STB36N60M6

STB36N60M6 N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package Datasheet - production data Features x x x x x D2PAK Order code VDS RDS(on) max. ID STB36N60M6 600 V 99 mΩ 30 A Reduced switching losses Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications x Figure 1: Internal schematic diagram Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum endapplication efficiency. D ( 2 TAB ) G(1) S(3) Switching applications AM15572V1 Table 1: Device summary Order code Marking Package Packing STB36N60M6 36N60M6 D²PAK Tape and reel March 2017 DocID027339 Rev 4 This is information on a product in full production. 1/20 www.st.com Contents STB36N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/20 4.1 D2PAK type A package information .................................................. 9 4.2 D²PAK (TO-263) type B package information ................................. 12 4.3 D2PAK type A packing information ................................................. 15 4.4 D²PAK type B packing information .................................................. 17 Revision history ............................................................................ 19 DocID027339 Rev 4 STB36N60M6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC = 100 °C 19 A ID(1) Drain current (pulsed) 102 A PTOT W Total dissipation at TC = 25 °C 208 dv/dt(2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 50 TJ Operating junction temperature range Tstg Storage temperature range V/ns -55 to 150 °C Notes: (1) Pulse width limited by safe operating area. (2)I SD (3)V ≤ 30 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V DS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Rthj-case Thermal resistance junction-case 0.6 Rthj-pcb Thermal resistance junction-pcb(1) 30 Unit °C/W Notes: (1)When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax.) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) DocID027339 Rev 4 Value Unit 5 A 750 mJ 3/20 Electrical characteristics 2 STB36N60M6 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS= 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 μA VGS = 0 V, VDS = 600 V; TC = 125 °C (1) 100 μA IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 15 A 3.25 ±5 μA 4 4.75 V 85 99 mΩ Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 1960 - pF - 93 - pF - 6 - pF 332 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - RG Intrinsic gate resistance f = 1 MHz open drain - 1.6 - Ω Qg Total gate charge - 44.3 - nC Qgs Gate-source charge - 10.1 - nC Qgd Gate-drain charge VDD = 480 V, ID = 30 A, VGS = 0 to 10 V, (See Figure 15: "Test circuit for gate charge behavior") - 25 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/20 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V (See Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") DocID027339 Rev 4 Min. Typ. Max. Unit - 15.2 - ns - 5.3 - ns - 50.2 - ns - 7.3 - ns STB36N60M6 Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 30 A ISDM(1) Source-drain current (pulsed) - 102 A VSD(2) Forward on voltage ISD = 30 A, VGS = 0 V - 1.6 V ISD = 30 A, di/dt = 100 A/μs, VDD = 60 V, (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 340 ns - 5.3 μC - 31 A ISD = 30 A, di/dt = 100 A/μs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 430 ns - 7.7 μC - 36 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DocID027339 Rev 4 5/20 Electrical characteristics 2.1 STB36N60M6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized VBR(DSS)vs temperature Figure 7: Static drain-source on-resistance 6/20 DocID027339 Rev 4 STB36N60M6 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs temperature Figure 11: Normalized on-resistance vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Output capacitance stored energy DocID027339 Rev 4 7/20 Test circuits 3 STB36N60M6 Test circuits Figure 15: Test circuit for gate charge behavior Figure 14: Test circuit for resistive load switching times Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform 8/20 DocID027339 Rev 4 Figure 19: Switching time waveform STB36N60M6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK type A package information Figure 20: D²PAK (TO-263) type A package outline DocID027339 Rev 4 9/20 Package information STB36N60M6 Table 9: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 R V2 10/20 Typ. 1.75 0.40 0° DocID027339 Rev 4 8° STB36N60M6 Package information Figure 21: D²PAK (TO-263) type A recommended footprint (dimensions are in mm) DocID027339 Rev 4 11/20 Package information 4.2 STB36N60M6 D²PAK (TO-263) type B package information Figure 22: D²PAK (TO-263) type B package outline 0079457_23_B 12/20 DocID027339 Rev 4 STB36N60M6 Package information Table 10: D²PAK (TO-263) type B mechanical data mm Dim. Min. Typ. Max. A 4.36 4.56 A1 0 0.25 b 0.70 0.90 b1 0.51 0.89 b2 1.17 1.37 b3 1.36 1.46 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.34 D 8.60 9.00 D1 6.90 7.50 E 10.15 10.55 E1 8.10 8.70 e 2.54 BSC H 15.00 15.60 L 1.90 2.50 L1 1.65 L2 1.78 L3 L4 0.25 4.78 DocID027339 Rev 4 5.28 13/20 Package information STB36N60M6 Figure 23: D²PAK (TO-263) type B recommended footprint (dimensions are in mm) 14/20 DocID027339 Rev 4 STB36N60M6 4.3 Package information D2PAK type A packing information Figure 24: D2PAK type A tape outline DocID027339 Rev 4 15/20 Package information STB36N60M6 Figure 25: D2PAK type A reel outline Table 11: D²PAK type A tape and reel mechanical data Tape Reel mm mm Dim. 16/20 Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 Max. 330 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027339 Rev 4 STB36N60M6 4.4 Package information D²PAK type B packing information Figure 26: D2PAK type B tape outline Figure 27: D2PAK type B reel outline DocID027339 Rev 4 17/20 Package information STB36N60M6 Table 12: D²PAK type B reel mechanical data mm Dim. Min. A 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T 18/20 Max. 13.2 26.4 30.4 DocID027339 Rev 4 STB36N60M6 5 Revision history Revision history Table 13: Document revision history Date Revision 08-Jan-2015 1 Initial release. 07-Apr-2016 2 Updated Table 2: "Absolute maximum ratings", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode". 3 Updated title, the table of features in cover page, Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)". Added Section 4.2: "D²PAK (TO-263) type B package information" and Section 4.4: "D²PAK type B packing information". Minor text changes. 4 Updated document status from preliminary to production data. Updated Table 2: "Absolute maximum ratings", Table 6: "Dynamic" and Table 8: "Source-drain diode". Updated Figure 2: "Safe operating area", Figure 4: "Output characteristics", Figure 5: "Transfer characteristics" and Figure 9: "Capacitance variations". 06-Feb-2017 21-Mar-2017 Changes DocID027339 Rev 4 19/20 STB36N60M6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 20/20 DocID027339 Rev 4