SCTH100N65G2-7AG

SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package Features TAB 7 1 H 2PAK-7 • • • • Order code VDS RDS(on) max. ID SCTH100N65G2-7AG 650 V 26 mΩ 95 A AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency Drain (TAB) Applications • • • Gate (1) Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH100N65G2-7AG Product summary Order code SCTH100N65G2-7AG Marking 100N65AG Package H²PAK-7 Packing Tape and reel DS12773 - Rev 2 - August 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTH100N65G2-7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operational values) -5 to 18 V Drain current (continuous) at TC = 25 °C 95 Drain current (continuous) at TC = 100 °C 65 IDM(1) Drain current (pulsed) 260 A PTOT Total power dissipation at TC = 25 °C 360 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 175 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS12773 - Rev 2 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.42 °C/W 50 °C/W page 2/14 SCTH100N65G2-7AG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance Min. Typ. Max. 650 Unit V 10 µA ±100 nA 3.1 5.0 V VGS = 18 V, ID = 50 A 20 26 VGS = 18 V, ID = 50 A, TJ = 175 °C 32 1.9 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 3315 - pF - 267 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 46 - pF Qg Total gate charge - 162 - nC Qgs Gate-source charge - 45 - nC Qgd Gate-drain charge - 49 - nC RG Gate input resistance - 1 - Ω Min. Typ. Max. Unit VDS = 520 V, f = 1 MHz, VGS = 0 V VDS = 520 V, VGS = -5 to 18 V, ID = 50 A f = 1 MHz, ID = 0 A Table 5. Switching energy Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 520 V, ID = 50 A, - 486 - µJ Eoff Turn-off switching energy RG = 10 Ω, VGS = -5 to 18 V - 506 - µJ Min. Typ. Max. Unit - 2.8 - V - 26 - 370 - nC - 24 - A Table 6. Reverse SiC diode characteristics Symbol DS12773 - Rev 2 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 2140 A/µs, VDD = 520 V, RG = 10 Ω, VGS = -5 to 18 V ns page 3/14 SCTH100N65G2-7AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) K GADG191120181526SOA GADG031020181127ZTH δ = 0.5 Operation in this area is limited by RDS(on) δ = 0.2 102 tp =10 µs 10-1 δ = 0.1 δ = 0.05 tp =100 µs 101 tp =1 ms δ = 0.02 δ = 0.01 10-2 tp =10 ms 100 Single pulse, TC = 25 °C, TJ = 175 °C 10-1 100 101 VDS (V) 102 Figure 3. Output characteristics (TJ = 25 °C) ID (A) VGS = 18, 20 V 10-3 10-6 10-5 10-4 JC 10-3 10-2 tp (s) 10-1 Figure 4. Output characteristics (TJ = 175 °C) GADG261120180955OCH_175 ID (A) VGS = 14, 16, 18, 20 V GIPG190920181009OCH_25 16V 14V 160 Single pulse 12V 160 12V 120 10V 120 10V 80 8V 80 40 40 6V 8V 0 0 6V 2 4 6 8 VDS (V) 0 0 Figure 5. Transfer characteristics ID (A) 160 2 4 6 GADG261120180955TCH PTOT (W) GADG261120180956PDT 360 VDS = 4 V 120 TJ = 175 °C 240 180 TJ = 175 °C TJ = 25 °C 120 40 0 0 DS12773 - Rev 2 VDS (V) Figure 6. Total power dissipation 300 80 8 60 4 8 12 16 VGS (V) 0 -75 -25 25 75 125 175 TC (°C) page 4/14 SCTH100N65G2-7AG Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VGS (V) GIPG021020181232QVG Figure 8. Capacitance variations C (pF) GIPG190920181024CVR VDD = 520 V ID = 50 A 16 Ciss 12 103 8 Coss 4 102 0 f = 1 MHz Crss -4 -8 0 30 60 90 120 150 Qg (nC) Figure 9. Switching energy vs drain current E (μJ) GADG190920181025SLC VDD = 520 V, RG = 10 Ω, VGS = -5 to 18 V 101 10-1 100 101 VDS (V) 102 Figure 10. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG260920181515BDV 1.06 Etot 2000 1.04 ID = 1 mA Eoff 1.02 1000 1.00 Eon 0.98 0 0 40 80 ID (A) Figure 11. Normalized gate threshold voltage VGS(th) (norm.) GADG260920181207VTH 1.4 0.96 -75 -25 25 75 125 175 Figure 12. Switching energy vs junction temperature E (µJ) GADG031020181415SLT Etot 1000 ID = 1 mA 1.2 TJ (°C) 800 1.0 600 Eoff 0.8 400 Eon 0.6 200 0.4 -75 DS12773 - Rev 2 -25 25 75 125 175 TJ (°C) 0 25 VDD = 520 V, VGS = -5 to 18 V, RG = 10 Ω, ID = 50 A 75 125 TJ (°C) page 5/14 SCTH100N65G2-7AG Electrical characteristics (curves) Figure 13. Switching energy vs gate resistance E (μJ) 1600 GADG041020180951SLG Etot VDD = 520 V, VGS = -5 to 18 V, ID = 50 A Figure 14. Normalized on-resistance vs temperature RDS(on) (norm.) 1.8 GADG261120180956RON VGS = 18 V 1.6 1200 1.4 Eon 1.2 800 Eoff 1.0 400 0 4 0.8 8 12 16 20 RG (Ω) Figure 15. Body diode characteristics (TJ = 25 °C) ID (A) -40 GADG260920181209DVF_25 VGS = -10 V DS12773 - Rev 2 25 75 125 175 TJ (°C) ID (A) GADG260920181210DVF_175 VGS = -10 V -80 VGS = 0 V -120 VGS = 10 V -160 -200 -8 -25 Figure 16. Body diode characteristics (TJ = 175 °C) -40 -80 -120 0.6 -75 -6 -4 -2 VGS = 0 V VGS = 10 V -160 VDS (V) -200 -8 -6 -4 -2 VDS (V) page 6/14 SCTH100N65G2-7AG Test circuits 3 Test circuits Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 20. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS12773 - Rev 2 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/14 SCTH100N65G2-7AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 H²PAK-7 package information Figure 23. H²PAK-7 package outline DM00249216_4 DS12773 - Rev 2 page 8/14 SCTH100N65G2-7AG H²PAK-7 package information Table 7. H²PAK-7 package mechanical data Dim. mm Min. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.60 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 M 1.90 2.50 R 0.20 0.60 V 0° 8° Figure 24. H²PAK-7 recommended footprint footprint_DM00249216_4 Note: DS12773 - Rev 2 Dimensions are in mm. page 9/14 SCTH100N65G2-7AG Packing information 4.2 Packing information Figure 25. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 26. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A Tape slot In core for Full radius DS12773 - Rev 2 Tape start G measured At hub page 10/14 SCTH100N65G2-7AG Packing information Table 8. Tape and reel mechanical data Tape Dim. DS12773 - Rev 2 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 11/14 SCTH100N65G2-7AG Revision history Table 9. Document revision history Date Revision 27-Nov-2018 1 Changes First release. Updated Features, Applications and Description. 18-Aug-2021 2 Updated Table 3. On/off states and Table 6. Reverse SiC diode characteristics. Minor text changes. DS12773 - Rev 2 page 12/14 SCTH100N65G2-7AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12773 - Rev 2 page 13/14 SCTH100N65G2-7AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12773 - Rev 2 page 14/14