STB9NK60ZDT4

STB9NK60ZD N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperFREDMESH™ Power MOSFET (with fast diode) in D²PAK Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT 0.95 Ω 7A 125 W STB9NK60ZDT4 600 V • Extremely high dv/dt capability 3 1 • Zener-protected D2PAK • 100% avalanche tested • Gate charge minimized Figure 1. Internal schematic diagram D(2, TAB) • Low intrinsic capacitances • Fast internal recovery diode Applications • Switching applications • Fast internal recovery diode G(1) Description S(3) AM16813v1 The device is developed using the revolutionary SuperFREDMesh™ technology. It associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. Table 1. Device summary Order code Marking Package Packaging STB9NK60ZDT4 B9NK60ZD D2PAK Tape and reel July 2013 This is information on a product in full production. DocID9573 Rev 9 1/14 www.st.com 14 Contents STB9NK60ZD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 DocID9573 Rev 9 STB9NK60ZD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 7 A ID Drain current (continuous) at TC = 100 °C 4.3 A Drain current (pulsed) 28 A Total dissipation at TC = 25 °C 125 W 1 W/°C 4000 V 15 V/ns - 55 to 150 °C IDM (1) PTOT VESD(G-S) dv/dt (2) Tj Tstg Derating factor Gate-source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Max. operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 7 A, di/dt ≤ 500 A/µs; VDD = 80% V(BR)DSS. Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 1 °C/W Rthj-pcb Thermal resistance junction-pcb max.(1) 30 °C/W Value Unit 7 A 235 mJ 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj=25 °C, ID= IAR; VDD= 50) DocID9573 Rev 9 3/14 Electrical characteristics 2 STB9NK60ZD Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC = 125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.5 4.5 V 0.85 0.95 Ω Min. Typ. Max. Unit - 5.3 S - 1110 pF - 135 pF - 30 pF - 72 pF - 41 - 8.7 nC - 21 nC VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance 2.5 VGS = 10 V, ID = 3.5 A Table 6. Dynamic Symbol Parameter gfs(1) Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(2) Equivalent output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 15 V, ID= 3.5 A VDS = 25 V, f = 1 MHz, VGS = 0 VDS = 0 to 480 V, VGS = 0 VDD = 480 V, ID = 11 A, VGS = 10 V (see Figure 15 ) 53 1. Pulsed: pulse duration= 300 μs, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/14 DocID9573 Rev 9 nC STB9NK60ZD Electrical characteristics Table 7. Switching times Symbol td(on) Parameter Test conditions td(off) tf Typ. Max. Unit - 11.4 - ns - 13.6 - ns - 23.1 - ns - 15 - ns - 11 - ns - 8 - ns - 20 - ns Turn-on delay time VDD = 300 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) Rise time tr Min. Turn-off delay time Fall time tr(Voff) Off-voltage rise time tf Fall time tc Cross-overtime VDD = 480 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) Table 8. Source - drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 7 A ISDM (1) Source-drain current (pulsed) - 28 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 7 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 30 V (see Figure 16) ISD = 7 A, di/dt = 100 A/µs VDD = 30 V, Tj = 150 °C (see Figure 16) - 130 ns - 550 nC - 8.4 A - 176 ns - 880 nC - 10 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration= 300 μs, duty cycle 1.5%. Table 9. Gate - source Zener diode Symbol BVGSO(1) Parameter Test conditions Gate-source breakdown voltage Igs= ± 1 mA (open drain) Min. 30 Typ. Max. Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID9573 Rev 9 5/14 Electrical characteristics 2.1 STB9NK60ZD Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance 6/14 DocID9573 Rev 9 STB9NK60ZD Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Maximum avalanche energy vs temperature DocID9573 Rev 9 7/14 Test circuits 3 STB9NK60ZD Test circuits Figure 14. Switching time test circuit for resistive load Figure 15. Gate charge test circuit VDD 12 V μF VDD VD VGS RG 1 kΩ 100nF 3.3 μF 2200 RL 47 kΩ IG=CONST Vi=20 V=VGMAX 2200 μF D.U.T. 100 Ω D.U.T. VG 2.7 kΩ PW 47 kΩ 1 kΩ PW AM16810v1 AM016809v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G S 25 Ω A A D.U.T. FAST DIODE B B Figure 17. Unclamped inductive load test circuit L A VD L=100μH B D 3.3 μF 1000 μF VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM16811v1 AM16812v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 DocID9573 Rev 9 10% AM01473v1 STB9NK60ZD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 10. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID9573 Rev 9 9/14 Package mechanical data STB9NK60ZD Figure 20. D²PAK (TO-263) drawing 0079457_T Figure 21. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters. 10/14 DocID9573 Rev 9 Footprint STB9NK60ZD 5 Packaging mechanical data Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID9573 Rev 9 Min. Max. 330 13.2 26.4 30.4 11/14 Packaging mechanical data STB9NK60ZD Figure 22. D²PAK (TO-263) tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 23. D²PAK (TO-263) reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 12/14 DocID9573 Rev 9 STB9NK60ZD 6 Revision history Revision history Table 12. Document revision history Date Revision 29-Sep-2003 6 Data updated. 13-Jun-2006 7 The doc. has been reformatted. 14-Apr-2008 8 Table 8 has been corrected. Package mechanical data updated. 9 -The part numbers: STF9NK60ZD and STP9NK60ZD have been moved to a separate datasheet. -Changed the title and Figure 1. -Added Zener-protected to the features. -Minor text changes. 11-Jul-2013 Changes DocID9573 Rev 9 13/14 STB9NK60ZD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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