STB30NF20L

STB30NF20L Automotive-grade N-channel 200 V, 0.066 Ω typ., 30 A, STripFET™ Power MOSFET in D²PAK package Datasheet - production data Features TAB 2 VDS RDS(on) max. ID STB30NF20L 200 V 0.075 Ω 30 A      3 1 D²PAK PTOT Order code 150 W AEC-Q101 qualified Gate charge minimized 100% avalanche tested Excellent FoM (figure of merit) Very low intrinsic capacitance Applications Figure 1: Internal schematic diagram  Switching applications Description D(2, TAB) This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. G(1) S(3) AM01475v1_noZen Table 1: Device summary Order code Marking Package Packaging STB30NF20L 30NF20L D²PAK Tape and reel March 2017 DocID022753 Rev 3 This is information on a product in full production. 1/15 www.st.com Contents STB30NF20L Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 D²PAK package information .............................................................. 9 4.2 D²PAK packing information ............................................................. 12 Revision history ............................................................................ 14 DocID022753 Rev 3 STB30NF20L 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 200 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC = 100 °C 19 A IDM(1) Drain current (pulsed) 120 A PTOT Total dissipation at TC = 25 °C 150 W Peak diode recovery voltage slope 10 V/ns - 55 to 175 °C Value Unit dv/dt(2) Tstg Tj Storage temperature range Operating junction temperature range Notes: (1)Pulse (2)I SD width is limited by safe operating area. ≤ 30 A, di/dt ≤ 200 A/µs, VDD= 80% V(BR)DSS Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient 1 °C/W 62.5 °C/W Value Unit Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax.) 30 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 140 mJ DocID022753 Rev 3 3/15 Electrical characteristics 2 STB30NF20L Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 V Min. Typ. Max. 200 Unit V VGS= 0 V, VDS = 200 V 1 µA VGS= 0 V, VDS = 200 V, TC= 125 °C (1) 10 µA Gate source leakage current VDS= 0 V, VGS = ±20 V ±100 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 3 V RDS(on) Static drain-source on-resistance VGS = 5 V, ID = 15 A 0.066 0.075 Ω Min. Typ. Max. Unit - 1990 - pF - 297 - pF - 42 - pF - 65 - nC - 7 - nC - 21 - nC IDSS IGSS Zero gate voltage drain current 1 Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol 4/15 Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS= 0 V VDD = 160 V, ID = 30 A, VGS = 0 to 10 V (see Figure 14: "Test circuit for gate charge behavior") DocID022753 Rev 3 STB30NF20L Electrical characteristics Table 7: Switching times Symbol td(on) Parameter Turn-on delay time tr Rise time td(off) Turn-off delay time Fall time tf Test conditions Min. Typ. Max. Unit VDD = 100 V, ID= 15 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 14 - ns - 12 - ns - 68 - ns - 14 - ns Min. Typ. Max. Unit - 30 A - 120 A 1.5 V Table 8: Source-drain diode Symbol ISD Parameter Test conditions Source-drain current ISDM(1) Source-drain current (pulsed) VSD = 1.5 V VSD(2) Forward on voltage ISD= 30 A, VGS = 0 V - trr Reverse recovery time - 140 ns Qrr Reverse recovery charge - 0.75 µC IRRM Reverse recovery current ISD = 30 A, di/dt = 100 A/µs VDD = 100 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 13 A ISD = 30 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 170 ns - 1.1 µC - 14 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width is limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022753 Rev 3 5/15 Electrical characteristics 2.1 STB30NF20L Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized VBR(DSS) vs temperature Figure 7: Static drain-source on-resistance W 6/15 DocID022753 Rev 3 STB30NF20L Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs temperature Figure 11: Normalized on-resistance vs temperature Figure 12: Source-drain diode forward characteristics DocID022753 Rev 3 7/15 Test circuits 3 8/15 STB30NF20L Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID022753 Rev 3 STB30NF20L 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK package information Figure 19: D²PAK (TO-263) type A package outline DocID022753 Rev 3 9/15 Package information STB30NF20L Table 9: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Typ. 0.40 0° DocID022753 Rev 3 8° STB30NF20L Package information Figure 20: D²PAK (TO-263) type A recommended footprint (dimensions are in mm) DocID022753 Rev 3 11/15 Package information 4.2 STB30NF20L D²PAK packing information Figure 21: D2PAK type A tape outline 12/15 DocID022753 Rev 3 STB30NF20L Package information Figure 22: D2PAK type A reel outline Table 10: D²PAK type A tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID022753 Rev 3 Min. Max. 330 13.2 26.4 30.4 13/15 Revision history 5 STB30NF20L Revision history Table 11: Document revision history Date Revision 01-Feb-2012 1 First release 07-Mar-2012 2 PTOT in cover page and in Table 2 has been updated. Figure 2, Figure 6, Figure 10 and Figure 11 have been updated. 3 Updated title and features on cover page. Updated Table 2: "Absolute maximum ratings", Table 5: "On/off states" and Figure 3: "Thermal impedance". Minor text changes 02-Mar-2017 14/15 Changes DocID022753 Rev 3 STB30NF20L IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID022753 Rev 3 15/15