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L6206D

L6206D

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC24_300MIL

  • 描述:

    Half Bridge (4) Driver DC Motors, Stepper Motors, Voltage Regulators BCDMOS 24-SO

  • 数据手册
  • 价格&库存
L6206D 数据手册
L6206 DMOS dual full bridge driver Datasheet - production data  Thermal shutdown  Undervoltage lockout  Integrated fast freewheeling diodes Applications  Bipolar stepper motor  Dual or quad DC motor 3RZHU62 Description The L6206 device is a DMOS dual full bridge designed for motor control applications, realized in BCD technology, which combines isolated DMOS power transistors with CMOS and bipolar circuits on the same chip. Available in the PowerSO36 and SO24 (20 + 2 + 2) packages, the L6206 device features thermal shutdown and a non-dissipative overcurrent detection on the highside power MOSFETs plus a diagnostic output that can be easily used to implement the overcurrent protection. 62  2UGHULQJQXPEHUV /1 3RZHU',3 /3' 3RZHU62 /' 62 Features  Operating supply voltage from 8 to 52 V  5.6 A output peak current (2.8 A DC)  RDS(ON) 0.3  typ. value at Tj = 25 °C  Operating frequency up to 100 KHz  Programmable high-side overcurrent detection and protection  Diagnostic output  Paralleled operation  Cross conduction protection October 2018 This is information on a product in full production. DocID07617 Rev 4 1/29 www.st.com Contents L6206 Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 7 8 2/29 5.1 Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5.2 Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.3 Non-dissipative overcurrent detection and protection . . . . . . . . . . . . . . . 13 5.4 Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.1 Paralleled operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.2 Output current capability and IC power dissipation . . . . . . . . . . . . . . . . . 21 6.3 Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 7.1 PowerSO36 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 7.2 SO24 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 DocID07617 Rev 4 L6206 1 Block diagram Block diagram Figure 1. Block diagram 9%227 9%227 9%227 9&3 9%227 352*&/$ 2&'$ 2&'$ 29(5 &855(17 '(7(&7,21 287$ 9 7+(50$/ 3527(&7,21 9 287$ *$7( /2*,& (1$ ,1$ 6(16($ ,1$ 92/7$*( 5(*8/$725 9 9 %5,'*($ 2&'% 2&'% 29(5 &855(17 '(7(&7,21 96% 352*&/% (1% 96$ &+$5*( 3803 287% 287% *$7( /2*,& 6(16(% ,1% ,1% %5,'*(% ',1$9 DocID07617 Rev 4 3/29 29 Maximum ratings 2 L6206 Maximum ratings Table 1. Absolute maximum ratings Symbol VS VOD Parameter Supply voltage Differential voltage between VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSEB Test conditions Value Unit VSA = VSB = VS 60 V VSA = VSB = VS = 60 V; VSENSEA = VSENSEB = GND 60 V - -0.3 to +10 V - -0.3 to +7 V VSA = VSB = VS VS + 10 V OCDA,OCDB OCD pins voltage range PROGCLA, PROGCLB VBOOT PROGCL pins voltage range Bootstrap peak voltage VIN, VEN Input and enable voltage range - -0.3 to +7 V VSENSEA, VSENSEB Voltage range at pins SENSEA and SENSEB - -1 to +4 V Pulsed supply current (for each VS pin), internally limited by the overcurrent protection VSA = VSB = VS; tPULSE < 1 ms 7.1 A RMS supply current (for each VS pin) VSA = VSB = VS 2.8 A - -40 to 150 C IS(peak) IS Tstg, TOP Storage and operating temperature range Table 2. Recommended operating conditions Symbol VS Parameter Supply voltage Test conditions Min. Max. Unit VSA = VSB = VS 8 52 V VOD Differential voltage between VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSEB VSA = VSB = VS; VSENSEA = VSENSEB - 52 V VSENSEA, VSENSEB Voltage range at pins SENSEA and SENSEB (pulsed tW < trr) (DC) -6 -1 6 1 V V 4/29 IOUT RMS output current - - 2.8 A fsw Switching frequency - - 100 KHz DocID07617 Rev 4 L6206 Maximum ratings Table 3. Thermal data Symbol Description Rth-j-pins Maximum thermal resistance junction pins Rth-j-case Maximum thermal resistance junction case (1) SO24 PowerSO36 Unit 14 - C/W - 1 C/W 51 - C/W Rth-j-amb1 Maximum thermal resistance junction ambient Rth-j-amb1 Maximum thermal resistance junction ambient(2) - 35 C/W Rth-j-amb1 Maximum thermal resistance junction ambient (3) - 15 C/W Maximum thermal resistance junction ambient (4) 77 62 C/W Rth-j-amb2 1. Mounted on a multilayer FR4 PCB with a dissipating copper surface on the bottom side of 6 cm2 (with a thickness of 35 µm). 2. Mounted on a multilayer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm). 3. Mounted on a multilayer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm), 16 via holes and a ground layer. 4. Mounted on a multilayer FR4 PCB without any heatsinking surface on the board. DocID07617 Rev 4 5/29 29 Pin connections 3 L6206 Pin connections Figure 2. Pin connections (top view) GND 1 36 GND N.C. 2 35 N.C. N.C. 3 34 N.C. VSA 4 33 VSB OUT2A 5 32 OUT2B N.C. 6 31 N.C. VCP 7 30 VBOOT ENA 8 29 ENB PROGCLA IN1A 1 24 PROGCLA IN2A 2 23 ENA SENSEA 3 22 VCP OCDA 4 21 OUT2A OUT1A 5 20 VSA 9 28 PROGCLB GND 6 19 GND IN1A 10 27 IN2B GND 7 18 GND IN2A 11 26 IN1B OUT1B 8 17 VSB SENSEA 12 25 SENSEB 13 24 OCDB 9 16 OUT2B OCDA OCDB N.C. 14 23 N.C. SENSEB 10 15 VBOOT OUT1A 15 22 OUT1B IN1B 11 14 ENB N.C. 16 21 N.C. IN2B 12 13 PROGCLB N.C. 17 20 N.C. GND 18 19 GND D99IN1089A D99IN1090A PowerSO36(1) SO24 1. The slug is internally connected to pins 1, 18, 19 and 36 (GND pins). Table 4. Pin description Package 6/29 SO24 PowerSO36 Name Type Function Pin no. Pin no. 1 10 IN1A Logic input Bridge A logic input 1. 2 11 IN2A Logic input Bridge A logic input 2. 3 12 SENSEA Power supply Bridge A source pin. This pin must be connected to power ground directly or through a sensing power resistor. Bridge A overcurrent detection and thermal protection pin. An internal open drain transistor pulls to GND when overcurrent on bridge A is detected or in case of thermal protection. 4 13 OCDA Open drain output 5 15 OUT1A Power output Bridge A output 1. 6, 7, 18, 19 1, 18, 19, 36 GND GND Signal ground terminals. In SO packages, these pins are also used for heat dissipation toward the PCB. 8 22 OUT1B Power output Bridge B output 1. DocID07617 Rev 4 L6206 Pin connections Table 4. Pin description (continued) Package SO24 PowerSO36 Pin no. Pin no. Name Type Function Bridge B overcurrent detection and thermal protection pin. An internal open drain transistor pulls to GND when overcurrent on bridge B is detected or in case of thermal protection. 9 24 OCDB Open drain output 10 25 SENSEB Power supply Bridge B source pin. This pin must be connected to power ground directly or through a sensing power resistor. 11 26 IN1B Logic input Bridge B input 1 12 27 IN2B Logic input Bridge B input 2 13 28 PROGCLB R pin Bridge B overcurrent level programming. A resistor connected between this pin and ground sets the programmable current limiting value for the bridge B. By connecting this pin to ground the maximum current is set. This pin cannot be left non-connected. 14 29 ENB Logic input Bridge B Enable. LOW logic level switches OFF all power MOSFETs of Bridge B. If not used, it has to be connected to +5 V. 15 30 VBOOT Supply voltage Bootstrap voltage needed for driving the upper power MOSFETs of both bridge A and bridge B. 16 32 OUT2B Power output Bridge B output 2. 17 33 VSB Bridge B power supply voltage. It must be Power supply connected to the supply voltage together with pin VSA. 20 4 VSA Bridge A power supply voltage. It must be Power supply connected to the supply voltage together with pin VSB. 21 5 OUT2A Power output Bridge A output 2. 22 7 VCP Output Charge pump oscillator output. 23 8 ENA Logic input Bridge A enable. LOW logic level switches OFF all power MOSFETs of bridge A. If not used, it has to be connected to +5 V. R pin Bridge A overcurrent level programming. A resistor connected between this pin and ground sets the programmable current limiting value for the bridge A. By connecting this pin to ground the maximum current is set. This pin cannot be left non-connected. 24 9 PROGCLA DocID07617 Rev 4 7/29 29 Electrical characteristics 4 L6206 Electrical characteristics Table 5. Electrical characteristics (Tamb = 25 °C, Vs = 48 V, unless otherwise specified) Symbol Test conditions Min. Typ. Max. Unit Turn-on threshold - 6.6 7 7.4 V VSth(OFF) Turn-off threshold - 5.6 6 6.4 V All bridges OFF; Tj = -25 °C to 125 °C(1) - 5 10 mA - - 165 - C - 0.34 0.4  - 0.53 0.59  Tj = 25 °C - 0.28 0.34  Tj = 125 °C(1) - 0.47 0.53  EN = low; OUT = VS - - 2 mA EN = low; OUT = GND -0.15 - - mA ISD = 2.8 A, EN = low - 1.15 1.3 V VSth(ON) IS Tj(OFF) Parameter Quiescent supply current Thermal shutdown temperature Output DMOS transistors High-side switch ON resistance RDS(ON) Low-side switch ON resistance IDSS Leakage current Tj = 25 °C Tj = 125 °C(1) Source drain diodes VSD Forward ON voltage trr Reverse recovery time If = 2.8 A - 300 - ns tfr Forward recovery time - - 200 - ns Logic input VIL Low level logic input voltage - -0.3 - 0.8 V VIH High level logic input voltage - 2 - 7 V IIL Low level logic input current GND logic input voltage -10 - - µA IIH High level logic input current 7 V logic input voltage - - 10 µA Vth(ON) Turn-on input threshold - - 1.8 2.0 V Vth(OFF) Turn-off input threshold - 0.8 1.3 - V Vth(HYS) Input threshold hysteresis - 0.25 0.5 - V Switching characteristics tD(on)EN Enable to out turn ON delay time(2) ILOAD = 2.8 A, resistive load 100 250 400 ns tD(on)IN Input to out turn ON delay time ILOAD = 2.8 A, resistive load (deadtime included) - 1.6 - µs Output rise time(2) ILOAD = 2.8 A, resistive load 40 - 250 ns tD(off)EN Enable to out turn OFF delay time(2) ILOAD = 2.8 A, resistive load 300 550 800 ns tD(off)IN Input to out turn OFF delay time ILOAD = 2.8 A, resistive load - 600 - ns tFALL (2) ILOAD = 2.8 A, resistive load 40 - 250 ns tRISE 8/29 Output fall time DocID07617 Rev 4 L6206 Electrical characteristics Table 5. Electrical characteristics (Tamb = 25 °C, Vs = 48 V, unless otherwise specified) (continued) Symbol Parameter tdt Deadtime protection fCP Charge pump frequency Test conditions Min. Typ. Max. Unit - 0.5 1 - µs -25 °C < Tj < 125 °C - 0.6 1 MHz 0.57 4.42 5.6 +10% +10% +30% A A A Overcurrent detection Is over Input supply overcurrent detection threshold ROPDR Open drain ON resistance tOCD(ON) I = 4 mA - 40 60  (3) I = 4 mA; CEN < 100 pF - 200 - ns time(3) I = 4 mA; CEN < 100 pF - 100 - ns OCD turn-on delay time tOCD(OFF) OCD turn-off delay -25 °C < Tj < 125 °C; RCL = 39 k -10% -25 °C < Tj < 125 °C; RCL = 5 k -10% -25 °C $@        5 & /> @ $0 DocID07617 Rev 4 15/29 29 Circuit description L6206 Figure 12. tDISABLE versus CEN and REN (VDD = 5 V) 5(1  W ',6$%/( >—V@      5(1   N 5(1   5(1   5(1          &(1 >Q ) @ $0 Figure 13. tDELAY versus CEN (VDD = 5 V) W '(/$< >PV@        &(1 >Q)@ $0 5.4 Thermal protection In addition to the overcurrent detection, the L6206 device integrates a thermal protection for preventing the device destruction in case of junction overtemperature. It works sensing the die temperature by means of a sensible element integrated in the die. The device switchesoff when the junction temperature reaches 165 °C (typ. value) with 15 °C hysteresis (typ. value). 16/29 DocID07617 Rev 4 L6206 6 Application information Application information A typical application using the L6206 device is shown in Figure 14. Typical component values for the application are shown in Table 8. A high quality ceramic capacitor in the range of 100 to 200 nF should be placed between the power pins (VSA and VSB) and ground near the L6206 device to improve the high frequency filtering on the power supply and reduce high frequency transients generated by the switching. The capacitors connected from the ENA/OCDA and ENB/OCDB nodes to ground set the shutdown time for the bridge A and bridge B respectively when an overcurrent is detected (see Section 5.3: Non-dissipative overcurrent detection and protection on page 13). The two current sources (SENSEA and SENSEB) should be connected to power ground with a trace length as short as possible in the layout. To increase noise immunity, unused logic pins are best connected to 5 V (high logic level) or GND (low logic level) (see Table 4: Pin description on page 6). It is recommended to keep power ground and signal ground separated on the PCB. Table 8. Component values for typical application Component Value Component Value C1 100 F D1 1N4148 C2 100 nF D2 1N4148 CBOOT 220 nF RCLA 5 K CP 10 nF RCLB 5 K CENA 5.6 nF RENA 100 k CENB 5.6 nF RENB 100 k Figure 14. Typical application (with reference to 24-pin packages) */7 DocID07617 Rev 4 17/29 29 Application information 6.1 L6206 Paralleled operation The outputs of the L6206 device can be paralleled to increase the output current capability or reduce the power dissipation in the device at a given current level. It must be noted, however, that the internal wire bond connections from the die to the power or sense pins of the package must carry current in both of the associated half-bridges. When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak current rating is not increased since the total current must still flow through one bond wire on the power supply or sense pin. In addition the overcurrent detection senses the sum of the current in the upper devices of each bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the overcurrent detection threshold. For most applications the recommended configuration is half-bridge 1 of bridge A paralleled with the half-bridge 1 of the bridge B, and the same for the half-bridges 2 as shown in Figure 15. The current in the two devices connected in parallel will share very well since the RDS(ON) of the devices on the same die is well matched. When connected in this configuration the overcurrent detection circuit, which senses the current in each bridge (A and B), will sense the current in upper devices connected in parallel independently and the sense circuit with the lowest threshold will trip first. With the enables connected in parallel, the first detection of an overcurrent in either upper DMOS device will turn of both bridges. Assuming that the two DMOS devices share the current equally, the resulting overcurrent detection threshold will be twice the minimum threshold set by the resistors RCLA or RCLB in Figure 15. It is recommended to use RCLA = RCLB. In this configuration the resulting bridge has the following characteristics:  Equivalent device: full bridge  RDS(ON) 0.15  typ. value at TJ = 25 °C  5.6 A max. RMS load current  11.2 A max. OCD threshold Figure 15. Parallel connection for higher current (with reference to 24-pin packages)  96 9'& 96$ & 32:(5 *5281'  6,*1$/ *5281' 96% &    ' &%227 53 ' 9&3  &3 9%227 6(16($ 6(16(% 287$ 287$ /2$'  287% 287% *1' *1' *1' *1'   2&'% (1% 2&'$ (1$    ,1$ ,1 ,1$         ,1% 352*&/$  352*&/% 5&/%  DocID07617 Rev 4 ,1 5&/$   ,1% ',19 18/29 (1 &(1   5(1 L6206 Application information To operate the device in parallel and maintain a lower overcurrent threshold, half-bridge 1 and the half-bridge 2 of the bridge A can be connected in parallel and the same done for the bridge B as shown in Figure 16. In this configuration, the peak current for each half-bridge is still limited by the bond wires for the supply and sense pins so the dissipation in the device will be reduced, but the peak current rating is not increased. When connected in this configuration the overcurrent detection circuit, senses the sum of the current in upper devices connected in parallel. With the enables connected in parallel, an overcurrent will turn of both bridges. Since the circuit senses the total current in the upper devices, the overcurrent threshold is equal to the threshold set the resistor RCLA or RCLB in Figure 16. RCLA sets the threshold when outputs OUT1A and OUT2A are high and resistor RCLB sets the threshold when outputs OUT1B and OUT2B are high. It is recommended to use RCLA = RCLB. In this configuration, the resulting bridge has the following characteristics:  Equivalent device: full bridge  RDS(ON) 0.15  typ. value at TJ = 25 °C  2.8 A max. RMS load current  5.6 A max. OCD threshold Figure 16. Parallel connection with lower overcurrent threshold (with reference to 24-pin packages)  96 9'& 96$ & 32:(5 *5281'  6,*1$/ *5281' 96% & 53 ' 9&3  &3 9%227 6(16($ 6(16(% 287$ 287$ /2$'    ' &%227  287% 287% *1' *1' *1' *1'   2&'$ (1$ 2&'% (1%  5(1 (1 &(1             ,1$ ,1$ ,1% ,1% ,1% 352*&/$ 5&/$   ,1$  352*&/% 5&/%  ',19 DocID07617 Rev 4 19/29 29 Application information L6206 It is also possible to parallel the four half-bridges to obtain a simple half-bridge as shown in Figure 17. In this configuration the overcurrent threshold is equal to twice the minimum threshold set by the resistors RCLA or RCLB in Figure 17. It is recommended to use RCLA = RCLB. The resulting half-bridge has the following characteristics:  Equivalent device: half-bridge  RDS(ON) 0.075. typ. value at TJ = 25 °C  5.6 A max. RMS load current  11.2 A max. OCD threshold Figure 17. Paralleling the four half-bridges (with reference to 24-pin packages)  96 9'& 96$ & 96% & 32:(5 *5281'  6,*1$/ *5281' ' &%227 53 ' 9&3   &3 9%227 6(16($ 6(16(% 287$ 287$ /2$' 287% 287% *1' *1' *1' *1' 20/29      2&'$ (1$ 2&'% (1%  5(1 (1 &(1             ,1$ ,1% 352*&/$  352*&/% 5&/%  DocID07617 Rev 4 ,1 ,1% 5&/$   ,1$ ',19 L6206 6.2 Application information Output current capability and IC power dissipation In Figure 18 and Figure 19 are shown the approximate relation between the output current and the IC power dissipation using PWM current control driving two loads, for two different driving types:  One full bridge ON at a time (Figure 18) in which only one load at a time is energized.  Two full bridges ON at the same time (Figure 19) in which two loads at the same time are energized. For a given output current and driving type the power dissipated by the IC can be easily evaluated, in order to establish which package should be used and how large must be the on-board copper dissipating area to guarantee a safe operating junction temperature (125 °C maximum). Figure 18. IC power dissipation versus output current with one full bridge ON at a time 21()8//%5,'*(21$7$7,0( ,$   , 287 ,%  3'>:@ , 287  7HVWFRQGLWLRQV 6XSSO\YROWDJH 9         1R3:0 I6: N+] VORZGHFD\  , 287>$@ $0 Figure 19. IC power dissipation versus output current with two full bridges ON at the same time 7:2)8//%5,'*(621$77+(6$0(7,0(   ,$ , 287 ,%  , 287 3'>: @  7HVWFRQGLWLRQV 6XSSO\YROWDJH 9          1R3:0 I 6: N+] VORZGHFD\ , 287 >$ @ $0 DocID07617 Rev 4 21/29 29 Application information 6.3 L6206 Thermal management In most applications the power dissipation in the IC is the main factor that sets the maximum current that can be delivered by the device in a safe operating condition. Therefore, it has to be taken into account very carefully. Besides the available space on the PCB, the right package should be chosen considering the power dissipation. Heatsinking can be achieved using copper on the PCB with proper area and thickness. Figure 21 and 22 show the junction to ambient thermal resistance values for the PowerSO36 and SO24 packages. For instance, using a PowerSO package with a copper slug soldered on a 1.5 mm copper thickness FR4 board with a 6 cm2 dissipating footprint (copper thickness of 35 µm), the Rth j-amb is about 35 °C/W. Figure 20 shows mounting methods for this package. Using a multilayer board with vias to a ground plane, thermal impedance can be reduced down to 15 °C/W. Figure 20. Mounting the PowerSO package Slug soldered to PCB with dissipating area Slug soldered to PCB with dissipating area plus ground layer Slug soldered to PCB with dissipating area plus ground layer contacted through via holes Figure 21. PowerSO36 junction ambient thermal resistance versus on-board copper area ž &:    :LWKRXWJURXQGOD\HU  :LWKJURXQGOD\HU  :LWKJURXQGOD\HU YLDKROHV 2QERDUGFRSSHUDUHD                V T  FP $0 22/29 DocID07617 Rev 4 L6206 Application information Figure 22. SO24 junction ambient thermal resistance versus on-board copper area ž &: 2QERDUGFRSSHUDUHD     &RSSHUDUHD LVRQWRSVLGH                    V T  FP $0 DocID07617 Rev 4 23/29 29 Application information L6206 Figure 23. Typical quiescent current vs. supply Figure 24. Typical high-side RDS(ON) vs. supply voltage voltage Iq [m A] RDS(ON) [] 5.6 fsw = 1 kHz 0.380 Tj = 25 °C 0.376 Tj = 85 °C 5.4 0.372 Tj = 25 °C 0.368 0.364 5.2 0.360 Tj = 125 °C 0.356 5.0 0.352 0.348 4.8 0.344 0.340 0.336 4.6 0 10 20 30 V S [V] 40 50 0 60 5 10 15 20 25 30 VS [V] Figure 25. Normalized typical quiescent current vs. switching frequency Figure 26. Normalized RDS(ON) vs.junction temperature (typical value) R DS(ON) / (RDS(ON) @ 25 °C) Iq / (Iq @ 1 kHz) 1.8 1.7 1.6 1.6 1.5 1.4 1.4 1.3 1.2 1.2 1.0 1.1 1.0 0.8 0 0.9 0 20 40 60 80 20 40 60 80 100 120 140 Tj [°C] 100 fSW [kHz] Figure 27. Typical low-side RDS(ON) vs. supply voltage R DS(ON) [] ISD [A] 0.300 3.0 Tj = 25 °C 0.296 2.5 Tj = 25 °C 0.292 2.0 0.288 1.5 0.284 1.0 0.280 0.5 0.276 0 24/29 Figure 28. Typical drain-source diode forward ON characteristic 5 10 15 V S [V] 20 25 30 0.0 700 800 900 1000 VSD [mV] DocID07617 Rev 4 1100 1200 1300 L6206 7 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 7.1 PowerSO36 package information Figure 29. PowerSO36 package outline 1 1 D H $ '(7$,/ $ $ F D '(7$,/ % ( H + '(7$,/ $ OHDG ' VOXJ D  %277209,(:  ( % ( ( ' '(7$,/ %    *DJH3ODQH  &  6 K[€ E / 6($7,1*3/$1( * †  0 $% 3620(& & &23/$1$5,7<   DocID07617 Rev 4 25/29 29 Package information L6206 Table 9. PowerSO36 package mechanical data Dimensions (mm) Dimensions (inch) Symbol Min. Typ. Max. Min. Typ. Max. A - - 3.60 - - 0.141 a1 0.10 - 0.30 0.004 - 0.012 a2 - - 3.30 - - 0.130 a3 0 - 0.10 0 - 0.004 b 0.22 - 0.38 0.008 - 0.015 c 0.23 - 0.32 0.009 - 0.012 D(1) 15.80 - 16.00 0.622 - 0.630 D1 9.40 - 9.80 0.370 - 0.385 E 13.90 - 14.50 0.547 - 0.570 e - 0.65 - - 0.0256 - e3 - 11.05 - - 0.435 - 10.90 - 11.10 0.429 - 0.437 E2 - - 2.90 - - 0.114 E3 5.80 - 6.20 0.228 - 0.244 E4 2.90 - 3.20 0.114 - 0.126 G 0 - 0.10 0 - 0.004 H 15.50 - 15.90 0.610 - 0.626 h - - 1.10 - - 0.043 L 0.80 - 1.10 0.031 - 0.043 (1) E1 N 10° (max.) S 8° (max.) 1. “D” and “E1” do not include mold flash or protrusions. - Mold flash or protrusions shall not exceed 0.15 mm (0.006 inch). - Critical dimensions are “a3”, “E” and “G”. 26/29 DocID07617 Rev 4 L6206 7.2 Package information SO24 package information Figure 30. SO24 package outline  & Table 10. SO24 package mechanical data Dimensions (mm) Dimensions (inch) Symbol Min. Typ. Max. Min. Typ. Max. A 2.35 - 2.65 0.093 - 0.104 A1 0.10 - 0.30 0.004 - 0.012 B 0.33 - 0.51 0.013 - 0.020 C 0.23 - 0.32 0.009 - 0.013 D(1) 15.20 - 15.60 0.598 - 0.614 E 7.40 - 7.60 0.291 - 0.299 e - 1.27 - - 0.050 - H 10.0 - 10.65 0.394 - 0.419 h 0.25 - 0.75 0.010 - 0.030 L 0.40 - 1.27 0.016 - 0.050 - 0.004 k ddd 0° (min.), 8° (max.) - - 0.10 - 1. “D” dimension does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side. DocID07617 Rev 4 27/29 29 Revision history 8 L6206 Revision history Table 11. Document revision history Date Revision 03-Sep-2003 1 Initial release. 2 Updated Section : Description on page 1 (removed “MultiPower-” from “MultiPower-BCD technology”). Added Contents on page 2. Updated Section 1: Block diagram (added section title, numbered and moved Figure 1: Block diagram from page 1 to page 3). Added title to Section 2: Maximum ratings on page 4, added numbers and titles from Table 1: Absolute maximum ratings to Table 3: Thermal data. Added title to Section 3: Pin connections on page 6, added number and title to Figure 2: Pin connections (top view), renumbered note 1 below Figure 2, added title to Table 4: Pin description. Added title to Section 4: Electrical characteristics on page 8, added title and number to Table 5, renumbered notes 1 to 3 below Table 5. Renumbered Figure 3 and Figure 4. Added section numbers to Section 5: Circuit description on page 11, Section 5.1 to Section 5.4. Removed “and uC” from first sentence in Section 5.2. Renumbered Table 6 and Table 7, added header to Table 6. Renumbered Figure 5 to Figure 13. . Added section numbers to Section 6: Application information on page 17, Section 6.1 to Section 6.3. Renumbered Table 8, added header to Table 8. Renumbered Figure 14 to Figure 29. Updated Section 7: Package information on page 26 (added main title and ECOPACK text. Added titles from Table 9: PowerSO36 package mechanical data to Table 11: SO24 package mechanical data and from Figure 30: PowerSO36 package outline to Figure 32: SO24 package outline, reversed order of named tables and figures. Removed 3D figures of packages, replaced 0.200 by 0.020 inch of max. B value in Table 11). Added cross-references throughout document. Added Section 8: Revision history and Table 12. Minor modifications throughout document. 13-Mar-2017 3 Updated Table 8 on page 17 (removed CREF row). Updated Figure 14 on page 17 (replaced by new figure and title). Updated Figure 15 on page 18, Figure 16 on page 19, and Figure 17 on page 20 [added “(with reference to 24-pin packages)” to titles]. Minor modifications throughout document. 03-Oct-2018 4 Removed PowerDIP24 package from the whole document. Removed “Tj“ from Table 2 on page 4. Minor modifications throughout document. 24-Feb-2014 28/29 Changes DocID07617 Rev 4 L6206 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DocID07617 Rev 4 29/29 29
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