SCTH35N65G2V-7

SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package Features TAB 7 1 H 2PAK-7 • • • Order code VDS RDS(on) max. ID SCTH35N65G2V-7 650 V 67 mΩ 45 A Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency Applications Drain (TAB) Gate (1) • • • Switching mode power supply DC-DC converters Industrial motor control Description Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH35N65G2V-7 Product summary Order code SCTH35N65G2V-7 Marking SCT35N65 Package H²PAK-7 Packing Tape and reel DS12047 - Rev 5 - December 2020 For further information contact your local STMicroelectronics sales office. www.st.com SCTH35N65G2V-7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating range) -5 to 18 V Drain current (continuous) at TC = 25 °C 45 Drain current (continuous) at TC = 100 °C 35 IDM(1) Drain current (pulsed) 90 A PTOT Total power dissipation at TC = 25 °C 208 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 175 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS12047 - Rev 5 Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.72 °C/W RthJA Thermal resistance, junction-to-ambient 62.5 °C/W page 2/15 SCTH35N65G2V-7 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) Static drain-source on-resistance Min. Typ. Max. 650 Unit V 5 µA ±100 nA 3.2 5 V VGS = 20 V, ID = 20 A 45 67 VGS = 18 V, ID = 20 A 55 VGS = 20 V, ID = 20 A, TJ = 175 °C 65 1.8 mΩ Table 4. Dynamic, based on HiP247 package option Symbol Parameter Test conditions Min. Typ. Max. Unit - 1370 - pF - 125 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 30 - pF Qg Total gate charge - 73 - nC Qgs Gate-source charge - 14 - nC Qgd Gate-drain charge - 27 - nC Rg Gate input resistance - 2 - Ω VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 400 V, VGS = 0 to 20 V, ID = 20 A f = 1 MHz, ID = 0 A Table 5. Switching energy (inductive load), based on HiP247 package option Symbol Parameter Test conditions Min. Typ. Max. Unit Eon Turn-on switching energy VDD = 400 V, ID = 20 A - 100 - µJ Eoff Turn-off switching energy RG = 10 Ω, VGS = -5 to 20 V - 35 - µJ Min. Typ. Max. Unit - 16 - Table 6. Switching times, based on HiP247 package option Symbol td(on) tf td(off) tr DS12047 - Rev 5 Parameter Test conditions Turn-on delay time Fall time VDD = 400 V, ID = 20 A, - 14 - Turn-off delay time RG = 4.7 Ω, VGS = -5 to 20 V - 35 - - 9 - Rise time ns page 3/15 SCTH35N65G2V-7 Electrical characteristics Table 7. Reverse SiC diode characteristics Symbol DS12047 - Rev 5 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 20 A, VGS = 0 V VDD = 400 V, IF = 20 A, di/dt = 1000 A/μs Min. Typ. Max. Unit - 3.3 - V - 18 - ns - 85 - nC - 7 - A page 4/15 SCTH35N65G2V-7 Electrical characteristics (curves), based on HiP247 package option 2.1 Electrical characteristics (curves), based on HiP247 package option Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) K GADG140220171448SOA GADG140220171449ZTH Operation in this area is limited by RDS(on) 10 1 tp =100 µs single pulse 10 -1 tp =1 ms TC = 25 °C, TJ ≤ 175 °C, single pulse 10 0 10 -1 10 -1 10 0 tp =10 ms 10 1 VDS (V) 10 2 Figure 3. Output characteristics (TJ= 25 °C) ID (A) SIC140220171450OC25 VGS = 20 V 80 VGS = 14 V VGS = 16 V 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 4. Output characteristics (TJ= 175 °C) ID (A) SIC140220171450OC175 VGS = 20 V VGS = 16 V VGS = 14 V 80 VGS = 12 V VGS = 12 V 60 60 40 VGS = 10 V 40 VGS = 8 V VGS = 10 V 20 20 VGS = 8 V 0 0 VGS = 6 V 2 4 6 8 10 12 VDS (V) VGS = 6 V 0 0 Figure 5. Transfer characteristics ID (A) GADG140220171450TCH VDS = 10 V 80 2 4 6 8 10 12 VDS (V) Figure 6. Total power dissipation PTOT (W) SIC140220171451PDT 200 TJ ≤ 175 °C 160 60 40 120 TJ = 175 °C TJ = 25 °C 80 20 0 0 DS12047 - Rev 5 40 4 8 12 16 VGS (V) 0 0 50 100 150 TC (°C) page 5/15 SCTH35N65G2V-7 Electrical characteristics (curves), based on HiP247 package option Figure 7. Gate charge vs gate-source voltage VGS (V) Figure 8. Capacitance variations C (pF) GADG140220171452QVG GADG140220171452CVR 20 16 12 CISS 10 3 VDD = 400 V ID = 20 A 10 2 8 COSS f = 1 MHz 4 0 0 CRSS 10 20 30 40 50 60 70 Qg (nC) Figure 9. Switching energy vs. drain current E (μJ) SIC140220171454SLC Etot VDD = 400 V, RG = 4.7 Ω, VGS = -5 to 20 V 1000 10 1 10 -1 10 0 10 1 10 2 VDS (V) Figure 10. Switching energy vs. junction temperature E (μJ) SIC140220171455SLT 140 Etot 120 800 100 Eon Eon 600 80 Eoff 400 60 VDD = 400 V, RG = 4.7 Ω, ID = 20 A, VGS = -5 to 20 V 40 200 Eoff 20 0 0 20 40 60 ID (A) Figure 11. Normalized V(BR)DSS vs. temperature V(BR)DSS (norm.) GADG140220171455BDV 1.06 ID = 1 mA 0 0 50 100 150 TJ (°C) Figure 12. Normalized gate threshold voltage vs. temperature VGS(th) (norm.) GADG140220171458VTH 1.4 ID = 1 mA 1.04 1.2 1.02 1.0 1.00 0.98 0.8 0.96 0.6 0.94 -75 DS12047 - Rev 5 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/15 SCTH35N65G2V-7 Electrical characteristics (curves), based on HiP247 package option Figure 14. Reverse conduction characteristics (TJ= 25 °C) Figure 13. Normalized on-resistance vs. temperature RDS(on) (norm.) ID (A) GADG140220171458RON VGS = 20 V 2.0 -20 1.5 -40 1.0 -60 0.5 -80 0.0 -75 -25 25 75 125 175 SIC140220171501RRT25 VGS = -5 V VGS = -2 V VGS = 0 V VGS = 10 V VGS = 5 V -100 -7 TJ (°C) -6 -5 -4 -3 -2 -1 VDS (V) Figure 15. Reverse conduction characteristics (TJ= 175 °C) ID (A) -20 SIC140220171502RRT175 VGS = -5 V VGS = -2 V VGS = 0 V -40 VGS = 10 V VGS = 5 V -60 -80 -100 -7 DS12047 - Rev 5 -6 -5 -4 -3 -2 -1 VDS (V) page 7/15 SCTH35N65G2V-7 Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 19. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 21. Switching time waveform Figure 20. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS12047 - Rev 5 page 8/15 SCTH35N65G2V-7 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 H²PAK-7 package information Figure 22. H²PAK-7 package outline DM00249216_4 DS12047 - Rev 5 page 9/15 SCTH35N65G2V-7 H²PAK-7 package information Table 8. H²PAK-7 package mechanical data Dim. mm Min. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.60 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 M 1.90 2.50 R 0.20 0.60 V 0° 8° Figure 23. H²PAK-7 recommended footprint footprint_DM00249216_4 Note: DS12047 - Rev 5 Dimensions are in mm. page 10/15 SCTH35N65G2V-7 Packing information 4.2 Packing information Figure 24. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 25. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A Tape slot In core for Full radius DS12047 - Rev 5 Tape start G measured At hub page 11/15 SCTH35N65G2V-7 Packing information Table 9. Tape and reel mechanical data Tape Dim. DS12047 - Rev 5 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 12/15 SCTH35N65G2V-7 Revision history Table 10. Document revision history Date Revision 27-Feb-2017 1 Changes First release. Modified title. 12-Dec-2017 2 Modified Table 4: "On/off states". Minor text changes. DS12047 - Rev 5 03-Oct-2019 3 09-Jan-2020 4 17-Dec-2020 5 Updated title, Features and Description in cover page. Minor text changes. Updated Table 1. Absolute maximum ratings. Minor text changes. Updated Table 7. Reverse SiC diode characteristics. Minor text changes. page 13/15 SCTH35N65G2V-7 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves), based on HiP247 package option . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS12047 - Rev 5 page 14/15 SCTH35N65G2V-7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12047 - Rev 5 page 15/15