STB34NM60N

STB34NM60N, STP34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages Datasheet - production data Features Order codes TAB VDSS RDS(on) ID PTOT 600 V 0.105 Ω 31.5 A 250 W STB34NM60N TAB STP34NM60N 2 3 3 1 1 2 2 • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance D PAK TO-220 Applications • Switching applications Figure 1. Internal schematic diagram Description '7$% These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. * 6 $0Y Table 1. Device summary Order codes Marking Packages Packaging D2PAK Tape and reel TO-220 Tube STB34NM60N 34NM60N STP34NM60N March 2015 This is information on a product in full production. DocID17740 Rev 9 1/17 www.st.com 17 Contents STB34NM60N, STP34NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 DocID17740 Rev 9 STB34NM60N, STP34NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 31.5 A ID Drain current (continuous) at TC = 100 °C 20 A Drain current (pulsed) 126 A Total dissipation at TC = 25 °C 250 W 7 A IDM (1) PTOT IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 345 mJ Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns -55 to 150 °C 150 °C dv/dt (2) dv/dt (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 31.5 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb(1) Thermal resistance junction-pcb max Unit D2PAK TO-220 0.5 62.5 °C/W 30 1. When mounted on 1 inch² FR-4, 2 Oz copper board. DocID17740 Rev 9 3/17 Electrical characteristics 2 STB34NM60N, STP34NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, Tc=125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 14.5 A V(BR)DSS 600 2 V 3 Ω 0.092 0.105 Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 2722 - pF - 173 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1.75 - pF Equivalent capacitance time VGS = 0, VDS = 0 to 480 V related - 458 - pF Turn-on delay time - 18 - ns - 36 - ns - 104 - ns - 73 - ns Coss eq.(1) td(on) tr td(off) tf VDD = 300 V, ID = 15.75 A, RG=4.7 Ω, VGS=10 V (see Figure 19 and 14) Rise time Turn-off delay time Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG VDS =100 V, f=1 MHz, VGS=0 Intrinsic gate resistance VDD = 480 V, ID = 31.5 A VGS =10 V (see Figure 15) - 84 - nC - 14 - nC - 45 - nC f = 1 MHz, gate DC Bias=0 test signal level=20 mV open drain - 2.9 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 DocID17740 Rev 9 STB34NM60N, STP34NM60N Electrical characteristics Table 6. Source drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 31.5 A Source-drain current (pulsed) - 126 A 1.6 V Forward on voltage ISD= 31.5 A, VGS=0 - trr Reverse recovery time - 412 ns Qrr Reverse recovery charge - 8 µC IRRM Reverse recovery current ISD= 31.5 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 16) - 39 A ISD= 31.5 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 16) - 490 ns - 10 µC - 43 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DocID17740 Rev 9 5/17 Electrical characteristics 2.1 STB34NM60N, STP34NM60N Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15706v1 ID (A) Tj=150°C Tc=25°C Single pulse ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 100 10 10µs 100µs 1ms 10ms 1 0.1 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM09020v1 ID (A) AM09021v1 ID (A) VGS=10V 80 80 VDS=20V 70 70 60 60 6V 50 50 40 40 30 30 20 20 5V 10 0 0 5 10 15 20 30 25 10 Figure 6. Gate charge vs gate-source voltage AM15701v1 VDS (V) VGS (V) VDD=480V ID=31.5A 12 VDS 0 0 VDS(V) 2 4 8 6 VGS(V) Figure 7. Static drain-source on-resistance AM15702v1 RDS(on) (Ω) 500 0.096 400 0.094 300 0.092 200 0.09 100 0.088 0 Qg(nC) 0.086 VGS=10V 10 8 6 4 2 0 0 6/17 20 40 60 80 DocID17740 Rev 9 0 5 10 15 20 25 30 ID(A) STB34NM60N, STP34NM60N Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM09024v1 C (pF) AM09025v1 Eoss (µJ) 10000 Ciss 2 1000 Coss 100 1 10 1 0.1 Crss 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM09026v1 VGS(th) (norm) 0 0 VDS(V) 200 100 300 400 500 VDS(V) Figure 11. Normalized on-resistance vs temperature AM15703v1 RDS(on) (norm) ID=250µA ID=14.5A 2.1 1.10 1.9 1.7 1.00 1.5 0.90 1.3 1.1 0.80 0.9 0.70 0.60 -50 -25 0.7 0 25 50 75 100 TJ(°C) Figure 12. Normalized BVDSS vs temperature AM15704v1 VDS 0.5 -50 -25 1.07 1.05 1.2 1.03 1 1.01 0.8 0.99 0.6 0.97 0.4 0.95 0.2 ID=1mA 25 TJ(°C) 75 100 50 Figure 13. Source-drain diode forward characteristics VSD (V) 1.4 (norm) 0 AM15705v1 TJ=-50°C 0.93 -50 -25 0 0 25 50 75 100 TJ(°C) DocID17740 Rev 9 TJ=25°C TJ=150°C 0 5 10 15 20 25 30 ISD(A) 7/17 Test circuits 3 STB34NM60N, STP34NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/17 0 DocID17740 Rev 9 10% AM01473v1 STB34NM60N, STP34NM60N 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK package information Figure 20. D²PAK (TO-263) outline B9 DocID17740 Rev 9 9/17 Package information STB34NM60N, STP34NM60N Table 7. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/17 Max. 0.4 0° 8° DocID17740 Rev 9 STB34NM60N, STP34NM60N Package information Figure 21. D²PAK footprint(a) )RRWSULQW a. All dimension are in millimeters DocID17740 Rev 9 11/17 Package information 4.2 STB34NM60N, STP34NM60N TO-220 package information Figure 22. TO-220 type A outline BW\SH$B5HYB7 12/17 DocID17740 Rev 9 STB34NM60N, STP34NM60N Package information Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID17740 Rev 9 13/17 Packing information 5 STB34NM60N, STP34NM60N Packing information Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 14/17 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID17740 Rev 9 Min. Max. 330 13.2 26.4 30.4 STB34NM60N, STP34NM60N Packing information Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 24. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID17740 Rev 9 15/17 Revision history 6 STB34NM60N, STP34NM60N Revision history Table 10. Document revision history Date Revision 05-Aug-2010 1 Initial release. 02-Sep-2010 2 Updated title on cover page and Table 4: On/off states. 07-Apr-2011 3 Document status promoted from preliminary data to datasheet. 4 Inserted new device in D2PAK: Updated: Table 2: Absolute maximum ratings, Table 3: Thermal data and Section 4: Package information with the new device. Inserted Section 5: Packing information. Minor text changes. 12-Dec-2011 5 – Figure 9: Output capacitance stored energy has been updated. – Figure 10: Normalized gate threshold voltage vs temperature has been updated. – Figure 11: Normalized on-resistance vs temperature has been updated. – Figure 12: Normalized BVDSS vs temperature has been updated. 21-Dec-2011 6 Updated: Table 2: Absolute maximum ratings (VISO value for TO-220FP) 10-May-2012 7 Figure 6: Gate charge vs gate-source voltage has been updated. 8 – The part number STF34NM60N has been moved to a separate datasheet. – Added: MOSFET ruggedness parameter and 3 on Table 2 – Modified: ID value on Table 5 and typical values for td(on), tr, td(off) and tf, max values for ISD and ISDM, ISD for VSD, typical value and ISD for trr – Modified: Figure 6, 7, 12 and 13 – Minor text changes 9 – The part number STW34NM60N has been moved to a separate datasheet. – Updated Section 4: Package information. – Minor text changes. 10-Oct-2011 01-Jul-2013 20-Mar-2015 16/17 Changes DocID17740 Rev 9 STB34NM60N, STP34NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID17740 Rev 9 17/17