MJE210

MJE210 ® SILICON PNP TRANSISTOR ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) -40 V V CEO Collector-Emitter Voltage (I B = 0) -25 V V EBO Base-Emitter Voltage (I C = 0) -8 V Collector Current -5 A IC I CM IB P tot T stg Tj Parameter Collector Peak Current (t p < 5 ms) -10 A Base Current -1 A Total Power Dissipation at T case ≤ 25 o C o at T amb ≤ 25 C Storage Temperature 15 1.5 Max Operating Junction Temperature September 2003 W -65 to 150 o C 150 o C 1/4 MJE210 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max o 83.4 8.34 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = -40 V V CB = -40 V I EBO Emitter Cut-off Current (I C = 0) V EB = -8 V Min. T case = 125 o C Typ. Max. Unit -100 -100 nA µA -100 nA ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Collector-Emitter V CEO(sus) ∗ Sustaining Voltage (I B = 0) I C = -10 mA -25 -0.3 -0.75 -1.8 V CE(sat) ∗ Collector-Emitter Sustaining Voltage I C = -0.5 A I C = -2 A I C = -5 A V BE(sat) ∗ Base-Emitter on Voltage I C = -5 A I B = -1 A V BE ∗ Base-Emitter on Voltage I C =- 2 A V CE = -1 V DC Current Gain I C = -0.5 A I C = -2 A I C = -5 A V CE = -1 V V CE = -1 V V CE = -2 V 70 45 10 Transistor Frequency I C = 0.1 A f = 10 MHz V CE = 10 V 65 Collector-base Capacitance V CB = -10 V h FE ∗ fT C CBO ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5% 2/4 I B = -50 mA I B = -0.2 A I B = -1 A IE = 0 f = 0.1 MHz V -2.5 -1.6 V V V V V 180 MHz 120 pF MJE210 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 7.4 7.8 0.291 TYP. MAX. 0.307 B 10.5 10.8 0.413 0.425 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 I 1.27 0.084 0.05 O 0.3 0.011 V 10o 10o 1: Base 2: Collector 3: Emitter 0016114/B 3/4 MJE210 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4