5 TO-220FP 5 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 VCE = VGE, IC = 250µA VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125°C 5 2.3 1.9 Min. 600 50 500 ±100 7 2.8 Typ. Max. Unit V µA µA nA V V V 2/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD SWITCHING PARAMETERS Symbol gfs (1) Cies Coes Cres Qg Qge Qgc tscw td(on) tr (di/dt)on Eon tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Test Conditions VCE = 25V, Ic = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 2.4 220 50 5.8 14 3.3 7.5 10 14 5 520 30 90 20 33 100 58 85 190 54 90 130 111 195 18 Max. Unit S pF pF pF nC nC nC µs ns ns A/µs µJ ns ns ns ns µJ µJ ns ns ns ns µJ µJ VCE = 480V, IC = 3 A, VGE = 15V Vce = 0.5 VBR(CES), VGE=15V, Tj = 125°C , RG = 10 Ω VCC = 480 V, IC = 3 A RG = 10Ω, VGE = 15 V VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 25 °C Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current Pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A If = 1.5 A, Tj = 125 °C If = 3 A ,VR = 35 V, Tj =125°C, di/dt = 100A/µs 1.2 0.95 45 70 2.7 Test Conditions Min. Typ. Max. 3 24 1.8 Unit A A V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (**)Losses include Also the Tail (Jedec Standardization) (#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, IC) 3/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Emitter-collector Diode Characteristics 5/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Turn-Off SOA Thermal Impedance for TO-220FP Thermal Impedance for TO-220 / D2PAK 6/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 øP Q 8/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 9/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 8º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/12 3 1 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 BASE QTY 1000 * on sales type 11/12 STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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