STB120N4F6

STB120N4F6, STD120N4F6 Automotive-grade N-channel 40 V, 3.5 mΩ typ., 80 A STripFET™ F6 Power MOSFETs in DPAK and D²PAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max. ID STB120N4F6 40 V 4 mΩ 80 A STD120N4F6 40 V 4 mΩ 80 A TAB 3 1 1 DPAK • Designed for automotive applications and AEC-Q101 qualified 3 • Very low on-resistance D²PAK • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram '7$%RU Application • Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order codes Marking STB120N4F6 Package D²PAK 120N4F6 STD120N4F6 September 2015 This is information on a product in full production. Packaging Tape and reel DPAK DocID17042 Rev 6 1/19 www.st.com Contents STB120N4F6, STD120N4F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits .............................................. 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 D2PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . 12 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID17042 Rev 6 STB120N4F6, STD120N4F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 110 W -55 to 175 °C ID (1) ID (1) IDM (2) PTOT Tstg Tj Storage temperature Operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area Table 3. Thermal resistance Value Symbol Parameter Unit DPAK Rthj-case Rthj-pcb Thermal resistance junction-case max Thermal resistance junction-pcb max (1) D²PAK 1.36 50 °C/W 35 °C/W 1. When mounted on 1 inch2 2 oz. Cu board. Table 4. Thermal resistance Symbol IAR(1) EAS (2) Parameter Value Unit Avalanche current, repetitive or not-repetitive 40 A Single pulse avalanche energy 394 mJ 1. Pulse width limited by Tj max 2. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V DocID17042 Rev 6 3/19 19 Electrical characteristics 2 STB120N4F6, STD120N4F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Static Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS = 20 V, Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A V(BR)DSS Min. Typ. Max. 40 Unit V 1 10 µA µA ±100 nA 4 V 3.5 4.0 mΩ Min Typ. Max. Unit - 3850 - pF - 650 - pF - 350 - pF - 65 - nC - 20 - nC - 16 - nC - 1.5 - Ω Min. Typ. Max. Unit - 20 - ns - 70 - ns - 40 - ns - 20 - ns 2 Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 20 V, ID = 80 A VGS = 10 V (see Figure 14) RG Intrinsic gate resistance f = 1 MHz open drain VDS = 25 V, f=1 MHz, VGS = 0 V Table 7. Switching on/off (inductive load) Symbol td(on) tr td(off) tf 4/19 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 20 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Fall time DocID17042 Rev 6 STB120N4F6, STD120N4F6 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit - 80 320 A A 1.1 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 40 A, VGS = 0 - trr Reverse recovery time - 40 ns Qrr Reverse recovery charge - 56 nC IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 30 V (see Figure 17) - 2.8 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID17042 Rev 6 5/19 19 Electrical characteristics 2.1 STB120N4F6, STD120N4F6 Electrical characteristics (curves) Figure 2. Safe operating area ID (A) 100 Figure 3. Thermal impedance AM08627v1 Tj=175°C is ea ar (on) s i DS th in ax R n tio y m a er d b Op ite Lim Tc=25°C Single pulse 100µs 1ms 10 10ms 1 0.1 0.1 10 1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM08628v1 ID (A) VGS=10V 350 AM08629v1 ID (A) VDS=2V 300 300 6V 250 200 200 150 150 100 5V 100 50 50 0 0 4V 1 2 4 3 5 6 7 8 Figure 6. Normalized B(BR)DSS vs temperature AM08630v1 V(BR)DSS (norm) 1.15 0 0 VDS(V) 1 2 3 4 5 VGS(V) Figure 7. Static drain-source on resistance RDS(on) (mΩ) ID = 250 μA AM08631v1 VGS=10V 4.5 1.10 4.0 1.05 1.00 3.5 0.95 3.0 0.90 2.5 0.85 0.80 -75 6/19 2.0 -25 25 75 125 175 TJ(°C) DocID17042 Rev 6 20 40 60 80 ID(A) STB120N4F6, STD120N4F6 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM08632v1 VGS (V) Figure 9. Capacitance variations AM08633v1 C (pF) VDD=20V ID=80A 10 Ciss 1000 8 Coss 6 Crss f = 1 MHz 100 4 2 0 0 10 20 30 40 50 60 70 10 Figure 10. Normalized gate threshold voltage vs temperature AM08634v1 VGS(th) 0.1 Qg(nC) (norm) 1 VDS(V) 10 Figure 11. Normalized on resistance vs temperature AM08635v1 RDS(on) (norm) 1.2 VGS=10V ID=40A 2.0 1.0 1.5 0.8 ID = 250 μA 1.0 0.6 0.5 0.4 0.2 -75 25 -25 75 125 175 TJ(°C) 0 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM08636v1 VSD (V) TJ=-55°C 1.0 0.9 0.8 TJ=25°C 0.7 TJ=175°C 0.6 0.5 0.4 10 20 30 40 50 60 70 80 ISD(A) DocID17042 Rev 6 7/19 19 Test circuits 3 STB120N4F6, STD120N4F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V μF RG IG=CONST VDD Vi=20V=VGMAX 2200 mF VD VGS 1kΩ 100nF 3.3 μF 2200 RL 47kΩ D.U.T. 100Ω D.U.T. 2.7kΩ PW VG 47kΩ 1kΩ PW AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A Figure 16. Unclamped Inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/19 0 DocID17042 Rev 6 10% AM01473v1 STB120N4F6, STD120N4F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D2PAK (TO-263) type A package information Figure 19. D²PAK (TO-263) type A package outline DocID17042 Rev 6 9/19 19 Package information STB120N4F6, STD120N4F6 Table 9. D²PAK (TO-263) type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/19 Max. 0.4 0° 8° DocID17042 Rev 6 STB120N4F6, STD120N4F6 Package information Figure 20. D²PAK recommended footprint(a) )RRWSULQW a. All dimension are in millimeters DocID17042 Rev 6 11/19 19 Package information 4.2 STB120N4F6, STD120N4F6 DPAK (TO-252) type A2 package information Figure 21. DPAK (TO-252) type A2 package outline BW\SH$BUHY 12/19 DocID17042 Rev 6 STB120N4F6, STD120N4F6 Package information Table 10. DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 6.60 1.00 R V2 5.25 0.20 0° 8° DocID17042 Rev 6 13/19 19 Package information STB120N4F6, STD120N4F6 Figure 22. DPAK (TO-252) recommended footprint (b) )3BB5 b. All dimensions are in millimeters 14/19 DocID17042 Rev 6 STB120N4F6, STD120N4F6 5 Packaging mechanical data Packaging mechanical data Figure 23. Tape for DPAK (TO-252) and D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DocID17042 Rev 6 15/19 19 Packaging mechanical data STB120N4F6, STD120N4F6 Figure 24. Reel for DPAK (TO-252) and D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 16/19 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID17042 Rev 6 Min. Max. 330 13.2 26.4 30.4 STB120N4F6, STD120N4F6 Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID17042 Rev 6 18.4 22.4 17/19 19 Revision history 6 STB120N4F6, STD120N4F6 Revision history Table 13. Document revision history 18/19 Date Revision Changes 09-Feb-2010 1 First release 29-Oct-2010 2 Document status promoted from preliminary data to datasheet. 11-Nov-2010 3 Corrected RDS(on) value in Table 5: Static. 13-May-2011 4 Removed package and mechanical data: TO-220 17-May-2011 5 Description in cover page has been updated. 23-Sep-2015 6 Updated title, features and description in cover page. Updated Section 4: Package information. DocID17042 Rev 6 STB120N4F6, STD120N4F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID17042 Rev 6 19/19 19