STB46NF30

STB46NF30, STP46NF30, STW46NF30 N-channel 300 V, 0.063 Ω typ., 42 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order code PW VDSS RDS(on) max. ID 300 V < 0.075 Ω 42 A STB46NF30 STP46NF30 D2PAK TAB 300 W STW46NF30 TO-220 1 2 3 3 2 TO-247    Exceptional dv/dt capability 100% avalanche tested Low gate charge 1 Applications Figure 1: Internal schematic diagram  Switching applications Description D(2, TAB) These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. G(1) S(3) AM01475v1_Tab Table 1: Device summary Order code Marking STB46NF30 STP46NF30 46NF30 STW46NF30 August 2016 Package Packing D²PAK Tape and reel TO-220 TO-247 DocID018493 Rev 2 This is information on a product in full production. Tube 1/20 www.st.com Contents STB46NF30, STP46NF30, STW46NF30 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/20 4.1 D²PAK (TO-263) package information ............................................ 10 4.2 D²PAK (TO-263) packing information .............................................. 13 4.3 TO-220 type A package information................................................ 15 4.4 TO-247 package information ........................................................... 17 Revision history ............................................................................ 19 DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 300 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 42 A ID Drain current (continuous) at TC = 100 °C 27 A IDM(1) Drain current (pulsed) 168 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 10 V/ns - 55 to 175 °C (2) dv/dt TJ Operating junction temperature range Tstg Storage temperature range Notes: (1)Pulse (2)I SD width limited by safe operating area. ≤ 34 A, di/dt ≤ 200 A/μs, VDD = 80% V(BR)DSS,VDS peak < V(BR)DSS Table 3: Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient max 30 Thermal resistance junction-pcb 30 Rthj-pcb (1) TJ TO-220 TO-247 0.5 Maximum lead temperature for soldering purpose 62.5 °C/W 50 °C/W °C/W 300 °C Notes: (1)When mounted on FR-4 board of 1inch², 2oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 26 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 290 mJ Notes: (1)Pulse width limited by Tjmax DocID018493 Rev 2 3/20 Electrical characteristics 2 STB46NF30, STP46NF30, STW46NF30 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter V(BR)DSS Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = 1 mA 300 Typ. Max. Unit V VGS = 0 V, VDS = 300 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 300 V TC = 125 °C (1) 10 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 17 A 0.063 0.075 Ω Min. Typ. Max. Unit - 3200 - pF - 442 - pF - 57 - pF - 25 - ns - 38 - ns - 80 - ns - 46 - ns - 90 - nC - 16 - nC - 40 - nC 2 Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn-on delay time tr td(off) tf 4/20 Parameter Rise time Turn-off delay time Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 150 V, ID = 17 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Test circuit for resistive load switching times") VDD = 240 V, ID = 34 A VGS= 10 V (see Figure 17: "Test circuit for gate charge behavior") DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 34 A ISDM(1) Source-drain current (pulsed) - 136 A VSD(2) Forward on voltage ISD = 34 A, VGS = 0 V - 1.6 V trr Reverse recovery time - 215 ns Qrr Reverrse recovery charge - 1.7 µC IRRM Reverse recovery current ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 16 A ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 252 ns - 2.3 µC - 19 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID018493 Rev 2 5/20 Electrical characteristics 2.2 6/20 STB46NF30, STP46NF30, STW46NF30 Electrical characteristics (curves) Figure 2: Safe operating area for D²PAK and TO-220 Figure 3: Thermal impedance for D²PAK and TO-220 Figure 4: Safe operating area for TO-247 Figure 5: Thermal impedance for TO-247 Figure 6: Output characteristics Figure 7: Transfer characteristics DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance W Figure 10: Capacitance variations Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Normalized on-resistance vs temperature Figure 13: Normalized V(BR)DSS vs temperature DocID018493 Rev 2 7/20 Electrical characteristics STB46NF30, STP46NF30, STW46NF30 Figure 14: Avalanche energy vs starting Tj 8/20 Figure 15: Source-drain diode forward vs temperature DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 3 Test circuits Test circuits Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform DocID018493 Rev 2 9/20 Package information 4 STB46NF30, STP46NF30, STW46NF30 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK (TO-263) package information Figure 22: D²PAK (TO-263) type A package outline 0079457_A_rev22 10/20 DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 Package information Table 8: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° DocID018493 Rev 2 8° 11/20 Package information STB46NF30, STP46NF30, STW46NF30 Figure 23: D²PAK (TO-263) recommended footprint (dimensions are in mm) 12/20 DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 4.2 Package information D²PAK (TO-263) packing information Figure 24: Tape outline DocID018493 Rev 2 13/20 Package information STB46NF30, STP46NF30, STW46NF30 Figure 25: Reel outline Table 9: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. 14/20 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID018493 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB46NF30, STP46NF30, STW46NF30 4.3 Package information TO-220 type A package information Figure 26: TO-220 type A package outline DocID018493 Rev 2 15/20 Package information STB46NF30, STP46NF30, STW46NF30 Table 10: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 16/20 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID018493 Rev 2 STB46NF30, STP46NF30, STW46NF30 4.4 Package information TO-247 package information Figure 27: TO-247 package outline DocID018493 Rev 2 17/20 Package information STB46NF30, STP46NF30, STW46NF30 Table 11: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18/20 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID018493 Rev 2 3.65 5.50 5.50 5.70 STB46NF30, STP46NF30, STW46NF30 5 Revision history Revision history Table 12: Document revision history Date Revision Changes 28-Sep-2012 1 First release. 24-Aug-2016 2 Modified: Table 7: "Source-drain diode" Minor text changes DocID018493 Rev 2 19/20 STB46NF30, STP46NF30, STW46NF30 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 20/20 DocID018493 Rev 2