SCTH40N120G2V7AG

SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package Features TAB 7 1 H 2PAK-7 • • • • Order code VDS RDS(on) max. ID SCTH40N120G2V7AG 1200 V 105 mΩ 33 A AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency Drain (TAB) Applications • • • Gate (1) Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH40N120G2V7AG Product summary Order code SCTH40N120G2V7AG Marking 40N120AG Package H²PAK-7 Packing Tape and reel DS12969 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTH40N120G2V7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 1200 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 Gate-source voltage (pulsed, tp = 25 ns repetitive overshoot during switching for an accumulated time of 10 h) -11 to 25 V Drain current (continuous) at TC = 25 °C 33 Drain current (continuous) at TC = 100 °C 23 IDM(1) Drain current (pulsed) 92 A PTOT Total power dissipation at TC = 25 °C 250 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 175 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS12969 - Rev 3 Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.6 °C/W RthJA Thermal resistance, junction-to-ambient 50 °C/W page 2/14 SCTH40N120G2V7AG Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1200 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance Min. Typ. Max. 1200 Unit V 10 µA ±100 nA 3.2 5.0 V VGS = 18 V, ID = 20 A 75 105 VGS = 18 V, ID = 20 A, TJ = 175 °C 167 1.9 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 1230 - pF - 56 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 15 - pF Qg Total gate charge - 63 - nC Qgs Gate-source charge - 15 - nC Qgd Gate-drain charge - 20 - nC Rg Gate input resistance - 1 - Ω Min. Typ. Max. Unit VDS = 800 V, f = 1 MHz, VGS = 0 V VDD = 800 V, VGS = -5 to 18 V, ID = 20 A f = 1 MHz, ID = 0 A Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 20 A, - 235 - µJ Eoff Turn-off switching energy RG = 4.7 Ω, VGS = -5 V to 18 V - 77 - µJ Min. Typ. Max. Unit - 11 - Table 6. Switching times Symbol td(on) tf td(off) tr DS12969 - Rev 3 Parameter Test conditions Turn-on delay time Rise time VDD = 800 V, ID = 20 A, - 5 - Turn-off delay time RG = 4.7 Ω, VGS = -5 to 18 V - 18 - - 13 - Fall time ns page 3/14 SCTH40N120G2V7AG Electrical characteristics Table 7. Reverse SiC diode characteristics Symbol DS12969 - Rev 3 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions ISD = 20 A, VGS = 0 V ISD = 20 A, di/dt = 2000 A/μs, VDD = 800 V, VGS = -5 to 18 V Min. Typ. Max. Unit - 3.4 - V - 19 - ns - 132 - nC - 20 - A page 4/14 SCTH40N120G2V7AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) ZthJC (°C/W) GADG220320190916ZTH 4 duty=0.5 ) tp=1 µs DS (on O is pera lim tio ite n in db t y R his ar ea GADG250320191058SOA 101 tp=10 µs 10-1 RDS(on) max. 2 tp=100 µs 10-2 100 tp=1 ms TJ≤175 °C TC=25 °C single pulse 10-1 10-1 100 101 102 ID (A) VDS (V) 103 VGS = 18, 20 V 16V ton T 10-3 10-6 14V 10-5 10-4 10-3 10-2 VGS = 16, 18, 20 V tp (s) GADG041120201238OC25 14V 60 50 10-1 Figure 4. Output characteristics (TJ = 25 °C) ID (A) GADG091120200800OC-50 12V 50 12V 40 40 30 30 20 20 10V 10 0 0 RthJC = 0.6 °C/W duty = ton / T Single pulse tp=10 ms Figure 3. Output characteristics (TJ = -50 °C) 60 3 0.05 2 4 6 8 10 8V 12 VDS (V) 10 0 0 Figure 5. Output characteristics (TJ = 175 °C) ID (A) 2 60 6 8 VGS=12, 14, 16, 18, 20 V VGS=10 V 40 VGS=8 V 10 8V 6V 12 VDS (V) Figure 6. Transfer characteristics 80 30 4 ID (A) GADG220320190906OCH_175 50 10V GADG220320190908TCH VDS = 12 V 60 Tj = 25 °C Tj = 175 °C 40 20 20 10 0 0 DS12969 - Rev 3 Tj = -50 °C VGS=6 V 2 4 6 8 10 12 VDS (V) 0 2 4 6 8 10 12 14 16 18 VGS (V) page 5/14 SCTH40N120G2V7AG Electrical characteristics (curves) Figure 7. Total power dissipation PTOT (W) Figure 8. Gate charge vs gate-source voltage VGS (V) GADG220320190911PDT Tj = 175 °C 250 15 GADG220320190908QVG VDD = 800 V ID = 20 A 200 10 150 5 100 0 50 0 -75 -25 25 75 125 175 TC (°C) Figure 9. Capacitance variations C (pF) -5 0 10 20 30 40 50 60 Qg (nC) Figure 10. Switching energy vs drain current GADG220320190920SLC E Ets (μJ) VDD = 800 V, RG = 4.7 Ω VGS = -5 to 18 V 800 GADG220320190909CVR CISS 10 3 Eon 600 400 10 2 COSS f = 1 MHz 10 1 10 -1 CRSS 10 0 10 1 10 2 VDS (V) 10 3 Figure 11. Switching energy vs junction temperature GADG030420191206SLT E (μJ) VDD = 800 V, ID = 20 A, RG = 4.5 Ω 500 VGS = -5 to 18 V Ets Eon 400 Eoff 200 0 0 1.06 1.00 DS12969 - Rev 3 150 ID (A) GADG210320191453BDV ID = 1 mA 0.98 Eoff 100 40 1.04 200 50 30 V(BR)DSS (norm.) 1.02 0 0 20 Figure 12. Normalized V(BR)DSS vs temperature 300 100 10 TJ(°C) 0.96 -75 -25 25 75 125 175 TJ (°C) page 6/14 SCTH40N120G2V7AG Electrical characteristics (curves) Figure 13. Normalized gate threshold voltage vs temperature VGS(th) (norm.) Figure 14. Normalized on-resistance vs temperature RDS(on) (norm.) GADG210320191447VTH ID = 250 μA 1.4 GADG210320191446RON VGS = 18 V 2.2 1.2 1.8 1.0 1.4 0.8 1.0 0.6 0.4 -75 -25 25 75 125 175 0.6 -75 TJ (°C) -25 25 75 125 175 TJ (°C) Figure 15. Reverse conduction characteristics (TJ= -50 °C) Figure 16. Reverse conduction characteristics (TJ = 25 °C) ID (A) VGS = -5 V -20 ID (A) VGS = -5 V GADG260320191007SDF_-50 VGS = -3 V -20 -40 VGS = -3 V VGS = 0 V -40 VGS = 15 V -60 VGS = 5 V -5 -4 -3 -2 -1 VGS = 10 V VGS = 15 V -80 VGS = 0 V -6 VGS = 5 V -60 VGS = 10 V -80 -100 -7 GADG220320190904SDF_25 -100 -7 VDS (V) -6 -5 Tj = -50 °C -4 -3 -2 -1 VDS (V) Figure 17. Reverse conduction characteristics (TJ = 175 °C) ID (A) VGS = -5 V -20 GADG220320190902SDF_175 VGS = -3 V VGS = 0 V VGS = 5 V -40 VGS = 10 V VGS = 15 V -60 -80 -100 -7 DS12969 - Rev 3 -6 -5 -4 -3 -2 -1 VDS (V) page 7/14 SCTH40N120G2V7AG Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 H²PAK-7 package information Figure 18. H²PAK-7 package outline DM00249216_4 DS12969 - Rev 3 page 8/14 SCTH40N120G2V7AG H²PAK-7 package information Table 8. H²PAK-7 package mechanical data Dim. mm Min. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.60 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 M 1.90 2.50 R 0.20 0.60 V 0° 8° Figure 19. H²PAK-7 recommended footprint footprint_DM00249216_4 Note: DS12969 - Rev 3 Dimensions are in mm. page 9/14 SCTH40N120G2V7AG Packing information 3.2 Packing information Figure 20. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 21. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A Tape slot In core for Full radius DS12969 - Rev 3 Tape start G measured At hub page 10/14 SCTH40N120G2V7AG Packing information Table 9. Tape and reel mechanical data Tape Dim. DS12969 - Rev 3 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 11/14 SCTH40N120G2V7AG Revision history Table 10. Document revision history Date Version 01-Apr-2019 1 24-Jul-2020 2 Changes First release. Updated marking value in Product status / summary. Updated Table 3. On/off states and Table 7. Reverse SiC diode characteristics. Modified Features and Applications on cover page. Modified Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 3. On/off states, Table 5. Switching energy (inductive load), Table 6. Switching times and Table 7. Reverse SiC diode characteristics. 24-Nov-2021 3 Modified Figure 1. Safe operating area, Figure 2. Maximum transient thermal impedance, Figure 3. Output characteristics (TJ = -50 °C), Figure 4. Output characteristics (TJ = 25 °C), Figure 5. Output characteristics (TJ = 175 °C) and Figure 11. Switching energy vs junction temperature. Minor text changes. DS12969 - Rev 3 page 12/14 SCTH40N120G2V7AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12969 - Rev 3 page 13/14 SCTH40N120G2V7AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12969 - Rev 3 page 14/14