SS5817D THRU SS5819D
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 40 V
Forward Current - 1 A
Features
• Plastic package has Underwriters Laboratory
Classification 94V-0
• Metal silicon junction, majority carrier conduction
• For surface mount applications
• Guard ring for overvoltage protection
• Low power loss, high efficiency
• High current capability, Low forward voltage drop
• High surge capability
H
C
Mechanical Data
• Case: SMA (DO-214AC) molded plastic case
• Terminals: Solder plate, solderable per
MIL-STD -750, method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
E
T
M
E
S
Maximum Ratings and Electrical Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, for
capacitive load, derate by 20 %
Parameter
Symbols SS5817D SS5818D SS5819D
Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
30
40
V
Maximum RMS Voltage
VRMS
14
21
28
V
Maximum DC Blocking Voltage
VDC
20
30
40
V
Maximum Average Forward Rectified Current 0.375" (9.5 mm)
Load Length at TL = 90 OC
IF(AV)
1
A
Peak Forward Surge Current 8.3 mS Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method) at TL = 70 OC
IFSM
25
A
Maximum Instantaneous Forward Voltage at 1 A
Maximum Instantaneous Reverse Current
at Rated DC Blocking Voltage
VF
O
at Ta = 25 C
at Ta =100 OC
Typical Junction Capacitance 1)
Typical Thermal Resistance
2)
Operating and Storage Temperature Range
1)
2)
0.45
0.55
IR
0.5
10
Cj
110
RθJA
88
Tj, Tstg
- 65 to + 125
0.6
V
mA
pF
O
C/W
O
C
Measured at 1 MHz and reverse voltage of 4 V.
Thermal Resistance (from Junction to Ambient) Vertical P.C.B Mounted, with 1.5 X 1.5" (38 X 38 mm) copper pads.
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:27/02/2012 J Rev:01
SS5817D THRU SS5819D
H
C
E
T
M
E
S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:27/02/2012 J Rev:01
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