STB11NM60T4

STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages Features TAB TAB Order codes STB11NM60T4 3 1 D2PAK TO-220 1 2 3 STP11NM60 • • • VDSS (@ TJmax) 650 V RDS(on) max. ID 0.45 Ω 11 A Package D²PAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications • Switching applications G(1) Description S(3) AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB11NM60T4 STP11NM60 Product summary Order code STB11NM60T4 Marking B11NM60 Package D²PAK Packing Tape and reel Order code STP11NM60 Marking P11NM60 Package TO-220 Packing Tube DS3653 - Rev 7 - October 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB11NM60T4, STP11NM60 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Gate-source voltage 600 V VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 11 ID Drain current (continuous) at TC= 100 °C 7 IDM (1) Drain current (pulsed) 44 A PTOT Total dissipation at TC = 25 °C 160 W Peak diode recovery voltage slope 15 V/ns -65 to 150 °C dv/dt (2) Tstg Tj Storage temperature range Operating junction temperature range A 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb(1) Thermal resistance junction-pcb Value D2PAK TO-220 Unit 0.78 62.5 °C/W 35 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol DS3653 - Rev 7 Parameter Value Unit IAR Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax) 5.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ page 2/21 STB11NM60T4, STP11NM60 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 μA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 10 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5.5 A 0.4 0.45 Ω Min. Typ. Max. Unit - 1000 - pF - 230 - pF - 25 - pF 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VDS = 0 V to 480 V, VGS = 0 V - 100 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.6 - Ω Qg Total gate charge VDD = 480 V, ID = 11 A, - 30 - nC Qgs Gate-source charge VGS = 0 to 10 V - 10 - nC Qgd Gate-drain charge (see Figure 12. Test circuit for gate charge behavior) - 15 - nC VDS= 25 V, f = 1 MHz, VGS = 0 V 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) Parameter Turn-on delay time Test conditions VDD = 300 V, ID = 5.5 A, Min. Typ. Max. Unit - 20 - ns - 20 - ns RG = 4.7 Ω, VGS = 10 V tr tr(Voff) DS3653 - Rev 7 Rise time (see Figure 11. Test circuit for resistive load switching times and Figure 16. Switching time waveform) Off-voltage rise time VDD = 480 V, ID = 11 A, - 6 - ns tf Fall time - 11 - ns tc Cross-over time RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for inductive load switching and diode recovery times and Figure 16. Switching time waveform) - 19 - ns page 3/21 STB11NM60T4, STP11NM60 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM(1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 11 A Source-drain current (pulsed) - 44 A 1.5 V Forward on voltage VGS = 0 V, ISD = 11 A - trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 390 ns Qrr Reverse recovery charge VDD = 100 V - 3.8 μC Reverse recovery current (see Figure 13. Test circuit for inductive load switching and diode recovery times) - 19.5 A trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 570 ns Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 5.7 μC IRRM Reverse recovery current (see Figure 13. Test circuit for inductive load switching and diode recovery times) - 20 A VSD IRRM 1. Pulse width is limited by safe operating area 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5% DS3653 - Rev 7 page 4/21 STB11NM60T4, STP11NM60 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Normalized gate threshold voltage vs temperature DS3653 - Rev 7 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on-resistance page 5/21 STB11NM60T4, STP11NM60 Electrical characteristics (curves) Figure 7. Normalized on-resistance vs temperature Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Source-drain diode forward characteristics DS3653 - Rev 7 page 6/21 STB11NM60T4, STP11NM60 Test circuits 3 Test circuits Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 13. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 14. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 16. Switching time waveform Figure 15. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS3653 - Rev 7 page 7/21 STB11NM60T4, STP11NM60 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS3653 - Rev 7 page 8/21 STB11NM60T4, STP11NM60 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 17. D²PAK (TO-263) type A package outline 0079457_25 DS3653 - Rev 7 page 9/21 STB11NM60T4, STP11NM60 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS3653 - Rev 7 Typ. 0.40 0° 8° page 10/21 STB11NM60T4, STP11NM60 D²PAK packing information 4.2 D²PAK packing information Figure 18. D²PAK tape outline DS3653 - Rev 7 page 11/21 STB11NM60T4, STP11NM60 D²PAK packing information Figure 19. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS3653 - Rev 7 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 12/21 STB11NM60T4, STP11NM60 D²PAK (TO-263) type B package information 4.3 D²PAK (TO-263) type B package information Figure 20. D²PAK (TO-263) type B package outline 0079457_25_B DS3653 - Rev 7 page 13/21 STB11NM60T4, STP11NM60 D²PAK (TO-263) type B package information Table 10. D²PAK (TO-263) type B mechanical data Dim. mm Min. Max. A 4.36 4.56 A1 0 0.25 b 0.70 0.90 b1 0.51 0.89 b2 1.17 1.37 b3 1.36 1.46 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.34 D 8.60 9.00 D1 6.90 7.50 E 10.15 10.55 E1 8.10 8.70 e 2.54 BSC H 15.00 15.60 L 1.90 2.50 L1 1.65 L2 1.78 L3 L4 DS3653 - Rev 7 Typ. 0.25 4.78 5.28 page 14/21 STB11NM60T4, STP11NM60 D²PAK type B packing information Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint 4.4 D²PAK type B packing information Figure 22. D²PAK type B tape outline DS3653 - Rev 7 page 15/21 STB11NM60T4, STP11NM60 D²PAK type B packing information Figure 23. D²PAK type B reel outline T 40mm min. access hole at slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 2.5mm min.width AM06038v1 Table 11. D²PAK type B reel mechanical data Dim. mm Min. A DS3653 - Rev 7 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T Max. 13.2 26.4 30.4 page 16/21 STB11NM60T4, STP11NM60 TO-220 type A package information 4.5 TO-220 type A package information Figure 24. TO-220 type A package outline 0015988_typeA_Rev_21 DS3653 - Rev 7 page 17/21 STB11NM60T4, STP11NM60 TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS3653 - Rev 7 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 18/21 STB11NM60T4, STP11NM60 Revision history Table 13. Document revision history Date Version Changes 09-Sep-2004 1 First release 10-Jun-2005 2 Typing error, wrong description 26-Jul-2006 3 The document has been reformatted, no content change 31-Aug-2006 4 Typo mistake on order code 21-Dec-2006 5 Various changes on “Test conditions” for Table 5. and Table 6. 12-Jan-2007 6 Order code has been corrected The part numbers STB11NM60-1 and STP11NM60FP have been moved to a separate datasheet and the document has been updated accordingly. 01-Oct-2018 7 Modified Table 1. Absolute maximum ratings, Table 2. Thermal data and Table 5. Dynamic. Modified Section 2.1 Electrical characteristics (curves). Updated Section 4 Package information. Minor text changes. DS3653 - Rev 7 page 19/21 STB11NM60T4, STP11NM60 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 D²PAK (TO-263) type B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.4 D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 DS3653 - Rev 7 page 20/21 STB11NM60T4, STP11NM60 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS3653 - Rev 7 page 21/21